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国際会議・招待講演リスト

最終更新日：2020年2月26日

2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009

- 2020 -

  1. Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, S. Takeda, R. Miyagawa, Y. Shimizu, and Y. Nagai: "Mechanism of direct bonding via surface activation to fabricate Si/GaAs heterointerfaces towards tandem solar cells" 2020 European Materials Research Society (E-MRS) Spring Meeting, Congress & Exhibition Centre, Strasbourg, France, May 25-29, 2020.

  2. Y. Nakamura, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, H. X. Wang, N. Shigekawa, and J. Liang: "Characterization of the diamond/GaAs direct bonding interfaces fabricated by surface activated bonding" 14th International Conference on New Diamond and Nano Carbons (NDNC2020) Kanazawa Bunka Hall, Kanazawa, Japan, May 31-June 4, 2020.
    https://www.ndnc2020.org/

  3. J. Liang, A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, and N. Shigekawa: "Characterization of GaN/diamond interface prepared by surface activated bonding for thermal management" Compound Semiconductor Week (CSW) 2020, Stockholm, Sweden, May 17-21, 2020.
    https://csw-2020.se/

  4. Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, R. Miyagawa, Y. Shimizu, and Y. Nagai: "Mechanism of surface activated bonding for low-resistance Si/diamond and Si/GaAs heterointerfaces" The 15th International Conference Beam Injection Assessment of Microstructures in Semiconductors, Saint Petersburg, Russia, July 19-24, 2020.
    http://biams2020.org/

  5. Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, R. Miyagawa, Y. Shimizu, and Y. Nagai: "Mechanism of low-temperature direct bonding via surface activation for Si/diamond and Si/GaAs heterointerfaces" International Conference on the Physics of Semiconductors (ICPS) 2020, Sydney, Australia, August 9-14, 2020.
    https://www.icps2020.org/

  6. Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, R. Miyagawa, Y. Shimizu, and Y. Nagai: "How to fabricate low-resistance heterointerfaces for tandem cells by direct bonding at low temperatures" 37th EU PVSEC, Lisbon, Portugal, September 7-11, 2020.
    https://www.photovoltaic-conference.com/conference-topics.html

  7. Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, R. Miyagawa, Y. Shimizu, and Y. Nagai: "Microscopic picture of direct bonding via surface activation for low-resistance Si/wide-gap semiconductor heterointerfaces" PRiME2020, Honolulu, Hawaii, October 4-9, 2020.
    https://ecs.confex.com/ecs/prime2020/cfp.cgi

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- 2019 -

  1. Y. Ohno, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga, Y. Shimizu, N. Ebisawa, K. Inoue, and Y. Nagai: “Two-dimensional polymorphic {111}/{115} grain boundaries in Si-atomistic structure and impurity segregation ability, 2019 Materials Research Society (MRS) Spring Meeting & Exhibit, Phoenix, Arizona, USA, April 22-26, 2019.
    https://www.mrs.org/spring2019

  2. Y. Nagai: “Introduction of a Japanese Collaborative Post Irradiation Facility and Material Irradiation Needs for Universities,” JHR Seminar, French Embassy, Tokyo, 11th April 2019.　[Invited]

  3. Y. Ohno, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, N. Kamiuchi, R. Aso, H.Yoshida, S. Takeda, J. Liang, and N. Shigekawa: “Compositional nanoanalysis at grain boundaries in Si by atom probe tomography combined with FIB operated at low temperatures,” EUROMAT2019, Sep. 1-5, 2019, Stockholm, Sweden. (CP04.01.03, Oral, April 23)
    https://euromat2019.fems.eu/

  4. Y. Ohno, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, and K. Matsunaga: “Impact of polymorphic nanostructures at grain boundaries on segregation ability; for asymmetric Σ9{111}/{115} tilt boundaries in silicon,” International Conferences on Intergranular and Interphase Boundaries in Materials (IIB2019) Paris, France, July 1-5, 2019.
    http://iib2019.org/

  5. Y. Ohno, K. Kutsukake, T. Tamaoka, S. Takeda, Y. Shimizu, N. Ebisawa, K.Inoue, Y. Nagai, and N. Usami: “Impact of misorientation at symmetric grain boundaries on segregation ability; for Σ3{111} tilt boundaries in Si,” International Conferences on Intergranular and Interphase Boundaries in Materials (IIB2019) Paris, France, July 1-5, 2019.
    http://iib2019.org/

  6. T. Shinada, T. Tanii, T. Oya, Y. Shimizu, K. Inoue, Y. Kawano, and E. Prati: “Opportunities of deterministic doping technology for quantum and stochastic processing,” 235th ECS Meeting, Dallas, TX, USA, May 26-30, 2019. [Invited]
    https://www.electrochem.org/235

  7. J. Liang, Y. Shimizu, Y. Ohno, N. Ebisawa, K. Shirasaki, Y. Nagai, M. Kasu, and N. Shigekawa: “Direct bonding of diamond and dissimilar materials for power device applications,” International Symposium on Single Crystal Diamond and Electronics, Jun. 9-12, 2019, Xi’an.
    http://scde.xjtu.edu.cn/

  8. J. Liang, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, S. Kim, M. Kasu, M. Kuball, and N. Shigekawa: “Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications,” 13th Topical Workshop on Heterostructure Microelectronics, August 26(Mon)-29(Thu), 2019, Hotel Grand Terrace Toyama, Toyama, Japan.
    http://www.rciqe.hokudai.ac.jp/twhm2019/

  9. Y. Ohno, Y. Shimizu, Y. Nagai, R. Aso, N. Kamiuchi, H. Yoshida, J. Liang, and N. Shigekawa: “Atomistic structure of Si/GaAs heterointerfaces fabricated by surface activated bonding revealed by STEM combined with low-temperature FIB,” MRS Fall Meeting and Exhibit, Dec. 1-6, 2019, Boston, Massachusetts, USA.
    https://www.mrs.org/fall2019

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- 2018 -

  1. Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue,Y. Nagai, T. Yokoi, K. Nakamura, K. Matsunaga, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama: “Mechanism of Oxygen Sergegation in Multicrystalline Sillicon, “10th International Workshop on Crystalline Silicon for Solar Cells (CSSC-10), Apr. 8-11, 2018, Sendai (Tohoku Univ.)

  2. Y. Shimizu, B. Han, Y. Tu, K. Inoue, and Y. Nagai: “Atom probe study of silicon-based device structures,” Atom Probe Tomography and Microscopy (APT&M) 2018, NIST, Gaithersburg, Maryland, USA, June 10-15, 2018. [Semiconductors and Devices, p. 91 in abstracts] (Presented on June 12) [Invited]

  3. S. Sukenaga, K. Kanehashi, K.-H Kim, H. Yamada, T. Wakihara, K. Ohara, K. Inoue, Y. Nagai, H. Shibata: “Structural role of aluminum cation in alkaline-earth aluminosilicate glasses,” 2018. 7.9-13, PNCS-ESG2018, Saint Malo, France. (7/10)

  4. Y. Ohno, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga, Y. Shimizu, Y. Nagai: “Structural bistability in Σ9{111}/{115} asymmetric grain boundary in Si ingots,”19th International Conference on Extended Defects in Semiconductors (EDS2018) June 24-29, 2018, Thessaloniki, Greece.

