Presentation (international)
[Oral]
[Poster]
[Collaboration]
[Press]
[Oral presentation]
Generation mechanism of dislocations during cast growth of high-performance multicrystalline Si ingots
Y. Ohno, H. Yoshida, T. Yokoi, K. Yamakoshi, T. Kojima, K. Kutsukake, H. Tanaka, X. Liu, K. Matsunaga, H. Kudo, K. Inoue, Y. Nagai, N. Usami
Materials Research Society (MRS) 2022 Fall Meeting, 11/27-12/2 2022, Boston, USA. (Highlight of Conference)
Dislocation generation via the formation of higher-order twin boundaries in mono-cast silicon
Y. Ohno, K. Yamakoshi, T. Kojima, H. Yoshida, P. Krenckel, S. Riepe, K. Inoue, Y. Nagai, N. Usami
33rd International Photovoltaic Science and Engineering Conference (PVSEC-33), 11/13-17 2022, Nagoya, Japan. Multiscale analysis of dislocation generation at °3 grain boundaries during cast growth of high-performance multicrystalline Si ingots
Y. Ohno, H. Yoshida, T. Yokoi, K. Yamakoshi, T. Kojima, K. Kutsukake, H. Tanaka, X. Liu, K. Matsunaga, H. Kudo, K. Inoue, Y. Nagai, N. Usami
19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XIX), 8/29-9/1 2022 (online). Precise analysis of segregation sites for As dopants at Si grain boundaries
Y. Ohno, T. Yokoi, Y. Shimizu, J. Ren, K. Inoue, Y. Nagai, K. Kutsukake, K. Fujiwara, A. Nakamura, K. Matsunaga, H. Yoshida
Materials Research Meeting (MRM) 2021, 12/13-17 2021, Yokohama, Japan. Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature
Y. Ohno, J. Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa
7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2021), 10/5-7 2021 (online). Precise characterization of segregation sites for oxygen impurities at grain boundaries in silicon
Y. Ohno, J. Ren, S. Tanaka, M. Kohyama, K. Inoue, Y. Shimizu, Y. Nagai, H. Yoshida
European Materials Research Society (EMRS) 2021 Spring Meeting, 5/31-6/4 2021 (online). Twin formation from lineages during Czochralski-growth of LiTaO3 ingots
Y. Ohno, Y. Kubouchi, H. Yoshida, T. Kochiya, T. Kajigaya
8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), 3/1-4 2021 (online). Formation process of high thermal-stability diamond/Si and diamond/GaAs heterointerfaces by surface activated bonding
Y. Ohno, J. Liang, Y. Shimizu, H. Yoshida, N. Shigekawa
Materials Research Society (MRS) 2020 Fall Meeting, 11/28-12/4 2020 (online). Microscopic picture of direct bonding via surface activation for low-resistance Si/wide-gap semiconductor heterointerfaces
Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, R. Miyagawa, Y. Shimizu, Y. Nagai
Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME) 2020, 10/4-9 2020 (online). What is the dislocation sources in the growth of high-performance multicrystalline Si ingots?
Y. Ohno, K. Tajima, K. Kutsukake, N. Usami
37th European PV Solar Energy Conference and Exhibition (EU PVSC), 9/7-11 2020 (online). Atomistic structure of Si/GaAs heterointerfaces fabricated by surface activated bonding revealed by STEM combined with low-temperature FIB
Y. Ohno, Y. Shimizu, Y. Nagai, R. Aso, N. Kamiuchi, H. Yoshida, J. Liang, N. Shigekawa
Materials Research Society (MRS) 2019 Fall Meeting, 12/1-6 2019, Boston, USA. Oxygen segregation at imperfect low-° tilt boundaries in Si for solar cells
Y. Ohno, T. Tamaoka, H. Yoshida, S. Takeda, Y. Shimizu, Y. Nagai, K. Kutsukake
18th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP XVIII), 9/8-12 2019, Berlin, Germany. Multi-scale analysis of dislocation generation during the cast-growth of high-performance multicrystalline Si ingots by using PL imaging and TEM
Y. Ohno, K. Tajima, N. Usami, K. Kutsukake
18th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP XVIII), 9/8-12 2019, Berlin, Germany. Compositional nanoanalysis at grain boundaries in Si by atom probe tomography combined with FIB operated at low temperatures
Y. Ohno, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, N. Kamiuchi, R. Aso, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
Europian Conference and Exhibition on Advanced Material and Processed (EUROMAT2019), 9/1-5 2019, Stockholm, Sweden. Characterization of lineages in Czochralski-grown LiTaO3 ingots by differential interference contrast microscopy of dislocation etch pits
Y. Ohno, Y. Kubouchi, T. Kajigaya
19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 7/28-8/2 2019, Keystone, CO, USA. Impact of misorientation at symmetric grain boundaries on segregation ability; for °3{111} tilt boundaries in Si
Y. Ohno, K. Kutsukake, T. Tamaoka, S. Takeda, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, N. Usami
Intergranular and Interphase Boundaries in Materials 2019 (IIB2019), 7/1-5 2019, Paris, France. (invited)
Impact of asymmetric grain boundaries on conversion efficiency in Si solar cells
Y. Ohno
Collaborative conference on Materials Research 2019 (CCMR-2019), 6/3-7 2019, Kintex, Korea. Chemical nanoanalysis at Si grain boundaries by atom probe tomography combined with FIB operated at low temperatures
Y. Ohno, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, J. Liang, N. Shigekawa
European Materials Research Society (EMRS) 2019 Spring Meeting, 5/26-31 2019, Nice, France. (Best Presentation Award)
Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature
Y. Ohno, R. Miyagawa, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019), 5/21-25 2019, Kanazawa, Japan. Two-dimensional polymorphic °{111}/{115} grain boundaries in Si - Atomistic structure and impurity segregation ability -
Y. Ohno, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai
Materials Research Society (MRS) 2019 Spring Meeting , 4/22-26 2019, Phoenix, USA. Two-dimensional polymorphic structure on °{111}/{115} grain boundaries in Si
Y. Ohno, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai
21st International Conference on Microscopy of Semiconducting Materials (MSM-XXI) , 4/9-12 2019, Cambridge, UK. (invited, keynote)
Chemical nanoanalysis of Si grain boundaries towards the fabrication of high-functional Si
solar cells
Y. Ohno
5th International Conference on Theoretical, Materials and Condenced Matter Physics, 11/26-28 2018, Los Angeles, USA. Stability of Na atoms at stacking faults in Si depending on the Fermi level
Y. Ohno, H. Morito, K. Kutsukake, I. Yonenaga, T. Yokoi, A. Nakamura, K. Matsunaga
Materials Research Society (MRS) 2018 Fall Meeting, 11/25-30 2018, Boston, USA. (invited)
Chemical nanoanalyses at grain boundaries by atom probe tomography with TEM and ab-initio calculations
Y. Ohno
BIT's 8th Annual World Congress of Nano Science & Technology-2018 (Nano S&T-2018), 10/24-26 2018, Potsdam, Germany. Chemical nanoanalyses at grain boundaries by joint use of scanning transmission electron microscopy and atom probe tomography
Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Americas International Meeting on Electrochemistry and Solid State Science 2018 (AiMES2018), 9/30-10/4 2018, Cancun, Mexico. Atomistic structure of low-resistance Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
Americas International Meeting on Electrochemistry and Solid State Science 2018 (AiMES2018), 9/30-10/4 2018, Cancun, Mexico. Growth mechanism of polymorphism of asymmetric °9{115}/{111} interfaces in silicon
Y. Ohno, T. Yokoi, A. Nakamura, K. Matsunaga, H. Yoshida, S. Takeda, Y. Shimizu, Y. Nagai
34th International Conference on the Physics of Semiconductors (ICPS2018), 7/29-8/3 2018, Montpellier, France. Structural bistability in °9{111}/{115} asymmetric grain boundary in Si ingots
Y. Ohno, T. Yokoi, A. Nakamura, K. Matsunaga, H. Yoshida, S. Takeda, Y. Shimizu, Y. Nagai
Extended Defects in Semiconductors (EDS) 2018, 6/24-29 2018, Thessaloniki, Greece. Interaction of Na atoms with stacking faults in Si with different Fermi levels
Y. Ohno, H. Morito, I. Yonenaga, T. Yokoi, A. Nakamura, K. Matsunaga
Extended Defects in Semiconductors (EDS) 2018, 6/24-29 2018, Thessaloniki, Greece. (invited)
Grain boundary segregation in silicon: nanoscopic mechanism and applications
Y. Ohno
International Conference on Condensed-Matter and Material Science (ICCMS2018), 6/20-21 2018, Kuala Lumpur, Malaysia. (invited)
Atom probe and STEM nanoanalysis of grain boundary segregation in Si
Y. Ohno
14th International Conference on Beam Injection Assessment of Microstructures in Semiconductors (BIAMS2018), 6/18-21 2018, Seoul, Korea. Interaction of sodium atoms with stacking faults in silicon crystals with different doping levels
Y. Ohno, H. Morito, K. Kutsukake, I. Yonenaga
10th International Workshop on Crystalline Silicon for Solar Cells (CSSC-10), 4/8-11 2018, Sendai, Japan. (invited)
Structural properties of low-resistance Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
Y. Ohno
Energy, Materials, and Nanotechnology (EMN) Photovoltaics Meeting 2018, 1/15-19 2018, Singapore. Polymorphism of asymmetric °9{111}/{115} interfaces in silicon
Y. Ohno, K. Kutsukake, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga
Materials Research Society (MRS) 2017 Fall Meeting , 11/26-12/1 2017, Boston, USA. Origin of the resistance at Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
Materials Research Society (MRS) 2017 Fall Meeting , 11/26-12/1 2017, Boston, USA. Mechanism of oxygen segregation at tilt boundaries in Si
Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
29th International Conference on Defects in Semiconductors (ICDS2017), 7/31-8/4 2017, Matsue, Japan. Chemical nanoanalyses at grain boundaries by joint use of atom probe tomography and TEM combined with ab-initio calculations
Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Analytical techniques for precise characterization of nano materials (ALTECH 2017) in European Materials Research Society (EMRS) Spring Meeting, 5/21-26 2017, Strasbourg, France. Atomistic structure of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature
Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
European Materials Research Society (EMRS) Spring Meeting, 5/21-26 2017, Strasbourg, France. Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature
Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
2017 5th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2017), 5/16-18 2017, Tokyo, Japan. Structural properties of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature
Y. Ohno, J. Liang, N. Shigekawa
Materials Research Society (MRS) 2017 Spring Meeting , 4/17-21 2017, Phoenix, USA. Dislocations on °5{013} grain boundaries in mono-cast Si; atomistic structure and effects on mechanical properties
Y. Ohno, K. Kutsukake, M. Deura, I. Yonenaga, H. Yoshida, S. Takeda, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai
Materials Research Society (MRS) 2017 Spring Meeting , 4/17-21 2017, Phoenix, USA. (invited)
Grain boundary segregation in Si studied by atom probe tomography combined with TEM and ab-initio calculations
Y. Ohno
20th International Conference on Microscopy of Semiconducting Materials (MSM-XX), 4/9-14 2017, Oxford, UK. Segregation ability of oxygen and carbon atoms at large-angle grain boundaries in Si
Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
9th International Workshop on Crystalline Silicon for Solar Cells (CSSC-9) & 3rd Silicon Materials Joint Workshop , 10/10-12 2016, Tempe, AZ, USA. Nanoscopic segregation ability of large-angle tilt boundaries in Si
Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Extended Defects in Semiconductors (EDS) 2016, 9/25-29 2016, Les Issambres, France. (invited)
Three-dimensional evaluation of segregation ability at grain boundaries in Si by atom probe tomography combined with transmission electron microscopy
Y. Ohno
European Materials Research Society (EMRS) 2016 Spring Meeting, 5/2-6 2016, Lille, France. Nanoscopic mechanism of impurity segregation at grain boundaries in silicon
Y. Ohno, K. Inoue, S. Ninomiya, K. Kutsukake, K. Fujiwara, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Materials Research Society (MRS) 2016 Spring Meeting , 3/28-4/1 2016, Phoenix, USA. (invited)
Impurity segregation at small angle tilt boundaries in silicon: nanoscopic mechanisms and applications
Y. Ohno
Energy, Materials, and Nanotechnology (EMN) Photovoltaics Meeting 2016, 1/18-21 2016, Hong Kong, China. Metal silicide epilayers self-organized at grain boundaries in silicon
Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, Y. Nagai
2nd East-Asia Microscopy Conference (EAMC2), 11/24-27 2015, Himeji, Japan. Formation process of Cu precipitates at small-angle tilt boundaries in Si crystals
Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, Y. Nagai
28th International Conference on Defects in Semiconductors (ICDS2015), 7/27-31 2015, Espoo, Finland. Accumulation of oxygen atoms at small-angle tilt boundaries in silicon
Y. Ohno, K. Inoue, K. Fujiwara, M. Deura, K. Kutsukake, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai
8th International Workshop on Crystalline Silicon Solar Cells (CSSC8), 5/5-8 2015, Bamberg, Bavaria, Germany. Effects of bond distortions on impurity segregation in high-angle grain boundaries in silicon
Y. Ohno, K. Inoue, M. Deura, K. Kutsukake, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Materials Research Society (MRS) 2015 Spring Meeting , 4/6-10 2015, San Francisco, USA. Interactions of impurity atoms with °3{111} and °9{114} grain boundaries in silicon
Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Extended Defects in Semiconductors (EDS) 2014, 9/14-19 2014, Gottingen, Germany. Three-dimensional impurity distribution at sigma-3{111} grain boundaries in Si by atom probe tomography combined with transmission electron microscopy
Y. Ohno, K. Inoue, Y. Tokumoto, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda
12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12), 11/04-08 2013, Tsukuba, Japan. 3D evaluation of gettering ability of sigma-3{111} grain boundaries
Y. Ohno, K. Inoue, Y. Tokumoto, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda
7th International Workshop on Crystalline Silicon Solar Cells (CSSC7), 10/22-10/25 2013, Fukuoka, Japan. Slip systems in wurtzite ZnO single crystals at elevated temperatures
Y. Ohno, H. Koizumi, Y. Tokumoto, K. Kutsukake, H. Taneichi, I. Yonenaga
19th American conference on crystal growth and epitaxy (ACCGE19), 7/21-26 2013, Keystone, USA. Formation of striaes in <0-441>-oriented CZ-LiNbO3 single crystal
Y. Ohno, K. Kutsukake, Y. Tokumoto, I. Yonenaga, T. Taishi, N. Bamba
19th American conference on crystal growth and epitaxy (ACCGE19), 7/21-26 2013, Keystone, USA. Precipitation behaviour of Cu in CZ-Si crystals heavily doped with p-type dopant
Y. Ohno, K. Inoue, K. Kutsukake, Y. Tokumoto, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, S.R. Nishitani
19th American conference on crystal growth and epitaxy (ACCGE19), 7/21-26 2013, Keystone, USA. In-situ near-field photo-excitation under transmission electron microscopy
Y. Ohno and I. Yonenaga
European Materials Research Society (EMRS) 2013 Spring Meeting, 5/27-31 2013, Strasbourg, France. Development of an apparatus for in-situ near-field photo-excitation in TEM
Y. Ohno
International Union of Materials Research Societies - International Conference on Electronic Materials 2012, 9/23-28 2012, Yokohama, Japan. (invited)
Revisiting radiation-enhanced dislocation glide with recent studies on 4H-SiC
Y. Ohno, K. Maeda
International Conference on Extended Defects in Semiconductors (EDS) 2012, 6/24-29 2012, Thessaloniki, Greece. Formation of BCC-Cu3Si in CZ-Si
Y. Ohno, T. Ohsawa, K. Inoue, K. Kutsukake, Y. Tokumoto, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, S. R. Nishitani
International Conference on Extended Defects in Semiconductors (EDS) 2012, 6/24-29 2012, Thessaloniki, Greece. Interaction energy of n-type dopant atoms with stacking faults in Si
Y. Ohno, Y. Tokumoto, I. Yonenaga, R. Taniguchi, S. R. Nishitani
International Conference on Extended Defects in Semiconductors (EDS) 2012, 6/24-29 2012, Thessaloniki, Greece. Optical properties of prismatic dislocations in ZnO
Y. Ohno, Y. Tokumoto, I. Yonenaga, K. Fujii, T. Yao
International Conference on Extended Defects in Semiconductors (EDS) 2012, 6/24-29 2012, Thessaloniki, Greece. Optical properties of dislocations in wurtzite ZnO introduced at elevated temperatures
Y. Ohno, Y. Tokumoto, I. Yonenaga, K. Fujii, T. Yao
Materials Research Society (MRS) 2011 Fall Meeting, 11/28-12/2 2011, Boston, USA. Recombination activity of dislocations in wurtite ZnO introduced at elevated temperatures
Y. Ohno, Y. Tokumoto, I. Yonenaga, K. Fujii, T. Yao
26th International Conference on Defects in Semiconductors (ICDS26), 7/17-22 2011, Nelson, New Zealand. Dislocation levels acting as radiative recombination centers in compound semiconductors
Y. Ohno, I. Yonenaga
26th International Conference on Defects in Semiconductors (ICDS26), 7/17-22 2011, Nelson, New Zealand. Doping effects on the stacking fault energy in Czochralski-grown silicon
Y. Ohno, T. Taishi, Y. Tokumoto, I. Yonenaga
International Conference on Extended Defects in Semiconductors (EDS) 2010, 9/19-24 2010, Brighton, UK. Effects of n- and p-doping on the structural property of dislocations in Czochralski-grown silicon
Y. Ohno, T. Taishi, Y. Tokumoto, I. Yonenaga
European Materials Research Society (EMRS) 2010 Spring Meeting, 6/7-11 2010, Strasbourg, France. (invited)
In-situ analysis of optical properties of nanostructures in TEM
Y. Ohno
The 20th Frontiers of Electron Microscopy in Materials Science, 9/27-10/2 2009, Nagasaki, Japan. (invited)
Optical properties of semiconductor nanostructures and defects studied by transmission electron microscopy
Y. Ohno
5th Handai Nanoscience and Nanotechnology International Symposium, 9/1-3 2009, Osaka, Japan. Atomistic Structure of Dislocations in ZnO Revealed by Opto-TEM and PL Spectroscopy
Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T. Yao
2009 Electronic Materials Conference, 6/24-26 2009, University Park, USA. Electronic properties of dislocations in wurtzite ZnO single-crystals
Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T. Yao
European Materials Research Society (EMRS) 2009 Spring Meeting, 6/8-12 2009, Strasbourg, France. (invited)
In-situ analysis of opto-, electronic properties of defects in TEM observations
Y. Ohno
Extended defects in semiconductors 2008, 9/14-19 2008, Poitiers, France. (selected oral)
Dislocation-related energy levels in wurtzite ZnO
Y. Ohno, H. Koizumi, T. Taishi, K. Fujii, H. Goto, T. Yao, I. Yonenaga