  5. R. Kiga, S. Hayashi, S. Miyamoto, Y. Shimizu, T. Endoh, Y. Nagai, and K. M. Itoh: “Atom probe tomography investigation of silicon self-diffusion in isotopically modulated nanopillars,” 20th Scientific International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions (SISS-20), Seikei University, Tokyo, Japan, June 28-29, 2018. [Atom Probe Tomography, O1-3, pp. 5-6 in abstracts, Oral] (Presented on June 28)

  6. Y. Shimizu, Y. Tu, F. Yano, K. Inoue, and Y. Nagai: “Effect of coimplanted carbon on boron behavior in silicon: SIMS and atom probe study,” 20th Scientific International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions (SISS-20), Seikei University, Tokyo, Japan, June 28-29, 2018. [P14, pp. 37-38 in abstracts, Poster] (Presented on June 28)

  7. Y. Ohno, T. Yokoi, A. Nakamura, K. Matsunaga, H. Yoshida, S. Takeda, Y. Shimizu, Y. Nagai: “Growth mechanism of polymorphism of asymmetric Sigma-9{115}/{111} interfaces in silicon,” 34th International Conference on the Physics of Semiconductors (ICPS2018) Jul. 29 - Aug. 3, 2018, Montpellier, France.

  8. T. Toyama, M. Shimodaira, K. Yoshida, K. Inoue, Y. Nagai, M. J. Konstantinovic, R. Gerard: “Ultra-fine defects in a neutron-irradiated Reactor Pressure Vessel steel studied by positron annihilation spectroscopy,” 18th International Conference on Positron Annihilation, Aug. 19-24, 2018, Orlando, USA [invited]

  9. T. Tanii, Y. Suzuki, K. Gi, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, E. Prati, and T. Shinada: “Controlled Creation of Erbium-Oxygen Centers in Silicon by Deterministic Ion Implantation for Room-Temperature Photoluminescence at Telecomm Wavelength,” 22nd International Conference on Ion Implantation Technology (IIT 2018), Congress Centrum Würzburg, Germany, September 16-21, 2018.
    https://www.iit2018.org/

  10. T. Suzudo, H. Takamizawa, Y. Nishiyama, A. Caro, T. Toyama, Y. Nagai, "Modeling of hardening in spinodally-decomposed Fe-Cr binary alloys", NuMat 2018, Seattle, WA, 14-18 October, 2018 (10/16)

  11. Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, and M. Kohyama: “Chemical nanoanalyses at grain boundaries by joint use of scanning transmission electron microscopy and atom probe tomography,” AiMES 2018 ECS and SMEQ Joint International Meeting, Cancun, Mexico, September 30-October 4, 2018. [Z02: Nanotechnology General Session, Nanotechnology: Synthesis and Characterization, 2139, Oral] (Presented on October 3)

  12. L. Zhang, Q. Zhan, Y. Chang, S. Ohnuki, W. Han, X. Yi, F. Wan, T. Toyama, K. Yoshida, Y. Nagai, A. Kimura, N. Hashimoto: ”Role of Si on Neutron-irradiation Damage in Low Activation Ferritic Martensitic Steel,” The 14th Japan-China Symposium on Materials for Advanced Energy Systems and Fission & Fusion Engineering (JCS-14), Sep. 25-27, 2018, Sendai, Japan. (poster 9/26)

  13. C. Zhao, T. Toyama, T. Yoshiie, K. Inoue, T. Nagai: “Effects of Electron Irradiation on Cu Diffusion in Fe Studied by Atom Probe Tomography,” The 14th Japan-China Symposium on Materials for Advanced Energy Systems and Fission & Fusion Engineering (JCS-14), Sep. 25-27, 2018, Sendai, Japan. (poster 9/26)

  14. Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, and Y. Nagai: “Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding,” Summit of Materials Science 2018 (SMS2018), Tohoku University, Sendai, Japan, October 29-30, 2018. [P9, p. 41 in abstracts, Poster] (Presented on October 30)

  15. Y. Ohno, K. Kutsukake, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura and K. Matsunaga: “Chemical nano-analysis at Si grain boundaries by atom probe tomography combined with STEM and ab-initio calculations,” The 8th Forum on the Science and Technology of Silicon Materials 2018, Nov. 18-21, 2018, Okayama University 50th Anniversary Hall, Okayama, Japan. (poster 11/19)

  16. Y. Ohno, K. Kutsukake, T. Tamaoka, S. Takeda, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, and N. Usami: “Recombination activity of inclined Σ3{111} asymmetric grain boundaries in high-performance Si ingots,” The 8th Forum on the Science and Technology of Silicon Materials 2018, Nov. 18-21, 2018, Okayama University 50th Anniversary Hall, Okayama, Japan. (poster 11/19)

  17. Y. Ohno, K Kutsukake, T. Tamaoka, S. Takeda, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, and N. Usami: “Recombination activity of inclined Σ3{111} grain boundaries in high-performance Si ingots,” 2018 Materials Research Society (MRS) Fall Meeting & Exhibit, Boston, Massachusetts, USA, November 25-30, 2018. [Symposium ET02-Silicon for Photovoltaics, ET02.10.07, Poster] (Presented on November 28)

  18. Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, and Y. Nagai: “Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography,” 2018 Materials Research Society (MRS) Fall Meeting & Exhibit, Boston, Massachusetts, USA, November 25-30, 2018. [Symposium ET02-Silicon for Photovoltaics, ET02.10.12, Poster] (Presented on November 28)

  19. R. Kiga, S. Hayashi, S. Miyamoto, Y. Shimizu, T. Endoh, Y. Nagai, and K. M. Itoh: “Oxidation-enhanced Si self-diffusion in isotopically modulated nanopillars,” 2018 Materials Research Society (MRS) Fall Meeting & Exhibit, Boston, Massachusetts, USA, November 25-30, 2018. [Symposium NM03-Nanowires and Related 1D Nanostructures-New Opportunities and Grand Challenges, NM03.15.03, Oral] (Presented on November 29)


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- 2017 -

  1. Y. Ohno, K. Kutsukake, M. Deura, I. Yonenaga, H. Yoshida, S. Takeda, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai: “Dislocations on Sigma-5{013} grain boundaries in mono-cast Si; atomistic structure and effects on mechanical properties,” 2017 MRS Spring Meeting & Exhibit, Apr. 17-21, 2017, Phoenix, Arizona, USA.

  2. Y. Shimizu and K. Inoue: “Dopant detection in silicon nanostructures by atom probe tomography”, 4th Bilateral Italy-Japan Seminar: Innovative Solutions for Single Atom Applications in Photonics and Nanoelectronics, May 2-4, 2017, Colico, Lago di Como, Italy. [Invited]

  3. M. Celebrano, L. Ghirardini, G. Pellegrini, M, Finazzi, L. Duò, Y. Shimizu, Y. Tu, K, Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii, and E. Prati: “Towards efficient detection of photons emitted by Er3+ ions in silicon,” 4th Bilateral Italy-Japan Seminar: Innovative Solutions for Single Atom Applications in Photonics and Nanoelectronics, May 2-4, 2017, Colico, Lago di Como, Italy. [Invited]

  4. A. Abdelghafar, M. Yano, Y. Suzuki, Y. Shimizu, K, Inoue, M, Celebrano, L. Ghirardini, M, Finazzi, G. Ferrari, T. Shinada, E. Prati, and T. Tanii: “Single-ion implantation and its potential application to single photon emitter in the quantum information field,” 4th Bilateral Italy-Japan Seminar: Innovative Solutions for Single Atom Applications in Photonics and Nanoelectronics, May 2-4, 2017, Colico, Lago di Como, Italy. [Invited]

  5. Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka M. Kohyama: “Chemicalnanoanalysesat grain boundariesby joint use of atom probe tomography and TEMcombined with ab-initio calculations,” European Materials Research Society (E-MRS) 2017 Spring Meeting,　2017.5.22-26, Strasbourg, France.

  6. Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Y. Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai: “Atom Probe Study of Erbium and Oxygen Co‐Implanted Silicon,” 2017 Silicon Nanoelectronics Workshop, Jun. 4- 5, 2017, Rihga Royal Hotel Kyoto, Kyoto, Japan.

  7. E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii: “Revisiting room‐temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration,” 2017 Silicon Nanoelectronics Workshop, Jun. 4- 5, 2017, Rihga Royal Hotel Kyoto, Kyoto, Japan.

  8. Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka M. Kohyama: “Mechanism of oxygen segregation at tilt boundaries in Siingots,” ICDS 2017 29th International Conference on Defects in Semiconductors, July 31- Aug.4, 2017, Matsue, Japan.

  9. Y. Shimizu: “Atom probe study of semiconductor-based nanostructure,” IUMRS-ICAM 2017, The 15th International Conference on Advanced Materials, Kyoto University, Kyoto, Japan, August 27-September 1, 2017. [Symposium D-1: Innovative Material Technologies Utilizing Ion Beams, D1-I30-001] (Presented on August 30) [Invited]

  10. K. Inoue, Y. Nagai, K. Ami, Y. Hatano: “Deuterium trapping at vacancy clusters in neutron-irradiated tungsten studied by positorn annihilation spectroscopy,” Positron Studies on Defects, Sep.3-8, 2017, Dresden, Germany. [oral]

  11. M. Shimodaira, K. Yoshida, T. Toyama, K. Inoue, M. Konstantinovic, R. Gerard and Y. Nagai: “Tomographic analysis on lattice defects and solute clusters in a RPV steel using combination of STEM/APT,” The 20th of the International Group on Radiation Damage Mechanisms, Santiago de Compostela, Spain, Oct. 15-20, 2017. [oral]

  12. Y. Ha, H. Takamizawa, J. Katsuyama, S. Hanawa, Y. Nishiyama: “Effect of Ion Irradiation on Microstructural Change and Hardening in HAZ under Weld Overlay Cladding of RPVs,” The 20th of the International Group on Radiation Damage Mechanisms, Santiago de Compostela, Spain, Oct. 15-20, 2017. [oral]

  13. Y. Tu, B. Han, Y. Shimizu, M. Inoue, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, S. Nagata, K. Inoue, Y. Nagai: “Direct Observation of Trapping of Implanted Deuterium in Poly-Si/Al2O3/HfxSi1-xO2/SiO2 High-k Stacks,” 2017 MRS Fall Meeting & Exhibit, Nov. 26 - Dec. 1, 2017, Boston, USA. [poster]

  14. Y. Shimizu, B. Han, W. Jevasuwan, K. Nishibe, Y. Tu, K. Inoue, N. Fukata, Y. Nagai: “Dopant Distribution Analysis Core-Shell Nanowires by Atom Probe Tomography,” 2017 MRS Fall Meeting & Exhibit, Nov. 26- Dec. 1, 2017, Boston, USA. [oral]


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- 2016 -

  1. Y. Ohno, K. Inoue, S. Ninomiya, K. Kutsukake, K. Fujiwara, M. Deura, I.Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama:” Nanoscopic mechanism of impurity segregation at grain boundaries in silicon,” MRS Spring Meeting & Exhibit, Mar. 28- Apr. 1, 2016, Phoenix, Arizona, USA.

  2. Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, and Y. Nagai: “Self-organization of metal silicide epilayers at grain boundaries in silicon,” MRS Spring Meeting & Exhibit, Mar. 28- Apr. 1, 2016, Phoenix, Arizona, USA.

  3. B. Han, Y. Shimizu, K. Inoue, W. Jevasuwan, N. Fukata, Y. Nagai: “Characterization of Boron Doping in Individual Ge / Si Core-Shell Nanowires Investigated by Atom Probe Tomography,” MRS Spring Meeting & Exhibit, Mar. 28- Apr. 1, 2016, Phoenix, Arizona, USA.

  4. M. Shimodaira, Y. Nagai, T. Toyoma, K. Yoshida, K. Inoue, M. Konstantinovic, R. Gerard: “Microstructural analysis of irradiated RPV steels using state-of-the-art TEM,” International Group on Radiation Damage Mechanisms (IGRDM-19), Apr. 10-15, 2016, Asheville, North Carolina, USA.

  5. Y. Nagai, M. Shimodaira, T. Toyoma, K. Yoshida, K. Inoue, M. Konstantinovic, R. Gerard: “Microstructural change in Tihange-2 surveillance test specimens studied by APT, PAS and TEM,” International Group on Radiation Damage Mechanisms (IGRDM-19), Apr. 10-15, 2016, Asheville, North Carolina, USA.

  6. Y. Shimizu, T. A. Bakhsh, A. Sadr, J. Espigares, J. Tagami, B. Han, Y. Tu, K. Yoshida, K. Inoue, and Y. Nagai: “Atom Probe Tomographic Study of Human Tooth Materials,” Atom Probe Tomography & Microscopy 2016, The 55th International Field Emission Symposium (IFES), Jun. 12-17, 2016 , Hyundai Hotel, Gyeongju, South Korea. (poster)

  7. B. Han, Y. Shimizu, G. Seguini, E. Arduca, C. Castro, G. B. Assayag, K. Inoue, Y. Nagai, S. Schamm-Chardon, M. Perego:”Atom Probe Study of Structural Characteristics of Si Nanocrystals Embedded in SiO2 Matrix,” Atom Probe Tomography & Microscopy 2016, The 55th International Field Emission Symposium (IFES), Jun. 12-17, 2016 , Hyundai Hotel, Gyeongju, South Korea.

  8. Y. Tu, H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, Y. Nagai: “Influence of high power laseron B distribution in Si obtained by Atom Probe Tomography,” Atom Probe Tomography & Microscopy 2016, The 55th International Field Emission Symposium (IFES), Jun. 12-17, 2016 , Hyundai Hotel, Gyeongju, South Korea.

  9. Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani: “Segregation mechanism at small angle tilt boundaries in Si,” Extended Defects in Semiconductors 2016, Sep. 25-29, 2016, Les Issambres, France.

  10. T. Suzudo, Y. Nagai, A. Caro: “Atomistic Modeling of Hardening in Thermally-Aged Fe-Cr Binary Alloys,” Dislocations 2016 Conference, Sep. 19-23, 2016, Purdue University, West Lafayette, Indiana, USA.

  11. Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani: “Nanoscopic segregation ability of large-angle tilt boundaries in Si,” Extended Defects in Semiconductors 2016, Sep. 25-29, 2016, Les Issambres, France.