The 4-th Asian Conference on Crystal Growth and Crystal Technology, 5/21-24 2008, Sendai, Japan. Optical properties of ZnO including fresh dislocations induced by plastic deformation
Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T. Yao
Materials Research Society 2007 Fall Meeting, 11/26-30 2007, Boston, USA. Formation of multiple nanoscale twin boundaries acting as twinning superlattice in AlGaAs epilayers
Y. Ohno, T. Taishi, I. Yonenaga, K. Shoda, S. Takeda
The 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, 11/11-15 2007, Tokyo, Japan. Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional STM
Y. Ohno, T. Taishi, I. Yonenaga, S. Takeda
24th International Conference on Defects in Semiconductors, 7/22-27 2007, Albuquerque, USA. Optical properties of twin boundaries in indirect gap AlGaAs
Y. Ohno, K. Shoda, S. Takeda, N. Yamamoto
15th International Conference on Microscopy of Semiconducting Materials, 4/2-5 2007, Cambridge, UK. Quantitative analysis of optical polarization in semiconductor nanostructures by polarized cathodoluminescence spectroscopy in a transmission electron microscope
Y. Ohno, S. Takeda
The 16th International Microscopy Congress, 9/3-8 2006, Sapporo, Japan. Microstructure and optical properties of ZnSe nanowires grown on .ZnSe(001) with Fe catalysts
Y. Ohno, T. Shirahama, S. Takeda, A. Ishizumi, Y. Kanemitsu
The 16th International Microscopy Congress, 9/3-8 2006, Sapporo, Japan. Formation mechanism of silicon surface manoholes
Y. Ohno, S. Takeda, T. Ichihashi, S. Iijima
The 16th International Microscopy Congress, 9/3-8 2006, Sapporo, Japan. Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures
Y. Ohno, T. Shirahama, S. Takeda, A. Ishizumi, Y. Kanemitsu
28th International Conference on the Physics of Semiconductors , 7/24-28 2006, Vienna, Austria. Atomistic structure of CuPt-ordered GaInP alloys revealed by XSTM and polarized CL spectroscopy in a TEM
Y. Ohno
23th International Conference on Defects in Semiconductors, 7/24-29 2005, Awaji, Japan. Microstructure of a CuPt-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy
Y. Ohno
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, 7/3-8 2005, Sapporo, Japan. Localized energy levels associated with dislocations in ZnSe revealed by polarized CL spectroscopy under light illumination
Y. Ohno, S. Takeda
14th International Conference on Microscopy of Semiconducting Materials, 4/11-14 2005, Oxford, UK. Formation mechanism of the pairs of stacking faults in pseudomorphic ZnSe epilayers on GaAs
Y. Ohno, N. Adachi, T. Shirahama, S. Takeda
13th International Conference on Microscopy of Semiconducting Materials, 3/31-4/3 2003, Cambridge, UK. Formation process of silicon surface nanoholes
Y. Ohno, S. Takeda
12th International Conference on Microscopy of Semiconducting Materials, 3/26-29 2001, Oxford, UK. Luminescence from self-organized quantum well structures in CuPt-ordered GaInP
Y. Ohno, S. Takeda
Materials Research Society 1999 Fall Meeting, 11/29-12/3 1999, Boston, USA. Optical properties of anti-phase boundaries and Frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope
Y. Ohno, S. Takeda
11th International Conference on Microscopy of Semiconducting Materials, 3/22-25 1999, Oxford, UK. Electron-irradiation-induced disordering of CuPt-ordered GaInP studied by TEM-mode optical spectroscopy
Y. Ohno, Y. Kawai, S. Takeda
10th Conference on Semiconducting and Insulating Materials, 6/1-5 1998, Berkeley, California, USA. Formation of electron-irradiation-induced defects in GaP and GaInP studied by TEM-mode cathodoluminescence method
Y. Ohno, Y. Kawai, S. Takeda
Scanning Microscopy 1997 Meeting, 5/10-15 1997, Chicago, USA. In-situ TEM-PL study of lattice defects in CVD-diamond
Y. Ohno, S. Takeda, M. Hirata
13th International Congress on Electron Microscopy, 7/17-22 1994, Paris,@France.
[Poster presentation]
Grain boundary segregation of arsenic dopants in silicon crystal revealed by atom probe tomography combined with low-temperature focused ion beam
Y. Ohno, Y. Shimizu, K. Inoue, Y. Nagai, T. Yokoi, A. Nakamura, K. Matsunaga, H. Yoshida
Summit of Materials Science 2022 (SMS2022), 3/2-3 2022, Sendai, Japan. Twinning at lineages accompanied with cracking in Czochralski-grown LiTaO3 ingots
Y. Ohno, T. Kajigaya, K. Osako, T. Kochiya
22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22), 8/2-4 2021 (online). Segregation mechanism of arsenic dopants at Si grain boundaries
Y. Ohno, T. Yokoi, Y. Shimizu, J. Ren, K. Inoue, Y. Nagai, K. Kutsukake, K. Fujiwara, A. Nakamura, K. Matsunaga, H. Yoshida
31st International Conference on Defects in Semiconductors (ICDS31), 7/26-30 2021 (online). Triple junctions of random angle grain boundaries acting as dislocation sources in HP mc-Si ingots
Y. Ohno, K. Tajima, K. Kutsukake, N. Usami
30th International Photovoltaic Science and Engineering Conference (PVSEC-30), 11/8-13 2020 (online). Impact of misalignment of sigma-3 {111} grain boundaries on photovoltaic properties in Si
Y. Ohno, T. Tamaoka, H. Yoshida, Y. Shimizu, N. Ebisawa, Y. Nagai, K. Kutsukake, N. Usami
30th International Photovoltaic Science and Engineering Conference (PVSEC-30), 11/8-13 2020 (online). Structural analysis of Si/diamond heterointerfaces fabricated by surface activated bonding using LT-FIB and STEM
Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, Y. Shimizu, Y. Nagai
Global Institute for Materials Research Tohoku Joint International Symposium on Radiation Effects in Materials and Actinide Science 2020 (GIMRT-REMAS2020), 9/30-10/3 2020 (online). How to fabricate low-resistance heterointerfaces for tandem cells by direct bonding at low temperatures
Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, R. Miyagawa, Y. Shimizu, Y. Nagai
37th European PV Solar Energy Conference and Exhibition (EU-PVSC), 9/7-11 2020 (online). Structural properties of triple junctions acting as dislocation sources in high-performance Si ingots
Y. Ohno, K. Tajima, K. Kutsukake, N. Usami
47th IEEE Photovoltaic Specialists Conference (PVSC), 6/15-8/21 2020 (online). Impurity segregation at misoriented °3{111} tilt boundariess in high-performance Si
Y. Ohno, T. Tamaoka, H. Yoshida, S. Takeda, Y. Shimizu, Y. Nagai, K. Kutsukake
19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 7/28-8/2 2019, Keystone, CO, USA. Structural variety and segregation ability of °9 grain boundaries in Si
Y. Ohno, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai
30th International Conference on Defects in Semiconductors (ICDS30), 7/21-26 2019, Seattle, WA, USA. Impact of focused ion beam in the structural analysis of semiconductor interfaces fabricated by surface activated bonding
Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, N. Ebisawa, Y. Nagai, J. Liang, N. Shigekawa
30th International Conference on Defects in Semiconductors (ICDS30), 7/21-26 2019, Seattle, WA, USA. Impact of polymorphic nanostructures at grain boundaries on segregation ability; for asymmetric °9{111}/{115} tilt boundaries in silicon
Y. Ohno, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga
Intergranular and Interphase Boundaries in Materials 2019 (IIB2019), 7/1-5 2019, Paris, France. Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam
Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, N. Ebisawa, Y. Nagai, J. Liang, N. Shigekawa
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019), 5/21-25 2019, Kanazawa, Japan. Recombination activity of inclined °3{111} grain boundaries in high-performance Si ingots
Y. Ohno, K. Kutsukake, T. Tamaoka, S. Takeda, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, N. Usami
Materials Research Society 2018 Fall Meeting, 11/25-30 2018, Boston, USA. Chemical nanoanalysis at Si grain boundaries by atom probe tomography combined with STEM and ab-initio calculations
Y. Ohno, K. Kutsukake, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga
8th Forum on the Science and Technology of Silicon Materials 2018, 11/18-21 2018, Okayama, Japan. Recombination activity of inclined °3{111} asymmetric grain boundaries in high-performance Si ingots
Y. Ohno, K. Kutsukake, T. Tamaoka, S. Takeda, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, N. Usami
8th Forum on the Science and Technology of Silicon Materials 2018, 11/18-21 2018, Okayama, Japan. Mechanism of oxygen segregation in multicrystalline silicon
Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, T. Yokoi, K. Nakamura, K. Matsunaga, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
10th International Workshop on Crystalline Silicon for Solar Cells (CSSC-10), 4/8-11 2018, Sendai, Japan. Grain boundary segregation of nickel, copper, and oxygen atoms in a mono-like Si crystal
Y. Ohno, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, S. Takeda
9th International Workshop on Crystalline Silicon for Solar Cells (CSSC-9) & 3rd Silicon Materials Joint Workshop , 10/10-12 2016, Tempe, AZ, USA. Segregation mechanism at small angle tilt boundaries in Si
Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani
Extended Defects in Semiconductors 2016, 9/25-29 2016, Les Issambres, France. Segregation abilities of large-angle tilt boundaries in silicon
Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Summit of Materials Science 2016 (SMS2016), 5/18-20 2016, Sendai, Japan. Self-organization of metal silicide epilayers at grain boundaries in silicon
Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. Nishitani, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai
Materials Research Society 2016 Spring Meeting , 3/28-4/1 2016, Phoenix, USA. Nanoscopic segregation mechanism of impurity atoms at °9{114} grain boundaries in silicon crystals
Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
28th International Conference on Defects in Semiconductors (ICDS2015), 7/27-31 2015, Espoo, Finland. Near-field light probe towards in-situ Raman spectroscopy under transmission electron microscopy
Y. Ohno, I. Yonenaga
28th International Conference on Defects in Semiconductors (ICDS2015), 7/27-31 2015, Espoo, Finland. Copper accumulation mechanism at small-angle tilt boundaries in silicon
Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, Y. Nagai
8th International Workshop on Crystalline Silicon Solar Cells (CSSC8), 5/5-8 2015, Bamberg, Bavaria, Germany. Development of a small light probe towards in-situ near-field Raman spectroscopy under transmission electron microscopy
Y. Ohno, I. Yonenaga
Extended Defects in Semiconductors 2014, 9/14-19 2014, Gottingen, Germany. Three-dimensional impurity distribution at sigma-3 and sigma- 9 grain boundaries in silicon
Y. Ohno, K. Inoue, S. Ninomiya, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai
European Materials Research Society 2014 Spring Meeting, 5/26-30 2014, Lille, France. Microstructure of striae in Czochralski-grown <0441>-oriented LiNbO3
Y. Ohno, K. Kutsukake, Y. Tokumoto, I. Yonenaga, T. Taishi, N. Bamba
12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12), 11/04-08 2013, Tsukuba, Japan. Cu precipitation in CZ-Si crystals heavily doped with p-type dopant
Y. Ohno, K. Inoue, K. Kutsukake, Y. Tokumoto, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, S.R. Nishitani
12th Asia Pacific Physics Conference, 7/14-19 2013, Chiba, Japan. Development of an apparatus for in-situ near-field optical measurements in TEM
Y. Ohno, I. Yonenaga
18th International Conference on Microscopy of Semiconducting Materials, 4/7-11 2013, Oxford, UK. Optical properties of edge dislocations on {1-100} prismatic planes in ZnO introduced at elevated temperatures
Y. Ohno, Y. Tokumoto, K. Kutsukake, I. Yonenaga, K. Fujii, T. Yao
Summit of Materials Science 2012 (SMS2012), 11/27-30 2012, Sendai, Japan. Interaction energy of dopant atoms with stacking faults in Si crystals
Y. Ohno, Y. Tokumoto, K. Kutsukake, I. Yonenaga, R. Taniguchi, S. R. Nishitani
Summit of Materials Science 2012 (SMS2012), 11/27-30 2012, Sendai, Japan. BCC-Cu3Si formed in Si
Y. Ohno, T. Ohsawa, K. Inoue, K. Kutsukake, Y. Tokumoto, I. Yonenaga, Y. Shimizu, H. Takamizawa, Y. Nagai, H. Yoshida, S. Takeda, R. Taniguchi, S. R. Nishitani
Summit of Materials Science 2012 (SMS2012), 11/27-30 2012, Sendai, Japan. Optical properties of dislocations on prismatic planes in ZnO
Y. Ohno, Y. Tokumoto, I. Yonenaga, K. Fujii, T. Yao
Dislocations 2012, 8/27-31 2012, Budapest, Hungary. Interaction energy of dopant atoms with stacking faults in Si
Y. Ohno, Y. Tokumoto, I. Yonenaga, K. Togase, S. R. Nishitani
European Materials Research Society 2012 Spring Meeting, 5/14-18 2012, Strasbourg, France. Doping effects on the stability of sigma-3 interfaces in Czochralski-grown silicon crystals
Y. Ohno, Y. Tokumoto, I. Yonenaga
7th International Conference on Si Epitaxy and Heterostructures, 8/28-9/2 2011, Leuven, Belgium. Interaction of dopant atoms with stacking faults in Si
Y. Ohno, Y. Tokumoto, H. Taneichi, I. Yonenaga, K. Togase, S. R. Nishitani
26th International Conference on Defects in Semiconductors, 7/17-22 2011, Nelson, New Zealand. Grown-in defects in CZ-Si heavily doped with B atoms
Y. Ohno, Y. Tokumoto, T. Ohsawa, K. Inoue, I. Yonenaga, K. Shoda, S. Ichikawa, R. Taniguchi, S. R. Nishitani
26th International Conference on Defects in Semiconductors, 7/17-22 2011, Nelson, New Zealand. Doping effects on the stability of sigma-3 interfaces in silicon crystals
Y. Ohno, Y. Tokumoto, I. Yonenaga
European Materials Research Society 2011 Spring Meeting, 5/9-13 2011, Nice, France. Energy levels of dislocations in h-GaN and h-ZnO
Y. Ohno, T. Taishi, Y. Tokumoto, I. Yonenaga
International Conference on Extended Defects in Semiconductors 2010, 9/19-24 2010, Brighton, UK. Structural characteristics of dislocations in heavily phosphorus-doped silicon
Y. Ohno, T. Shirakawa, T. Taishi, I. Yonenaga
25th International Conference on Defects in Semiconductors, 7/20-24 2009, St. Petersburg, Russia. Unique defects in heavily boron-doped silicon single-crystals grown by Czochralski method
Y. Ohno, T. Taishi, I. Yonenaga
25th International Conference on Defects in Semiconductors, 7/20-24 2009, St. Petersburg, Russia. In-situ analysis of optical properties of dislocations in ZnO by opto-TEM
Y. Ohno, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T. Yao
25th International Conference on Defects in Semiconductors, 7/20-24 2009, St. Petersburg, Russia. Optical properties of dislocations in wurtzite ZnO single-crystals
Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T. Yao
Dislocations 2008, 10/13-17 2008, Hong Kong, China. Electronic Properties of Dislocations in wurtzite ZnO Bulk Single Crystals Freshly Induced by Plastic Deformation
Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T. Yao
Extended defects in semiconductors 2008, 9/14-19 2008, Poitiers, France. Electronic structure of a stacking fault in a commercial GaAs:Si wafer
Y. Ohno, T. Taishi, I. Yonenaga, S. Takeda
The 34th International Symposium on Compound Semiconductors, 10/15-18 2007, Kyoto, Japan. Multiple twin boundaries acting as superlattice in AlGaAs epilayers
Y. Ohno, N. Yamamoto, T. Taishi, I. Yonenaga, K. Shoda, S. Takeda
The 15th International Conference on Crystal Growth, 8/12-17 2007, Salt Lake City, USA. Low stacking fault areas in pseudomorphic ZnSe layers grown by photo molecular beam epitaxy
Y. Ohno, R. Hirai, S. Ichikawa, T. Taishi, I. Yonenaga, S. Takeda
The 15th International Conference on Crystal Growth, 8/12-17 2007, Salt Lake City, USA. Electronic properties of twin boundaries in AlGaAs
Y. Ohno, N. Yamamoto, T. Taishi, I. Yonenaga, K. Shoda, S. Takeda
24th International Conference on Defects in Semiconductors, 7/22-27 2007, Albuquerque, USA. Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy
Y. Ohno, R. Hirai, S. Ichikawa, T. Taishi, I. Yonenaga, S. Takeda
24th International Conference on Defects in Semiconductors, 7/22-27 2007, Albuquerque, USA. Atomistic structure of nanotwins in indirect-gap AlGaAs layers
Y. Ohno, N. Yamamoto, T. Taishi, I. Yonenaga, K. Shoda, S. Takeda
IMR Workshop on Advanced Materials, 3/1 2007, Sendai, Japan. Novel optical properties of twin boundaries in AlGaAs revealed by polarized cathodoluminescence spectroscopy in a transmission electron
microscope
Y. Ohno, K. Shoda, S. Takeda, N. Yamamoto
The 5th International Symposium on Atomic Level Characterization for New Materials and Devices, 12/4-8 2005, Hawaii, USA. Atomistic structure of spontaneously-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy and polarized cathodoluminescence spectroscopy
Y. Ohno, S. Takeda
14th International Conference on Microscopy of Semiconducting Materials, 4/11-14 2005, Oxford, UK. Formation and disappearance of stacking faults during epitaxial growth of ZnSe layers on GaAs
Y. Ohno
International Symposium on the Creation of Novel Nanomaterials, 1/20-22 2004, Osaka, Japan. Formation of nanoholes on Si surfaces by electron irradiation
Y. Ohno
International Symposium on the Creation of Novel Nanomaterials, 1/20-22 2004, Osaka, Japan. Quantitative analysis of linear polarization by means of polarized cathodoluminescence spectroscopy in a TEM
Y. Ohno, S. Takeda
13th International Conference on Microscopy of Semiconducting Materials, 3/31-4/3 2003, Cambridge, UK. Extension of stacking faults at low temperatures in a pseudomorphic ZnSe epilayer induced by laser illumination
Y. Ohno, S. Takeda
13th International Conference on Microscopy of Semiconducting Materials, 3/31-4/3 2003, Cambridge, UK. Fabrication of nanohole periodic multilayer structure on silicon surface
toward photonic crystal
Y. Ohno, S. Takeda
21th International Conference on Defects in Semiconductors, 7/26-30 2001, Giessen, Germany. Control of the arrangement of nanoholes on silicon surface
Y. Ohno, S. Takeda
Materials Research Society 2000 Fall Meeting, 11/27-12/1 2000, Boston, USA. Diffusion process of interstitial atoms in InP studied by transmission@electron microscopy
Y. Ohno, S. Takeda, M. Hirata
Materials Research Society 1996 Fall Meeting, 12/2-6 1996, Boston, USA. The clustering process of point defects in GaP studied by transmission@electron microscopy
Y. Ohno, S. Takeda, M. Hirata
18th International Conference on Defects in Semiconductors, 7/23-28 1995,@Sendai, Japan. HRTEM study of the {111} planar defect in heavily Si-doped GaAs
Y. Ohno, S. Takeda, S. Horiuchi
8th International Conference on Microscopy of Semiconducting Materials, 4/5-8 1993, Oxford, UK.
[Collaboration]
Characterization of GaN/GaN interfaces fabricated by surface-activated bonding
K. Sawai, J. liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2023), 3/5-9 2023, Gifu, Japan. Fabrication of high-thermal-stability GaN/diamond junctions via intermediate layers
J. Liang, Y. Ohno, N. Shigekawa,
International Conference on Wafer Bonding for Microsystems, 3D-and Wafer Level Integration (WaferBond'22), 10/4-6 2022, Schmalkalden, Germany. Nano-structural and electro-thermal analyses of GaN/3C-SiC on-diamond HEMTs prepared by bonding-first process
R. Kagawa, K. Kawamura, Y. Sakaida, S. Ouchi, H. Uratani, Y. Shimizu, Y. Ohno,Y. Nagai, N. Shigekawa, J. Liang
14th Topical Workshop on Heterostructure Microelectronics (TWHM2022), 8/29-9/1 2022, Hiroshima, Japan. Thermal Annealing Effect on the Structure of GaN/Diamond Bonding Interface
K. Sawai, J. Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
15th International Conference on New Diamond and Nano Carbons 2022 (NDNC2022), 6/6-9 2022, Kanazawa, Japan. (Best Presentation Award)
Fabrication of Ga2O3/Si direct bonding interface for high power device applications
J. Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2021), 10/5-7 2021 (online). (Best Student Presentation Award)
Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device
R. Kagawa, K. Kawamura, Y. SakaidaCS. OuchiCH. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, J. Liang
7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2021), 10/5-7 2021 (online). Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding
K. Sawai, J. Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2021), 10/5-7 2021 (online). Nanostructural analysis of Al/ΐ-Ga2O3 interface fabricated using surface activated bonding
K. Sawai, J. Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2021), 10/5-7 2021 (online). Fabrication of Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation
H. Nagai, K. Kawamura, Y. Sakaida, H. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, J. Liang
7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2021), 10/5-7 2021 (online). Fabrication and characterization of GaN/Diamond bonding interface
A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang
7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2021), 10/5-7 2021 (online). (invited)
Multicrystalline informatics for high-performance crystals
N. Usami, T. Kojima, K. Kutsukake, X. Liu, H. Kudo, T. Matsumoto, T. Yokoi, Y. Shimizu, Y. Ohno
2021 International Conference on Solid State Devices and Materials (SSDM2021), 9/6-9 2021 (online). (invited)
Multicrystalline informatics: A methodology to realize high-performance crystals
N. Usami, T. Kojima, K. Kutsukake, X. Liu, H. Kudo, T. Matsumoto, T. Yokoi, Y. Shimizu, Y. Ohno
2nd International Symposium on Modeling of Crystal Growth Processes and Devices, 7/5-8 2021 (online). (invited)
Application of Machine Learning for High-performance Multicrystalline Materials
N. Usami, K. Kutsukake, T. Kojima, H. Kudo, T. Matsumoto, T. Yokoi, Y. Shimizu, Y. Ohno
239th ECS meeting, 5/30-6/3 2021 (online). Interfacial characterization of the diamond/GaAs direct bonding interfaces fabricated by surface activated bonding
Y. Nakamura, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, H. X. Wang, N. Shigekawa, J. Liang
14th International Conferene on New Diamond and Nano Carbons 2020 (NDNC2020),1/10-14 2021, Kanazawa, Japan. Interfacial characterization of GaN/diamondheterostructures prepared by room temperature bonding for high power deviceapplications
J. Liang, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, S. Kim, M. Kasu,M. Kuball, N. Shigekawa
13th Topical Workshop on HeterostructureMicroelectronics (TWHM 2019), 8/26-29 2019, Toyama, Japan. Fabrication of GaAs/diamond direct bonding for highpower device applications
Y. Nakamura, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, J. Liang
13th Topical Workshop on HeterostructureMicroelectronics (TWHM 2019), 8/26-29 2019, Toyama, Japan. (invited)
Direct bonding of diamond and dissimilar materials for power device applications
J. Liang, Y. Shimizu, Y. Ohno, N. Ebisawa, S. Kenji, Y. Nagai, M. Kasu, N. Shigekawa
2019 International Symposium on Single Crystal Diamond and Electronics (SCDE 2019), 6/9-12 2019, Xi'an , China. (Best Poster Presentation Award)
Fabrication of Diamond/Cu Direct Bonding for Power Device Application
S. Kanda, S. Masuya, M. Kasu, Y. Ohno, Y. Shimizu, N. Shigekawa, J. Liang
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019), 5/21-25 2019, Kanazawa, Japan. Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding
Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, Y. Nagai
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019), 5/21-25 2019, Kanazawa, Japan. Direct bonging of diamond and Cu at room temperature for power devise application
J. Liang, S. Kanda, S. Masuya, M. Kasu, Y. Ohno, Y. Shimizu, N. Shigekawa
13th New Diamond and Nano Carbons Conference (NDNC2019), 5/12-17 2019, Hualien, Taiwan. Impurity segregation at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography
Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, Y. Nagai
Materials Research Society 2018 Fall Meeting, 11/25-30 2018, Boston, USA. (invited)
Generation and propagation of defects in multicrystalline silicon for solar cells
K. Kutsukake, Y. Hayama, H. Kudo, T. Matsumoto, T. Yokoi, Y. Ohno, N. Usami
8th Forum on the Science and Technology of Silicon Materials 2018, 11/18-21 2018, Okayama, Japan. Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding
Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, Y. Nagai
Summit of Materials Science 2018, 10/29-30 2018, Sendai, Japan. First-principles study of dependence of impurity segregation on grain boundary character in silicon
T. Yokoi, Y. Ohno, A. Nakamura, K. Matsunaga
10th International Workshop on Crystalline Silicon for Solar Cells (CSSC-10), 4/8-11 2018, Sendai, Japan. (invited)
Materials and Process Informatics for SMART Silicon Ingot
N. Usami, Y. Hayama, T. Matsumoto, H. Kudo, T. Yokoi, K. Matsunaga, K. Kutsukake, Y. Ohno
2nd Asian Nations Joint Workshop on Photovoltaics, 11/4 2017, Shiga, Japan. TEM observation of femtosecond-laser-induced periodic structures on SiC substrates
R. Miyagawa, Y. Ohno, M. Deura, I. Yonenaga, O. Eryu
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), 9/17-22 2017, Washington, DC, USA. Mechanical properties of cubic-BN bulk single crystal evaluated by nanoindentation
M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taniguchi
12th International Conference on Nitride Semiconductors (ICNS-12), 7/24-28 2017, Strasbourg, France. (invited)
Grain boundaries in silicon crystals: Crystallographic interaction and dislocation generation during crystal growth
K. Kutsukake, Y. Ohno, M. Deura, I. Yonenaga
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 8/7-12 2016, Nagoya, Japan. Evaluation of mechanical properties for w-BN using nanoindentation
M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taniguchi
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 8/7-12 2016, Nagoya, Japan. Lattice parameter of heavily impurity doped Si
I. Yonenaga, R. Gotoh, K. Omote, K. Inoue, K. Kutsukake, M. Deura, Y. Ohno
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 8/7-12 2016, Nagoya, Japan. Enhanced diffusivity of Mn in heavily dislocated region of Si crystal
R. Gotoh, Y. Ohno, I. Yonenaga
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 8/7-12 2016, Nagoya, Japan. Abnormal diffusivity of oxygen in thermal-double-donor formation in Si
T. Yoshioka, M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 8/7-12 2016, Nagoya, Japan. Influence of grain boundaries on stress concentration in multicrystalline Si
S. Sugioka, K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), 8/7-12 2016, Nagoya, Japan. First principles calculations of solution energies of dopants around stacking faults in Ge crystal
K. Sakakibara, T. Fujioka, S. R. Nishitani, Y. Ohno, I. Yonenaga
9th Pacific Rim International COnference on Advanced Materials and Processing (PRICM9), 8/1-5 2016, Kyoto, Japan. Luminescence imaging through a spatially-resolved camera for defect characterization in silicon crystals
K. Kutsukake, M. Deura, Y. Ohno, and I. Yonenaga
Summit of Materials Science 2016 (SMS2016), 5/18-20 2016, Sendai, Japan. Evaluation of elastic properties of III-nitrides using nanoindentation
M. Deura, K. Kutsukake, Y. Ohno, and I. Yonenaga
Summit of Materials Science 2016 (SMS2016), 5/18-20 2016, Sendai, Japan. (invited)
Characterization of electrical properties of defects in multicrystalline silicon through photoluminescence imaging
K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
11th China SoG Silicon and PV Power Conference (CSPV11), 11/26-28 2015, Nantong, China. Quantitative analysis of electrical activity of grain boundaries through high spatial resolution photoluminescence imaging
K. Kutsukake, S. Ninomiya, M. Deura, Y. Ohno, N. Usami, I. Yonenaga
25th International Photovoltaic Science and Engineering Conference (PVSEC-25), 11/15-20 2015, Busan, Korea. Correlation between crystal quality and mechanical properties of InN
M. Deura, Y. Ohkubo, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
6th International Symposium on Growth of III-Nitrides (ISGN-6), 11/8-13 2015, Hamamatsu, Japan. Enhanced diffusion of Mn in heavily dislocated region of Si
R. Goto, Y. Ohno, I. Yonenaga