  12. Y. Ohno, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, and S. Takeda: “Grain boundary segregation of nickel, copper, and oxygen atoms in a mono-like Si crystal,” 9th International Workshop on Crystalline Silicon for Solar Cells (CSSC-9) & 3rd Silicon Materials Workshop, Arizona State University, USA, October 10-12, 2016.

  13. Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, and M. Kohyama: “Segregation ability of oxygen and carbon atoms at large-angle grain boundaries in Si,” 9th International Workshop on Crystalline Silicon for Solar Cells (CSSC-9) & 3rd Silicon Materials Workshop, Arizona State University, USA, October 10-12, 2016.

  14. K. Yanagiuchi, Y. Ishida, Y. Shimizu, Y. Nozawa, N. Ebisawa, T. Toyama, K. Inoue, and Y. Nagai: “Depth resolution of multilayer thin films by atom probe tomography and Auger electron spectroscopy using a high angle inclined,” 7th International Symposium on Practical Surface Analysis (PSA-16), Oct 16-21, 2016, Daejeon, Korea. [Applications I (semiconductor, ceramic, metal, composite, etc.), O-29] (Presented on October 19)　[Invited]

  15. B. Han, Y. Shimizu, G. Seguini, E. Arduca, C. Castro, G. B. Assayag, K. Inoue, Y. Nagai, S. Schamm-Chardon, M. Perego: “Characterization of Si Nanocrystals Embedded in SiO2 Matrix by Atom Probe Tomography,” EMN Meeting on Nanocrystals, Oct. 17-21, 2016, Xi’an, China. [Invited]

  16. Y. Shimizu, B. Han, Y. Tu, K. Inoue, F. Yano, M. Inoue, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, and Y. Nagai: “Hydrogen distribution analysis in Al2O3 films by atom probe tomography,” 2016 Materials Research Society (MRS) Fall Meeting & Exhibit, Nov.27-Dec.2, 2016, Boston, Massachusetts, USA. (poster)

  17. Y. Tu, B. Han, Y. Shimizu, K, Inoue, Y, Nagai, M. Yano, Y. China, T. Tanji, T. Shinada: “Direct Observation of Single Ion Implanted Dopants Distribution in Silicon by Atom Probe Tomography ,” 2016 Materials Research Society (MRS) Fall Meeting & Exhibit, Nov.27-Dec.2, 2016, Boston, Massachusetts, USA.

  18. T. Toyama, M. Shimodaira, K. Tomura, N. Ebisawa, K. Nagumo, Y. Shimizu, K. Inoue, Y. Nagai: “Irradiation effects on diffusivity of copper in ferromagnetic iron studied by atom probe tomography,” 2017 TMS Annual Meeting & Exhibition, Feb.26-Mar.2, 2017, San Diego, California, USA.

  19. M. Shimodaira, T. Toyama, K. Yoshida, K. Inoue, Y. Nagai, T. Yoshiie, M. Konstantinovic, R. Gerard, “Hardening mechanism of a neutron irradiated reactor pressure vessel steel studied by APT, PAS and WB-STEM,” 2017 TMS Annual Meeting & Exhibition, Feb.26-Mar.2, 2017, San Diego, California, USA.

  20. T. Suzudo, Y. Nagai, A. Caro: “Atomistic Modeling of Hardening in Thermally-aged Fe-Cr Binary Alloys,” 2017 TMS Annual Meeting & Exhibition, Feb.26-Mar.2, 2017, San Diego, California, USA.

  21. Y. Matsukawa, T. Takeuchi, Y. Kakubo, T. Suzudo, H. Watanabe, H. Abe, T. Toyama, Y. Nagai: “The Two-step Nucleation of G-phase in Ferrite: The Critical Size and Composition for the Structural Change of Solute Clusters,” 2017 TMS Annual Meeting & Exhibition, Feb.26-Mar.2, 2017, San Diego, California, USA.


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- 2015 -

  1. Y. Nagai, M. Shimodaira, T. Toyama, Y. Shimizu, K. Inoue, N. Ebisawa, “Diffusivity and Solubility of Cu in Fe and A533B Measured by Atom Probe Tomography ,” TMS2015, Mar. 15-19, 2015, Orlando, Florida, USA.

  2. T. Toyama, T. Yamamoto, P. Wells. Y. Nagai1. G. Odette, “Neutron Flux Effects on Irradiation-Induced Solute Clusters and Matrix Defects in RPV Steels Studied by Positron Annihilation,” TMS2015, Mar. 15-19, 2015, Orlando, Florida, USA.

  3. Y. Ohno, K. Inoue, M. Deura, K. Kutsukake, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, and M. Kohyama: “Effects of bond distortions on impurity segregation in high-angle grain boundaries in silicon,” 2015 Materials Research Society Spring Meeting, Apr. 6-10, 2015, San Francisco, California, USA.

  4. Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, and Y. Nagai: “Cu accumulation mechanism at small-angle tilt boundaries in Si,” 8th International Workshop on Crystalline Silicon for Solar Cells, May 5-8, 2015, Bamberg, Bavaria, Germany.

  5. Y. Ohno, K. Inoue, K. Fujiwara, M. Deura, K. Kutsukake, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, and Y. Nagai: “Accumulation of oxygen atoms at small-angle tilt boundaries in Si,” 8th International Workshop on Crystalline Silicon for Solar Cells, May 5-8, 2015, Bamberg, Bavaria, Germany.

  6. Y. Shimizu, H. Takamizawa, K. Inoue, F. Yano, Y. Nagai, L. Lamagna, G. Mazzeo, M. Perego, and E. Prati: “Atom probe analysis for dopant profiling of near-surface by employing focused ion beam direct deposition technique,” APT User’s Group Meeting, Jun. 9-12, 2015, Madison, USA.

  7. Y. Shimizu, K. Inoue, “3D atomic-scale-analysis of elemental distribution in silicon nanoelectronics,” 3rd Bilateral Italy-Japan Seminar Silicon nanoelectronics for advanced applications, June 16, 2015, Campus Plaza Kyoto, Kyoto, Japan. [Invited]

  8. Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, and M. Kohyama: “Nanoscopic segregation mechanism of impurity atoms at Σ9{114} grain boundaries in silicon crystals,” 28th International Conference on Defects in Semiconductors, Jul. 27-31, 2015, Espoo, Finland.

  9. Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, and Y. Nagai: “Nanoscopic precipitation mechanism of copper atoms at small-angle tilt boundaries in silicon crystals,” 28th International Conference on Defects in Semiconductors, Jul. 27-31, 2015, Espoo, Finland.

  10. Y. Shimizu, H. Bin, Y. Tu, K. Inoue, Y. Nagai: “Elemental distributions in semiconductor-based device structures analyzed by atom probe tomography,” ISAMR2015, Aug. 16-20, 2015, Sun Moon Lake, Taiwan. [Invited]

  11. K. Shima, Y. Tu, B. Han, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, and Y. Shimogaki: “Characterization and process development of CVD/ALD-based Cu(Mn)/Co(W) interconnect system,” Advanced Metallization Conference, Sep. 9-11, 2015, The University of Texas, Austin, Taxas, USA.