28th International Conference on Defects in Semiconductors (ICDS2015), 7/27-31 2015, Espoo, Finland. The impact of Sn-doping on formation of oxygen cluster in Ge crystal
K. Inoue, T. Taishi, Y. Murao, K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
28th International Conference on Defects in Semiconductors (ICDS2015), 7/27-31 2015, Espoo, Finland. Abnormal diffusivity of oxygen in Si at low temperatures
T. Yoshioka, M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga
28th International Conference on Defects in Semiconductors (ICDS2015), 7/27-31 2015, Espoo, Finland. Recombination characters of defects in PV-Si obtained by high resolution PL imaging
S. Ninomiya, K. Kutsukake, S. Sugioka, M. Deura, Y. Ohno, N. Usami, I. Yonenaga
28th International Conference on Defects in Semiconductors (ICDS2015), 7/27-31 2015, Espoo, Finland. (invited)
Defect engineering of multicrystalline and mono-like silicon solar cells: Characterization and control of grain boundaries and dislocations
K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, 7/26-29 2015, Keystone, USA. First principles calculations of solution energies of dopants around stacking faults in Si crystal
S. R. Nishitani, Y. Yamamoto, K. Togase, Y. Ohno, I. Yonenaga
International COnference on Computert coupling of Phase Diagrams and Thermochemistry, 5/31-6/5 2015, Loano, Italy. (invited)
Growth and characterization of silicon ingots for solar cells: conventional, mono-like and high-performance multicrystalline silicon
K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
The 5th Asia-Africa Sustanable Energy Forum , 5/10-13 2015, Tsukuba, Japan. Utilization of functional grain boundaries for mono-like Si for solar cells
K. Kutsukake, Y. Ohno, M. Deura, I. Yonenaga
Materials Research Society 2015 Spring Meeting , 4/6-10 2015, San Francisco, USA. Sn effects on thermal donor formation in Ge
K. Inoue, Y. Murao, T. Taishi, K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
Materials Research Society 2015 Spring Meeting , 4/6-10 2015, San Francisco, USA. The impression effect of Sn impurity on aggregation of interstitial oxygen in Ge crystal
K. Inoue, T. Taishi, Y. Murao, K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
2014 Annual Meeting of Excellent Graduate Schools for "Materials Integration Center" and "Materials Science Center" in conjunction with Russia-Japan Workshop "Advanced Materials Synthesis Process and Nanostructure", 3/9-10 2015, Sendai, Japan. Abnormally high diffusivity of oxygen atoms in Si at low temperatures: study of diffusion species
T. Yoshioka, M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga
2014 Annual Meeting of Excellent Graduate Schools for "Materials Integration Center" and "Materials Science Center" in conjunction with Russia-Japan Workshop "Advanced Materials Synthesis Process and Nanostructure", 3/9-10 2015, Sendai, Japan. Characterization of silicon ingots: mono-like vs. HP multicrystalline
K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
6th World Conference on Photovoltaic Energy Conversion, 11/23-27 2014, Kyoto, Japan. Correlation between PL intensity and dislocation density by using high spatial resolution measurement in a silicon crystal
S. Ninomiya, K. Kutsukake, Y. Ohno, M. Deura, N. Usami, I. Yonenaga
6th World Conference on Photovoltaic Energy Conversion, 11/23-27 2014, Kyoto, Japan. (invited)
Utilization of functional grain boundaryies for suppression of multi-crystallizartion of mono-like Si
K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
10th China SoG Silicon and PV Power Conference (CSPV10), 11/6-8 2014, Nantong, China. Dislocation moiblities in ductile to brittle temperature region in Si
I. Yonenaga, Y. Imoto, Y. Ohno, K. Kutsukake, M. Deura
Extended Defects in Semiconductors 2014, 9/14-19 2014, Gottingen, Germany. Characterization of electrical activity of dislocations in silicon by high spatial resolution PL imaging
S. Ninomiya, K. Kutsukake, M. Deura, Y. Ohno, N. Usami, I. Yonenaga
Extended Defects in Semiconductors 2014, 9/14-19 2014, Gottingen, Germany. Growth of mono-like silicon ingots using functionnal grain boundaries for solar cells
K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
ΔΆΒ\GlM[2014Ϋοc, 7/27-8/1 2014, Tokyo, Tokyo. Accurate measurement of segregation to grain boundaries or planar faults by analytical transmission electron microscopy
T. Walther, M. Hopkinson, N. Daneu, A. Recnik, Y. Ohno, K. Inoue, I. Yonenaga
European Materials Research Society 2014 Spring Meeting, 5/26-30 2014, Lille, France. Crystal growth of mono-like silicon ingot using functional grain boundaries
K. Kutsukake, Y. Ohno, M. Deura, I. Yonenaga, N. Usami
European Materials Research Society 2014 Spring Meeting, 5/26-30 2014, Lille, France. Infrared study of thermal donor in Ge crystal
K. Inoue, T. Taishi, Y. Murao, K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
European Materials Research Society 2014 Spring Meeting, 5/26-30 2014, Lille, France. Effect of Pb co-doping on Czochralski growth of heavily Al doped Si
K. Inoue, T. Taishi, Y. Murao, K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
2013 Excellent Grand Annual Meeting , 3/10-11 2014, Sendai, Japan. Dynamic properties of dislocations in Ge controlled by Fermi level
Y. Murao, T. Taishi, Y. Tokumoto, Y. Ohno, K. Kutsukake, K. Inoue, I. Yonenaga
Materials Research Society 2013 Fall Meeting , 12/1-6 2013, Boston, USA. Growth of mono-like silicon using functional grain boundaries
K. Kutsukake, Y. Ohno, N. Usami, I. Yonenaga
10th Materials Science School for Young Scientists and Students, 11/21-22 2013, Trust City Conference, {ι. In situ Observation of Dislocation Dynamics in AlN Films
Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
Electron Microscopy and Multiscale Modeling 2013 (EMMM2013, 11/10-14 2013, Kyoto, Japan. Suppression of multi-crystallization of mono-like Si by functional grain boundaries
K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, I. Yonenaga
23th Photovoltaic Science and Engineering Conference (PVSEC23), 10/28-11/1 2013, Taipei, Taiwan. Growth of 70kg mono-like Si ingots with functional grain boundaries
K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, I. Yonenaga
7th International Workshop on Crystalline Silicon Solar Cells (CSSC7), 10/22-25 2013, Fukuoka, Japan. Dislocation Dynamics in AlN Films
Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
9th TU-UT-SNU Student Workshop, 10/9-13 2013, Seoul, Republic of Korea. Characterization and simulation of electrical property of grain boundaries in multicrystalline silicon by electroluminescence imaging and finite element method
K. Kutsukake, N. Miyazaki, T. Sameshima, T. Tachibana, A. Ogura, Y. Tokumoto, Y. Ohno, N. Usami, I. Yonenaga
28th European PV Solar Energy Conference and Exhibition (EUPVSEC2013), 9/30-10/4 2013, Paris, France. Growth of heavily tin-doped Si
I. Yonenaga, T. Taishi, K. Inoue, R. Gotoh, K. Kutsukake, Y. Tokumoto, Y. Ohno
17th International Conference on Crystal Growth (ICCGE-17), 8/11-16 2013, Warsaw, Poland. X-ray topographic observation of dislocation generation and propagation in Czochralski-grown Si
I. Yonenaga, Y. Tokumoto, Y. Ohno, K. Kutsukake, R. Gotoh, K. Iniue
19th American conference on crystal growth and epitaxy, 7/21-26 2013, Keystone, USA. Dislocation mobilities in wide band-gap semiconductors
I. Yonenaga, Y. Ohno, Y. Tokumoto, K. Kutsukake
19th American conference on crystal growth and epitaxy, 7/21-26 2013, Keystone, USA. Bulk crystal growth of dilute GeSn
Y. Murao, T. Taishi, K. Kutsukake, Y. Tokumoto, Y. Ohno, I. Yonenaga
19th American conference on crystal growth and epitaxy, 7/21-26 2013, Keystone, USA. Growth of heavily indium doped Si
K. Inoue, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
19th American conference on crystal growth and epitaxy, 7/21-26 2013, Keystone, USA. Constitutional supercooling observed in As-doped Si grown by Czochralski method
T. Taishi, Y. Ohno, I. Yonenaga
19th American conference on crystal growth and epitaxy, 7/21-26 2013, Keystone, USA. Suppression of Multi-Crystallization in Mono-like Si for Solar Cells by Grain Boundary Engineering
K. Kutsukake, N. Usami,Y. Ohno, Y. Tokumoto, I. Yonenaga
19th American conference on crystal growth and epitaxy, 7/21-26 2013, Keystone, USA. Modification of dislocation properties in Si under high-magnetic field
I. Yonenaga, Y. Ohno, Y. Tokumoto, K. Kutsukake
12th Asia Pacific Physics Conference, 7/14-19 2013, Chiba, Japan. Formation kinetics of thermal double donor in Ge
K. Inoue, T. Taishi, Y. Murao, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
12th Asia Pacific Physics Conference, 7/14-19 2013, Chiba, Japan. Nanoindentation hardness and elastic modulus of AlGaN alloys
Y. Tokumoto, H. Taneichi, Y. Ohno, K. Kutsukake, H. Miyake, K. Hiramatsu, I. Yonenaga
10th Conference on Lasers and Electro-Optics Pacific Rim, 6/30-7/4 2013, Kyoto, Japan. (invited)
Grain Boundary Engineering for Mono-like Si
K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, I. Yonenaga
39th IEEE Photovoltaic Specialists Conference, 6/16-21 2013, Tampa, USA. First principles calculations of the solution energy of dopant in Si crystal with stacking fault
Y. Yamamoto, Y. Ohno, Y. Tokumoto, I. Yonenaga, S. R. Nishitani
International Conference on Computer Coupling of Phase Diagrams and Thermochemistry XLII (CALPHAD XLII), 5/26-31 2013, San Sebastian, Spain. Dislocation dynamics in AlN films induced by in situ TEM nanoindentation
Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