  12. G. Seguini, E. Arduca, B. Han, Y. Shimizu, K. Inoue, Y. Nagai, C. Castro, S. Schamm-Chardon, G. BenAssayag, and M. Perego: “Atom probe tomography (APT) and energy filtered transmission electron microscopy (FETEM) on a single plane of Si Nanocrystals embedded in SiO2 matrix,” European Materials Research Society 2015 Fall Meeting, Sep. 15-18, 2015, Warsaw University of Technology, Warsaw, Poland.

  13. Y. Nagai: “Nuclear Materials Study by Positron Annihilation Spectroscopy Combined with Atom Probe Tomography,” 17th International Conference on Positron Annihilation, Sep. 20-25, Wuhan, China.　[Invited]

  14. K. Inoue, N. Ebisawa, K. Tomura, H Xu, Y. Nagai, D. Egusa, E. Abe, K. Kishida, H. Inui, M. Yamasaki, Y. Kawamura: “Analysis of Local Chemical Composition in Mg-TM-RE Alloys with LPSO/OD Structure by Atom Probe Tomography,” Mg2015(The 10th International Conference on Magnesium Alloys and Their Applications), Oct. 11-16, 2015, Jeju, Korea. (10/12)

  15. K. Yanagiuchi, Y. Ishida, Y. Shimizu, Y. Nozawa, N. Ebisawa, T. Toyama, K. Inoue, Y. Nagai, “Depth Profiling of Multilayer Thin Films by Atom Probe Tomography Compared with Auger electron spectroscopy of Higher Depth Resolution,” Oct. 25-30, 2015, ALC15, Matsue, Japan.

  16. Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, and Y. Nagai: “Metal silicide epilayers self-organized at grain boundaries in silicon,” The 2nd East-Asia Microscopy Conference (EAMC2), The Himeji Chamber of Commerce and Industry, Nov. 24-27, 2015, Himeji, Hyogo, Japan.


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- 2014 -

  1. K. Shima, Y. Tu, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, Y. Shimogaki, “Observation of Grain-Boundary Stuffing and Barrier Performance in CVD-Cu(Mn)/ALD-Co(W) System by Atom Probe Tomography”, Materials for Advanced Metallization 2014 (MAM2014), Mar. 2-5, 2014, Chemnitz, Germany.

  2. Y. Ohno, K. Inoue, S. Ninomiya, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai: “Three-dimensional impurity distribution at sigma-3 and sigma-9 grain boundaries in silicon,” European Materials Research Society 2014 Spring Meeting, Lille, May 26–30, 2014, France.

  3. Y. Shimizu, H. Takamizawa, B. Han, Y. Kawamura, M. Uematsu, E. E. Haller, K. M. Itoh, T. Toyama, and Y. Nagai: “Interfacial analysis of arsenic ion-implanted germanium isotopic multilayer structures studied by atom probe tomography,” Initernataional Conference on Atom Probe Tomography & Microscopy (APT&M), Aug. 31–Sep. 5, 2014, The University of Stuttgart, Stuttgart, Germany.

  4. K. Inoue, H. Takamizawa, Y. Shimizu, Y. Nagai: “Elemental distribution analysis in silicon-based semiconductor devices,” Initernataional Conference on Atom Probe Tomography & Microscopy (APT&M), Aug. 31-Sep.5, 2014, Stuttgart, Germany. [Invited]

  5. K. Inoue, H. Takamizawa, Y. Shimizu, B. Han, Y. Nagai, F. Yano, Y. Kunimune, M. Inoue, A. Nishida: “Dopant drive-in path analysis in poly-silicon filled in trench type 3D-MOSFET using atom probe tomography,” International Conference on Solid State Devices and Materials (SSDM), Sep. 8-11, 2014, Tsukuba, Japan.

  6. K. Shima, Y. Tu, H. Bin, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, Y. Shimogaki: “Sub-nanoscale structure and barrier performance of Cu(Mn)/Co(W) system for ULSI Cu interconnects examined by atom probe tomography,” 1st Belux Workshop on Coating, Materials, Surfaces and Interfaces, Sep. 11-12, 2014, Belvaux, Luxembourg.

  7. Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama: “Interactions of impurity atoms with Σ3{111} and Σ9{114} grain boundaries in silicon,” 17th Extended Defects in Semiconductors (EDS) 2014, Sep. 14-19, 2014, Göttingen, Germany.

  8. Y. Nagai, K. Nagumo, K. Inoue, T. Toyama, M. Shimodaira, Y. Shimizu: “Nuclear Materials Study by Age-Momentum Correlation Method,” The International Workshop on Positron Studies of Defects 2014 (PSD-14), Sep. 14-19, 2014, Kyoto University, Japan. (9/18)

  9. K. Nagumo, M. Shimodaira, K. Inoue, T. Toyama, Y. Nagai: “The Development of an Age- Momentum Correlation Apparatus Using an Avalanche Photodiode,” The International Workshop on Positron Studies of Defects 2014 (PSD-14), Sep. 14-19, 2014, Kyoto University, Japan. [poster](9/15)

  10. Y. Nagai: “Revisit to traditional diffusivity and solubility study for nuclear material degradation using state-of-the-art techniques,” The 5th International Symposium of Advanced Energy Science, Sep. 30-Oct. 2, 2014, Institute of Advanced Energy, Kyoto University, Japan. [invited] (9/30)

  11. K. Inoue, N. Ebisawa, K. Tomura, Y. Nagai, H.X. Xu, D. Egusa, E. Abe; “Atom-Probe-Tomographic Studies on Mg-Zn-Y Alloys with LPSO Phases,” The 2nd International Symposium on Long-Period Stacking Ordered Structure and Its Related Materials (LPSO2014), Oct.5-8, 2014, Kumamoto, Japan. [poster] (10/6)

  12. K. Inoue, N. Ebisawa, K. Tomura, T. Toyama, Y. Nagai; “Diffusion Coefficient of Zn and Y in Mg Investigated by Atom Probe Tomography,” The 2nd International Symposium on Long-Period Stacking Ordered Structure and Its Related Materials (LPSO2014), Oct.5-8, 2014, Kumamoto, Japan. [poster] (10/6)

  13. Y. Nagai, K. Inoue, T. Toyama, K. Nagumo, Y. Shimizu, N. Ebisawa, M. Hasegawa: “Nuclear material studies by positron annihilation spectroscopy,” 11th International Workshop on Positron and Positronium Chemistry (PPC-11), Nov. 9-14, 2014, Cidade de Goa, India. [Invited] (11/10)

  14. Y. Nagai, M. Shimodaira, T. Toyama, F. Takahama, K. Inoue: “Diffusivity and Solubility of Cu in Fe and A533B,” 18th International Group on Radiation Damage Mechanisms (IGRDM-18), Nov. 23-28, 2014, Miyazaki, Japan.

  15. M. Shimodaira, T. Toyama, K. Inoue, Y. Nagai, M. Konstantinovic: “Microstruture in Tihange-II Surveillance Studied by Atom Probe Tomography and Positron Annihilation Spectroscopy,” 18th International Group on Radiation Damage Mechanisms (IGRDM-18), Nov. 23-28, 2014, Miyazaki, Japan.

  16. T. Toyama, T. Yamamoto, M. Shimodaira, Y. Nagai, P. Wells, G.R. Odette: “Neutron Flux Effects on Irradiation-Induced Microstructures in RPV Steels Studied by Positron Annihilation,” 18th International Group on Radiation Damage Mechanisms (IGRDM-18), Nov. 23-28, 2014, Miyazaki, Japan.