18th International Conference on Microscopy of Semiconducting Materials, 4/7-11 2013, Oxford, UK. Effects of impurities on dynamic properties of dislocations in germanium
Y. Murao, T. Taishi, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
Excellent Graduate Schools 2012 Annual Meeting in conjuction with Japan-Russia Workshop on Advanced Materials Synthesis Process and Nanostructure, 3/7-8 2013, Sendai, Japan. Formation of thermal double donor in germanium
K. Inoue, T. Taishi, Y. Tokumoto, y. Murao, K. Kutsukake, Y. Ohno, I. Yonenaga
Excellent Graduate Schools 2012 Annual Meeting in conjuction with Japan-Russia Workshop on Advanced Materials Synthesis Process and Nanostructure, 3/7-8 2013, Sendai, Japan. Grain boundary engineering of silicon crystal for solar cells
K. Kutsukake, Y. Ohno, Y. Tokumoto, N. Usami, I. Yonenaga
Summit of Materials Science 2012 (SMS2012), 11/27-30 2012, Sendai, Japan. Dislocation generation and propagation in AlN films induced by in situ TEM nanoindentation
Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
Summit of Materials Science 2012 (SMS2012), 11/27-30 2012, Sendai, Japan. Effects of O impurity on dislocation activity in Ge
Y. Murao, T. Taishi, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
Summit of Materials Science 2012 (SMS2012), 11/27-30 2012, Sendai, Japan. Infrared study of GeOx formation in heat-treatment of high purity germanium crystal
K. Inoue, T. Taishi, Y. Tokumoto, Y. Murao, K. Kutsukake, Y. Ohno, I. Yonenaga
Summit of Materials Science 2012 (SMS2012), 11/27-30 2012, Sendai, Japan. Growth of dilute GeSn alloys
Y. Murao, T. Taishi, K. Kutsukake, Y. Tokumoto, Y. Ohno1, I. Yonenaga
7th International Workshop on Modeling in Crystal Growth (IWMCG-7), 10/28-31 2012, Taipei, Taiwan. Propagation of nanoindentation-induced dislocations in AlN films
Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
International Workshop on Nitride Semiconductors 2012, 10/14-19 2012, Sapporo, Japan. A new mono-cast Si technique using functional grain boundaries
K. Kutsukake, Y. Ohno, Y. Tokumoto, N. Usami, I. Yonenaga
6th International Workshop on Crystalline Silicon Solar Cells, 10/8-11 2012, Aix-les-bains, France . Quantitative analysis of carrier recombination property at grain boundaries in multicrystalline silicon using micro-image of electroluminescence
K. Kutsukake, N. Miyazaki, T. Sameshima, T. Tachibana, A. Ogura, Y. Tokumoto, Y. Ohno, N. Usami, I. Yonenaga
27th European Photovoltaic Solar Energy Conference, 9/24-28 2012, Frankfurt, Germany. Dislocation Activities in Si under High-magnetic-field
I. Yonenaga, Y. Ohno, Y. Tokumoto, K. Kutsukake
Dislocations 2012, 8/27-31 2012, Budapest, Hungary. Dislocation-induced optical properties of wide gaps GaN and ZnO
I. Yonenaga, Y. Ohno, Y. Tokumoto
Dislocations 2012, 8/27-31 2012, Budapest, Hungary. Propagation of nanoindentation-induced dislocations in AlN films
Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
Dislocations 2012, 8/27-31 2012, Budapest, Hungary. Dislocation activities in Ge doped with neutral impurities
Y. Murao, Y. Ohno, Y. Tokumoto, K. Kutsukake, I. Yonenaga
Dislocations 2012, 8/27-31 2012, Budapest, Hungary. Propagation behavior of nanoindentation-induced dislocations in AlN films
Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
International Conference on Extended Defects in Semiconductors 2012, 6/24-29 2012, Thessaloniki, Greece. Morphology and microstructure of GeAs islands formed on Ge(111) surfaces
Y. Tokumoto, T. Taishi, K. Kutsukake, Y. Ohno, I. Yonenaga
International Conference on Extended Defects in Semiconductors 2012, 6/24-29 2012, Thessaloniki, Greece. Characterization of sigma-5 grain boundaries artificially formed in Si crystal by CZ, FZ and Bridgman growth methods
K. Kutsukake, K. Inoue, Y. Ohono, Y. Tokumoto, N. Usami, K. Nakajima, I. Yonenaga
International Conference on Extended Defects in Semiconductors 2012, 6/24-29 2012, Thessaloniki, Greece. Impurity-dependent dislocation dynamics in Ge
Y. Murao, T. Taishi, K. Kutsukake, Y. Tokumoto, Y. Ohno, I. Yonenaga
International Conference on Extended Defects in Semiconductors 2012, 6/24-29 2012, Thessaloniki, Greece. Dislocation locking and velocity dependent on impurities in Ge
Y. Murao, T. Taishi, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
European Materials Research Society 2012 Spring Meeting, 5/14-18 2012, Strasbourg, France. Oxygen precipitation in Czochralski-grown Germanium Crystals
K. Inoue, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taishi
European Materials Research Society 2012 Spring Meeting, 5/14-18 2012, Strasbourg, France. 2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on <113>-defect formation in Si
J. Vanhellemont, H. Yasuda, Y. Tokumoto, Y. Ohno, M. Suezawa, I. Yonenaga
European Materials Research Society 2012 Spring Meeting, 5/14-18 2012, Strasbourg, France. Morphology and microstructure of GeAs formed on Ge(111) surfaces
Y. Tokumoto, T. Taishi, K. Kutsukake, Y. Ohno, I. Yonenaga
International Symposium on Role of Electron Microscopy in Industry -Toward genuine collaboration between academiaand industry-, 1/19-20 2012, Nagoya, Japan. Dynamic interactions between impurities and dislocations in Ge crystals
Y. Murao, T. Taishi, Y. Ohno, Y. Tokumoto, K. KUtsukake, I. Yonenaga
International Symposium on Materials Integration (ASPT2011 & KINKEN-WAKATE 2011), 12/1-2 2011, Sendai, Japan. Dynamic properties of dislocations in impurity doped Ge crystals
Y. Murao, T. Taishi, Y. Tokumoto, Y. Ohno, I. Yonenaga
7th International Conference on Si Epitaxy and Heterostructures, 8/28-9/2 2011, Leuven, Belgium. Liquid boron-oxide encapsulated Czochralski-growth of Ge crystals
T. Taishi, H. Ise, Y. Tokumoto, Y. Ohno, I. Yonenaga
18th American Conference on Crystal Growth and Epitaxy, 7/24-8/5 2011, Monterey, USA. Orientation relationship in GaN buffer layer grown on r-sapphire
Y. Tokumoto, H.-J. Lee, Y. Ohno, T. Yao, I. Yonenaga
18th American Conference on Crystal Growth and Epitaxy, 7/24-8/5 2011, Monterey, USA. Modeling of incorporation of oxygen and carbon impurities into multi-crystalline silicon ingot during one-directional solidification
K. Kutsukake, H. Ise, Y. Tokumoto, Y. Ohno, K. Nakajima, I. Yonenaga
18th American Conference on Crystal Growth and Epitaxy, 7/24-8/5 2011, Monterey, USA. Doping effects for dislocation motion in Ge
I. Yonenaga, Y. Murao, T. Taishi, Y. Ohno, Y. Tokumoto
26th International Conference on Defects in Semiconductors, 7/17-22 2011, Nelson, New Zealand. Oxygen in B2O3 encapsulated Czochralski-grown Ge
T. Taishi, H. Ise, Y. Tokumoto, Y. Ohno, I. Yonenaga
26th International Conference on Defects in Semiconductors, 7/17-22 2011, Nelson, New Zealand. Microstructure of nonpolar GaN grown at low temperature
Y. Tokumoto, H. Lee, Y. Ohno, T. Yao, I. Yonenaga
26th International Conference on Defects in Semiconductors, 7/17-22 2011, Nelson, New Zealand. Modelling of incorporation of oxygen into multi-crystalline silicon during crystal growth
K. Kutsukake, H. Ise, Y. Tokumoto, Y. Ohno, K. Nakajima, I. Yonenaga
26th International Conference on Defects in Semiconductors, 7/17-22 2011, Nelson, New Zealand. First principles calculations of stacking fault energy of P doped Si crystal
S. R. Nishitani, K. Togase, Y. Ohno, Y. Tokumoto, I. Yonenaga
International Conference on Computer Coupling of Phase Diagrams and Thermochemistry XL (CALPHAD XL), 5/22-27 2011, Rio de Janeiro, Brazil. First principles calculations of the copper silicide precipitates
R. Taniguchi, S. R. Nishitani, Y. Ohno, I. Yonenaga
International Conference on Computer Coupling of Phase Diagrams and Thermochemistry XL (CALPHAD XL), 5/22-27 2011, Rio de Janeiro, Brazil. Crystallites with specific orientation in polycrystalline GaN buffer layer
Y. Tokumoto, H.J. Lee, Y. Ohno, T. Yao, I. Yonenaga
5th Asia-Pacific Workshop on Widegap Semiconductors (APWS), 5/22-26 2011, Toba, Japan. Preferential orientation for crystallites in polycrystalline GaN buffer layer
Y. Tokumoto, H.J. Lee, Y. Ohno, T. Yao, I. Yonenaga
European Materials Research Society 2011 Spring Meeting, 5/9-13 2011, Nice, France. (selected oral)
Czochralski growth of Ge crystal from the melt partially covered by B2O3 liquid for reduction of dislocation dnsity
T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
The Forum on the Science and Technology of Silicon Materilas 2010, 11/14-17 2010, Okayama, Japan. Ecvaluation of oxygen impurities in Ge crystals Czochralski-growm from melts partially or fully covered by B2O3 liquid
T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
The Forum on the Science and Technology of Silicon Materilas 2010, 11/14-17 2010, Okayama, Japan. Effects of phosphorus doping and annealing on dislocation structure in silicon
Y. Tokumoto, Y. Ohno, T. Taishi, I. Yonenaga
International Conference on Extended Defects in Semiconductors 2010, 9/19-24 2010, Brighton, UK. Oxygen-related defects in Czochralski germanium crystals grown using boron oxide
T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
International Conference on Extended Defects in Semiconductors 2010, 9/19-24 2010, Brighton, UK. Dislocation-impurity interaction in Ge
Y. Murao, Y. Ohno, T. Taishi, Y. Tokumoto, I. Yonenaga
International Conference on Extended Defects in Semiconductors 2010, 9/19-24 2010, Brighton, UK. Dislocation activities in Ge crystals
Y. Murao, Y. Ohno, T. Taishi, Y. Tokumoto, I. Yonenaga