  17. H. Takamizawa, Y. Nozawa, Y.Kakubo, J. Katsuyama Y.Nishiyama, K. Onizawa, T. Toyama,Y. Nagai : “Thermal aging and neutron irradiation effect for microstructure and hardness change in ferrite phase of weldoverlay cladding of reactor pressure vessels,” 18th International Group on Radiation Damage Mechanisms (IGRDM-18), Nov. 23-28, 2014, Miyazaki, Japan.

  18. Y. Nagai, M. Shimidaira, T. Toyama, N. Ebisawa, Y. Nozawa, Y. Shimizu, K. Inoue: “Estimation of diffusivity and solubility by atom probe tomography: Revisit to traditional study using a state-of-the-art technique,” 2014 Materials Research Society Fall Meeting, Nov. 30-Dec. 5, 2014, Boston, Massachusetts, USA. [Invited] (12/3)

  19. Y. Ohno, K. Inoue, M. Deura, K. Kutsukake, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama; “Effects of bond distortions on impurity segregation in high-angle grain boundaries in silicon,” 2014 Materials Research Society Fall Meeting, Nov. 30-Dec. 5, 2014, Boston, Massachusetts, USA. [oral]


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- 2013 -

  1. T. Toyama, A. Kuramoto, Y. Nozawa, Y. Matsukawa, M. Hasegawa, M. Valo, Y. Nagai: “Effects of Post-Irradiation Annealing and Re-Irradiation on Microstructure in Surveillance Test Specimens of RPV Steel Studied by 3D-AP and Positron Annihilation”, TMS2013, Mar. 3-7, 2013, San Antonio, USA .(3/5)

  2. Y. Nagai, Y. Kakubo, T. Takeuchi, Y. Matsukawa, T. Toyama, J. Kameda, Y. Nishiyama, J. Katsuyama, K. Onizawa: “Relationship between Microstructural Change and Hardening by Thermal Aging in Stainless Steel Weld Overlay Cladding of Nuclear Reactor Pressure Vessels”, TMS2013, Mar. 3-7, 2013, San Antonio, USA .(3/5)

  3. Y. Matsukawa, T. Takeuchi, Y. Kakubo, N. Ebisawa, Y. Nozawa, T. Toyama, Y. Yamaguchi, J. Katsuyama, Y. Nishiyama, Y. Nagai: “Crystal Structure Analysis of Nanometer-Sized G-Phase Precipitates in a d/ Duplex Stainless Steel Weld Overlay Cladding of Light-Water Reactor Pressure Vessel Steels”, TMS2013, Mar. 3-7, 2013, San Antonio, USA. (3/5)

  4. T. Yamamoto, T. Toyama, P. Wells, A. Kuramoto, Y. Nagai, G. Odette: “Microstructural Characterization of Test Reactor Irradiated RPV Steels by Post-Irradiation Annealing and State-of-the-Art Characterization Tools”, TMS2013, Mar. 3-7, 2013, San Antonio, USA. (3/5)

  5. Y. Shimizu, M. Hatakeyama, K. Inoue, F. Yano, Y. Nagai: “Dopant analysis of semiconductor devices with atom probe tomography”, SISS-15, Apr. 25-26, 2013, Seikei Univ., Japan. ( 4/25) [Invited]

  6. Y. Nagai, T. Toyama, F. Takahama,A. Kuaramoto, Y. Shimizu, K. Inoue: “Diffusion coefficient of Cu in Fe,” IGRDM-17, May.19-24, 2013, Embiez Island, France. (5/21)

  7. T. Toyama, A. Kuramoto, Y.Nozawa, Y. Matsukawa, M.Hasegawa, M. Valo, Y. Nagai, “Effects of post-irradiation annealing and re-irradiation onmicrostructure in surveillance test specimens of a VVER-typeRPV steel,” IGRDM-17, May.19-24, 2013, Embiez Island, France. (5/20)

  8. J. Jiang , Y. C. Wu, Y. Nagai, K.Inoue, T. Toyama, N. Ebisawa, Y.Nozawa, “Microstructural Evolution of RPV Steels under Protonand Heavy Ions Irradiation,” IGRDM-17, May.19-24, 2013, Embiez Island, France. (5/20)

  9. Y. Nagai: “In-depth Analysis of Defects and Impurities in Nano-scale Transistor Structures by 3D Atom Probe”, ICSI-8, Jun. 2-6, 2013, Kyushu Univ., Japan. (6/5) [Invited]

  10. Y. Shimizu, H. Takamizawa, Y. Nozawa, K. Inoue, T. Toyama, H. Moritai, Y. Yabuuchi, M. Ogurai, Y. Nagai, “ A strategy for obtaining elemental distributions near the surface without temperature rise using focused ion beam direct deposition”, Jun. 26-28, 2013, 2013 APT User’s Group Meeting, Madison, Wisconsin, USA.

  11. Y. Nagai: “Material Degradation by Neutron Irradiation in Light Water Reactors Studied by Atom Probe Tomography and Positron Annihilation”, PRICM-8, Aug. 4-9, 2013, Waikoloa, Hawaii, USA. (8/9) [Invited]

  12. Y. Nagai: “Study of nuclear materials by using positron annihilation and atom probe tomogprahy”, SLOPOS2013, Sep. 15-20, 2013, Technical University of Munich, Germany. (9/19) [Invited]

  13. Q. Xu, K. Sato, T. Yoshiie, T. Sano, H. Kawabe, Y. Nagai, K. Inoue, T. Toyama, N. Oshima, A. Kinomura, Y. Shirai: “Positron bean facility at Kyoto University Reactor”, SLOPOS2013, Sep. 15-20, 2013, Technical University of Munich, Germany. (9/20)

  14. M. Kubota, Y. Ishida, K. Yanagiuchi, H. Takamizawa, Y. Shimizu, Y. Nozawa, T. Toyama, K.　Inoue and Y. Nagai: “Depth Analysis of Multilayer Thin Films by Atom Probe Tomography and Auger Electron Spectroscopy,” PSA-13, Nov. 10-15, 2013. Okinawa, Japan. (Poster)


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- 2012 -

  1. Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, K. M. Itoh, T. Toyama, Y. Nagai: “Tomographic study of spatial resolution in laser-assisted atom probe using semiconductor isotopic heterostructures,” IFES2012, May 21-25, 2012, Tuscaloosa, Alabama, USA. (5/23)

  2. H. Takamizawa, Y. Shimizu, T. Toyama, Y. Nagai: “Enlarged Boron Concentration Fluctuation in MOSFET Channel After Source/Drain Extension Formation Studied by Atom Probe Tomography,” IFES2012, May 21-25, 2012, Tuscaloosa, Alabama, USA. (5/23)

  3. H.X. Xu, T. Toyama, Y. Matukawa, A. Kuramoto, Y. Nagai, D. Egusa, E. Abe: “Mg-Zn-Y alloys with long-period stacking order structures studied by positron annihilation spectroscopy”, ICPA-16, Aug. 19-24, 2012, Bristol, UK.

  4. Y. Nagai, A. Kuramoto, T. Toyama, T. Takeuchi, M. Hasegawa: “Impact of irradiation-induced defects on prediction of irradiation embrittlement of nuclear reactor pressure vessel steels: - Role of positron annihilation study -“, ICPA-16, Aug. 19-24, 2012, Bristol, UK. (8/21) [Invited]

  5. T. Toyama, Y. Matsukawa, K. Saito, Y. Nagai, S. Kim, Y. Sato, H. Abe, Y. Shinohara: “Microstructural analysis of Zr-Nb alloy using positron annihilation and three-dimensional atom probe”, ICPA-16, Aug. 19-24, 2012, Bristol, UK. (8/21)

  6. K. Inoue: “Positronium in alkaline earth fluorides”, ICPA-16, Aug. 19-24, 2012, Bristol, UK. (8/20)

  7. Hongxia Xu, K. Inoue, Y. Nagai, T. Toyama, Y. Matsukawa, A. Kuramoto, D. Egusa, E. Abe, “Atom probe and positron annihilation study of the Mg-Zn-Y alloys with long period stacking ordered (LPSO) phases”, LPSO2012, Oct. 1-3, 2012, Sapporo, Japan. (11/2) (poster)

  8. T, Takeuchi, Y. Kakubo, Y. Matsukawa, Y. Nozawa, Y. Nagai, Y. Nishiyama, J. Katsuyama, K. Onizawa, M. Suzuki: “Effects of neutron irradiation on microstructures and hardness of stainless steel weld-overlay cladding of nuclear reactor pressure vessels,” NuMat2012, Oct. 21-25, 2012, Osaka, Japan. (poster)

  9. Y. Matsukawa, Y. Murakami, K. Saito, T. Toyama, Y. Nagai, S. Kim, H. Muta, M. Yamaguci, Y. Shinohara, H. Abe: “Atom-probe local composition analysis on the surface oxide film in a Zr-Nb alloy,” NuMat2012, Oct. 21-25, 2012, Osaka, Japan.

  10. Y. Matsukawa, Y. Murakami, K. Saito, T. Toyama, Y. Nagai, T. Maruyama, T. Matsumoto, H. Muta, M. Yamaguci, Y. Shinohara, H. Abe: “Microstructure and micro-chemical composition of advanced fuel cladding material “J-AlloyTM”,”, NuMat2012, Oct. 21-25, 2012, Osaka, Japan.

  11. T. Yamamoto, P. Wells, T. Toyama, Y. Nagai, Y. Wu, G. R. Odette: “Microstructural characterization of test reactor irradiated RPV steels by post-irradiation annealing and state-of-the-art characterization tools,” NuMat2012, Oct. 21-25, 2012, Osaka, Japan.

  12. Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, K. M. Itoh, E. E. Haller, T. Toyama, Y. Nagai: “Atom Probe Tomography of Germanium Isotopic Multilayer Structures”, 2012MRS Fall Meeting, Nov. 25-30, 2012, Boston, USA. (11/26)

  13. H. Takamizawa : “Atom Probe Tomography of Fin-structure Prepared by Focused Ion Beam Direct Deposition”, 2012MRS Fall Meeting, Nov. 25-30, 2012, Boston, USA. (11/29)


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- 2011 -

  1. Y. Nagai: “3D Atom Probe Field Ion Microscopy and Positron Annihilation - Complementary Use for Study of Irradiation Effects in Materials -“, Workshop on Radiation Effects in Materials, Jan.27-29, 2011, Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Japan. (1/28)

  2. Y. Nagai: “Atom Probe Technology for Variability Study”, International Symposium on Characteristics Variability in Scaled Transistors, Feb. 10, 2011, Institute of Industrial Science, the University of Tokyo, Japan. [Invited]

  3. Y. Shimizu, H. Takamizawa, K. Inoue, T. Toyama, Y. Nagai, N. Okada, M. Kato, H. Uchida, F. Yano, T. Tsunomura, A. Nishida, and T. Mogami: “Atomic-scale analysis for boron and carbon atoms co-implanted into silicon studied by laser-assisted atom probe tomography”, International Symposium on Characteristics Variability in Scaled Transistors, Feb. 10, 2011, Institute of Industrial Science, the University of Tokyo, Japan. (poster)

  4. H. Takamizawa, K. Inoue, Y. Shimizu, T. Toyama, Y. Nagai, N. Okada, M. Kato, H. Uchida, F. Yano, T. Tsunomura, A. Nishida, T. Mogami: “Three-dimensional dopant distributions in patterned MOSFETs studied by laser-assisted atom probe tomography “, International Symposium on Characteristics Variability in Scaled Transistors, Feb. 10, 2011, Institute of Industrial Science, the University of Tokyo, Japan. (poster)

  5. A. Kuramoto, T. Takeuchi, T. Toyama, Y. Nagai, M. Hasegawa, T. Yoshiie, Y. Nishiyama: “Effects of Irradiation Dose on Microstructural Evolution and Hardening of High- and Low-Cu Reactor Pressure Vessel Steels”, TMS 2011, Feb. 27- Mar. 3, San Diego, USA. (2/27)

  6. Y. Matsukawa, G. S. Liu, I. M. Robertson: “In-situ TEM Study on Elastic Interaction between a Prismatic Dislocation Loop and a Gliding Dislocation”, TMS 2011, Feb. 27- Mar. 3, San Diego, USA.

  7. Y. Nagai, A. Kuramoto, T. Toyama, T. Takeuchi, M. Hasegawa: “Positron annihilation study of neutron-irradiated nuclear reactor pressure vessel steels and their model alloys,” The 10th International Workshop on Positron and Positronium Chemistry (PPC 10), Sep.5-11, 2011, Smolenice, Slovakia. [Invited]

  8. Y. Shimizu: “Characterization of Three-Dimensional Dopant Distribution in MOSFETs by Atom Probe,” Nano-S&T 2011, Oct.23-26, 2011, Dalian, China. [Invited]

  9. Y. Matsukawa: “On in situ TEM analysis of crack initiation,” International Workshop on Predictability of long-term Ageing MEchanisms of reactor components based on modelling and LAboratory experiments (PAMELA) Sep. 19-21, 2011, SCK•CEN, Mol, Belgium . (9/21)

  10. Y. Matsukawa, K. Saito, Y. Murakami, T. Toyama, S. Kim, Y. Satoh, H. Abe, T. Iwai, N. Sekimura, Y. Shinohara: “Atom probe tomography characterization of ion irradiation-induced precipitation in Zr-Nb alloys,” Workshop on Ion Implantation as a Neutron Irradiation Analogue, Sep. 26-28, 2011, Oxford.

  11. T. Toyama, Y. Nozawa, Y.Matsukawa, M. Hatakeyama, Y. Nishiyama, M. Hasegawa, Y.Nagai: “Microstructural analysis just below intergranularfractured surfaces in RPV steels and their model alloys using atom probe tomography,” IGRDM-16, Dec. 5-9, 2011, Santa Barbara, USA. (12/5)

  12. T. Yamamoto, T. Toyama, Y. Nagai and G. R. Odette: “Effects of Post-Irradiation Annealing on BR2 Irradiated RPV Steels Characterized by Positron Annihilation and Microhardness,” IGRDM-16, Dec. 5-9, 2011, Santa Barbara, USA. (12/5)

  13. A. Kuramoto, T. Takeuchi, T. Toyama, Y. Nagai, M. Hasegawa, T. Yoshiie, Y. Nishiyama: “The correlation of microstructural evolution and hardening of RPV steels studied by atom probe tomography and Positron annihilation,” IGRDM-16, Dec. 5-9, 2011, Santa Barbara, USA. (12/5)

  14. J. Katsuyama, Y. Nishiyama, K. Onizawa, T. Toyama and Y. Nagai: “Irradiation embrittlement susceptibility of heat-affected zone materials of reactor pressure vessel steels,” IGRDM-16, Dec. 5-9, 2011, Santa Barbara, USA. (12/6)

  15. K. Onizawa, J. Katsuyama, T. Tobita, Y. Nishiyama, T. Toyama and Y. Nagai: “Fracture toughness evaluation of irradiated heataffected zone materials of reactor pressure vessel steels,” IGRDM-16, Dec. 5-9, 2011, Santa Barbara, USA. (12/6)

  16. T. Toyama, Y. Nozawa, Y. Matsukawa, M. Hatakeyama, Y. Nagai, W. Van Renterghem, S. Van Dyck, A. Al Mazouzi (Speaker: Y. Nagai): “Irradiation-induced precipitates and grain boundary segregation in 304 stainless steel neutron-irradiated to 24 dpa studied by atom probe tomography,” IGRDM-16, Dec. 5-9, 2011, Santa Barbara, USA. (12/9)

  17. Y. Nagai, T. Takeuchi, J. Kameda, T. Toyama, M. Hasegawa, T. Ohkubo, Y. Nishiyama and K. Onizawa: “Microstructural change by neutron irradiation in stainless steel weld overlay cladding of nuclear reactor pressure vessels,” IGRDM-16, Dec. 5-9, 2011, Santa Barbara, USA. (12/9)


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- 2010 -

  1. Y. Nagai, T. Toyama, M. Hasegawa, T. Ohkubo, A. Almazouzi, E. van Walle, R. Gerard: “Evolution of Nano-structures in Pressure Vessel Steels in the Course of Irradiation,” 5th Forum on New Materials, CIMTEC 2010, Jun. 13-18, 2010, Montecatini Terme, Italy. [invited](6/17)

  2. Y. Nagai: “3D Atom Probe Field Ion Microscopy and Positron Annihilation Complementary Use for Materials Research”, 12th International Workshop on Slow Positron Beam Techniques, Aug. 1-6, 2010, Magnetic Island, Australia. [invited](8/3)

  3. K. Inoue, H. Takamizawa, F. Yano, T. Tsunomura, A. Nishida, Y. Nagai, M. Hasegawa: “Dopant Distributions in MOSFET Structures by Atom Probe Tomography”, International Conference on Microscopy, ICM17, Sep. 19-24, 2010, Rio de Janeiro, Brazil.

  4. M. Kubota, H. Takamizawa, T. Toyama, K. Inoue, Y. Shimizu, Y. Ishida, K. Yanagiuchi, Y. Nagai: “Influences of Specimen Tip Diameter and Pulsed-Laser Power on a Mass Resolution of Laser Assisted Atom Probe”, 5th International Symposium on Practical Surface Analysis, Oct. 3-7, 2010, Gyeongju, Korea.

  5. Y. Matsukawa: “Deformation Twinning in Bulk Aluminum with Coarse Grains”, The 12th International Conference on Aluminum Alloys (ICAA-12), Sep. 5-9, 2010, Yokohama, Japan.

  6. K. Inoue, H. Takamizawa, T. Toyama, Y. Shimizu, Y. Nagai, F. Yano, T. Tsunomura, A. Nishida, T. Mogami: “Atom Probe Tomography -Dopant Distributions in MOSFET-”, ITRS 2nd Deterministic Doping Workshop, Nov. 12, 2010, UC Berkley, USA. [invited]

  7. Y. Shimizu, H. Takamizawa, K. Inoue, T. Toyama,Y. Nagai, N. Okada, M. Kato, H. Uchida, F. Yano, T. Tsunomura, A. Nishida, T. Mogami: “Influence of carbon co-implantation on boron profile in silicon studied by laser-assisted atom probe tomography”, Materials Research Society Fall Meeting 2010, Nov. 29- Dec. 3, 2010, Boston, Massachusetts, USA. [poster] (12/2)

  8. H. Takamizawa, K. Inoue, Y. Shimizu, T. Toyama, Y. Nagai, N. Okada, M. Kato, H. Uchida, F. Yano, T. Tsunomura, A. Nishida, T. Mogami: “Three-dimensional dopant distributions in patterned MOSFETs studied by laser-assisted atom probe tomography”, Materials Research Society Fall Meeting 2010, Nov. 29- Dec. 3, 2010, Boston, Massachusetts, USA. [poster] (12/2)


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- 2009 -

  1. M. Hasegawa, Y. Nagai, T. Toyama, K. Inoue, Z. Tang, J. Yang, A. Almazouzi, E. Van Walle, R. Gerard, Y. Nishiyama, M. Suzuki, T. Ohkubo: “Positron and the Other Methods for Nasnostructural Studies of Nuclear Reactor Materials”, ICPA-15, Jan. 18-23, 2009, Kolkata, India. [invited] (1/22)

  2. K. Inoue, T. Takeuchi, H. Takamizawa, Y. Nagai, M. Hasegawa, I. Yonenaga: “Annealing behavior of Vacancy-type defects in electron-irradiated SixGe1-x bulk crystals at low temperature”, ICPA-15, Jan. 18-23, 2009, Kolkata, India. 第15回陽電子消滅国際会議ポスター賞

  3. T. Toyama, K. Inoue, M. Hatakeyama, Y. Nagai, M. Hasegawa: “Temperature dependence of positron lifetime and coincidence Doppler broadening on neutron-irradiated Fe-Cu and Fe-Cu-Mn model alloys of nuclear reactor pressure vessel steels”, ICPA-15, Jan. 18-23, 2009, Kolkata, India.

  4. T. Toyama, Y. Nagai, K. Inoue, Z. Tang, M. Hasegawa, A. Abderrahim, E. van Walle, R. Gerard: “State-of-the-art Positron Annihilation Techniques to Study Embedded Nano-Clusters in Metals”, TMS2009, Feb. 15-19, 2009, San Francisco, USA. [invited] (2/16)

  5. T. Toyama, M. Hatakeyama, K. Inoue, Y. Nagai, M. Hasegawa: “Temperature dependency of positron trapping at Irradiation-induced defects in Fe-Cu(-Mn) model alloys”, IGRDM-15, Oct.12-16, 2009, Budapest, Hungary.(Speaker:M.Hasegawa)(10/12)

  6. T. Toyama, Y. Nagai, N. Tsuchiya, M. Hasegawa, T. Ohkubo, A. Almazouzi, E. van Walle, R. Gerard: “Post irradiation annealing of a surveillance test specimen of Dole-4 reactor in Belgium studied by LEAP and positron annihilation”, IGRDM-15, Oct.12-16, 2009, Budapest, Hungary. (10/12)

  7. Y. Nagai, T. Toyama, N. Tsuchiya, A. Almazouzi, M. Hasegawa, E. van Walle, R. Gerard: “Microstructural change of grain boundary segregation and carbides in Doel-4 surveillance specimens”, IGRDM-15, Oct.12-16, 2009, Budapest, Hungary. (10/12)


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