ζ4ρkεΰ€/νεwήΏwΘwΆπ¬Z~i[, 8/26-27 2010, νεw, Ψ. Growth of oxygen-rich germanium crystals with low dislocation density
T. Taishi, H. Ise, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
European Materials Research Society 2010 Spring Meeting, 6/7-11 2010, Strasbourg, France. Formation of Nanotubes of Carbon by Joule Heating of Carbon-contaminated Si Nanochains
H. Kohno, T. Nogami, Y. Ohno, I. Yonenaga, S. Ichikawa, S. Takeda
International Symposium on Technology Evolution for Silicon Nano-Electronics, 6/3-5 2010, Tokyo, Japan. Transformation of an insulating silicon nanochain into a conducting carbon nanotube by selective Joule heating
H. Kohno, T. Nogami, Y. Ohno, S. Ichikawa, S. Takeda
5th Handai Nanoscience and Nanotechnology International Symposium, 9/1-3 2009, Osaka, Japan. Constitutional supercooling in SiGe
I. Yonenaga, T. Taishi, Y. Ohno, Y. Tokumoto
17th American Conference on Crystal Growth and Epitaxy, 8/9-14 2009, Lake Geneva, USA. As-related precipitates in Czochralski-grown Ge and Si crystals
T. Taishi, Y. Ohno, I. Yonenaga
17th American Conference on Crystal Growth and Epitaxy, 8/9-14 2009, Lake Geneva, USA. Relationship between morphological features of the growth interface and growth conditions in heavily-impurity doped Si and Ge crystal growth under occurrence of constitutional supercooling
T. Taishi, Y. Ohno, I. Yonenaga
17th American Conference on Crystal Growth and Epitaxy, 8/9-14 2009, Lake Geneva, USA. Effect of composition on the secondary phase crystallization and seed/crystal interface in lithium niobate crystal by the vertical Bridgman (VB) technique
T. Taishi, N. Bamba, K. Hoshikawa, Y. Ohno, I. Yonenaga
17th American Conference on Crystal Growth and Epitaxy, 8/9-14 2009, Lake Geneva, USA. Strength and dislocation mobility in wide bandgap semiconductors
I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto
25th International Conference on Defects in Semiconductors, 7/20-24 2009, St. Petersburg, Russia. Effects of dislocations on optical properties of wide bandgap GaN and ZnO
I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto
25th International Conference on Defects in Semiconductors, 7/20-24 2009, St. Petersburg, Russia. Precipitation of GeAs in heavily As-doped Ge crystal during Czochralski growth
T. Taishi, Y. Ohno, I. Yonenaga
25th International Conference on Defects in Semiconductors, 7/20-24 2009, St. Petersburg, Russia. Dislocation generation due to thermal shock in Si crystal growth
T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
25th International Conference on Defects in Semiconductors, 7/20-24 2009, St. Petersburg, Russia. Morphological features affected by constitutional supercooling during Czochralski growth of Si and Ge crystals
T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
25th International Conference on Defects in Semiconductors, 7/20-24 2009, St. Petersburg, Russia. Dislocations in wide band gap semiconductors
I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto
28th Electronic Materials Symposium, 7/8-10 2009, Shiga, Japan. Characteristics of Czochralski-grown B-doped Ge crystal
T. Taishi, Y. Murao, Y. Ohno, I. Yonenaga
European Materials Research Society 2009 Spring Meeting, 6/8-12 2009, Strasbourg, France. Electric breakdown of individual Si nanochains
T. Nogami, H. Kohno, Y. Ohno. S. Ichikawa, I. Yonenaga, S. Takeda
The 5th International Symposium on Surface Science and Nanotechnology, 11/9-13 2008, Tokyo, Japan. Dislocation impurity interaction in Si
I. Yonenaga, T. Taishi, Y. Ohno
Dislocations 2008, 10/13-17 2008, Hong Kong, China. Growth and characterization of Mn-doped AgInS2 grown by a hot-press method
Y. Akaki, Y. Shirahata, K. Yoshino, Y. Ohno I. Yonenaga
16th International Conference on Ternary and Multinary Compound, 9/15-19 2008, Berlin, Germany. Strength and dislocation mobility in zinc oxide crystals
I. Yonenaga, H. Koizumi, Y. Ohno, T. Taishi
Extended defects in semiconductors 2008, 9/14-19 2008, Poitiers, France. Dislocation-impurity interaction under magnetic field
I. Yonenaga, K. Takahashi, T. Taishi, Y. Ohno
Extended defects in semiconductors 2008, 9/14-19 2008, Poitiers, France. Hardness and dislocation behavior in indentation of ZnO
H. Koizumi, Y. Ohno, T. Taishi, I. Yonenaga
Extended defects in semiconductors 2008, 9/14-19 2008, Poitiers, France. Generation of misfit dislocations at the seeding interface in bulk crystal growth
T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
Extended defects in semiconductors 2008, 9/14-19 2008, Poitiers, France. Segregation and precipitation in heavily As-doped Czochralski Ge crystal growth
T. Taishi, Y. Murao, Y. Ohno, I. Yonenaga
The 4-th Asian Conference on Crystal Growth and Crystal Technology, 5/21-24 2008, Sendai, Japan. (selected oral)
Impurity segregation in Si-rich SiGe
I. Yonenaga, T. Ayuzawa, T. Taishi, Y. Ohno
The 4-th Asian Conference on Crystal Growth and Crystal Technology, 5/21-24 2008, Sendai, Japan. Dislocation control with impurity interactions in Si
I. Yonenaga, T. Taishi, Y. Ohno
The 4-th Asian Conference on Crystal Growth and Crystal Technology, 5/21-24 2008, Sendai, Japan. Dynamics and luminescence of dislocations in GaN
I. Yonenaga, H. Makino, Y. Ohno, T. Taishi, T. Yao
The 4-th Asian Conference on Crystal Growth and Crystal Technology, 5/21-24 2008, Sendai, Japan. Dislocation-oxygen interaction in Si under high magnetic field
I. Yonenaga, K. Takahashi, T. Taishi, Y. Ohno
The 4-th Asian Conference on Crystal Growth and Crystal Technology, 5/21-24 2008, Sendai, Japan. Dynamics of dislocations in plastically deformed ZnO
I. Yonenaga, H. Koizumi, Y. Ohno, T. Taishi
Materials Research Society 2007 Fall Meeting, 11/26-30 2007, Boston, USA. Dopant segregation in SiGe
I. Yonenaga, T. Ayuzawa, T. Taishi, Y. Ohno
The 15th International Conference on Crystal Growth, 8/12-17 2007, Salt Lake City, USA. Growth of langasite (La3Ga5SiO14) crystals by vertical Bridgman (VB) method in air and an Ar atmosphere for applications to pressure sensors
T. Taishi, T. Hayashi, N. Bamba, Y. Ohno, I. Yonenaga, K. Hoshikawa
The 15th International Conference on Crystal Growth, 8/12-17 2007, Salt Lake City, USA. Growth of lithium niobate (LiNbO3) crystals by vertical Bridgman (VB) method
T. Nishio, T. Taishi, Y. Ohno, I. Yonenaga, K. Hoshikawa
The 15th International Conference on Crystal Growth, 8/12-17 2007, Salt Lake City, USA. Influence of High-Magnetic-Field on Dislocation-Oxygen Interaction in Silicon
I. Yonenaga, K. Takahashi, T. Taishi, Y. Ohno
24th International Conference on Defects in Semiconductors, 7/22-27 2007, Albuquerque, USA. Misfit strain control at seed/crystal interface for hetero-seeding crystal growth
I. Yonenaga, T. Taishi, Y. Ohno
24th International Conference on Defects in Semiconductors, 7/22-27 2007, Albuquerque, USA. Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman method
T. Taishi, T. Hayashi, N. Bamba, Y. Ohno, I. Yonenaga K. Hoshikawa
24th International Conference on Defects in Semiconductors, 7/22-27 2007, Albuquerque, USA. Influence of seed/crystal interface shape on dislocation generation due to thermal shock in Czochralski Si crystal growth
T. Taishi, Y. Ohno, I. Yonenaga K. Hoshikawa
24th International Conference on Defects in Semiconductors, 7/22-27 2007, Albuquerque, USA. Dislocation motion in ZnSe
I. Yonenaga, S. Itoh, Y. Ohno
15th International Conference on Microscopy of Semiconducting Materials, 4/2-5 2007, Cambridge, UK. Site-selective growth of nanoparticle catalysts on silicon surfaces for growth of nanowires
K.Torigoe, Y. Ohno, J. Kikkawa, S. Ichikawa, T. Ichihhashi, S. Takeda
The University of Tokyo International Symposium and the 10th ISSP International Symposium on Nanoscience at Surfaces, 10/9-13 2006, Chiba, Japan. Controlled arrangement of gold nanoparticles on silicon surfaces using high-energy electron beam
K. Torigoe, Y. Ohno, T. Ichihhashi, S. Takeda
The 16th International Microscopy Congress, 9/3-8 2006, Sapporo, Japan. Growth property of silicon nanowires
J. Kikkawa, Y. Ohno, S. Takeda
The 16th International Microscopy Congress, 9/3-8 2006, Sapporo, Japan. Nucleation and growth processes of silicon nanowires
S. Takeda, N. Ozaki, K. Ueda, H. Kohno, J. Kikkawa, Y. Ohno
The 5th International Symposium on Atomic Level Characterization for New Materials and Devices, 12/4-8 2005, Hawaii, USA. Growth rate and critical diameter of silicon nanowires
J. Kikkawa, Y. Ohno, S. Takeda
Osaka University-Asia Pacific-Vietnam National University Hanoi Forum 2005, 9/27-29 2005, Hanoi, Vietnam. Size Distribution of gold nanoparticles arranged on inhomogeneously roughened silicon
K. Torigoe, Y. Ohno, S. Takeda
Osaka University-Asia Pacific-Vietnam National University Hanoi Forum 2005, 9/27-29 2005, Hanoi, Vietnam. Arrangement of gold nanoparticles on rough surfaces introduced by electron irradiation with high flux
K. Torigoe, Y. Ohno, T. Ichihhashi, S. Takeda
23th International Conference on Defects in Semiconductors, 7/24-29 2005, Awaji, Japan. Dynamics of Au Adatoms on electron-irradiated rough Si surfaces
K.Torigoe, Y. Ohno, T. Ichihhashi, S. Takeda
14th International Conference on Microscopy of Semiconducting Materials, 4/11-14 2005, Oxford, UK. Growth of Au clusters in electron-irradiated rough Si surfaces
K. Torigoe, Y. Ohno, T. Ichihhashi, S. Takeda
8th SANKEN International Symposium & 3rd International Symposium on Scientific and Industrial Nanotechnology, 12/6-12/7 2004, Osaka, Japan. Nucleation and growth processes of silicon nanowires
S. Takeda, N. Ozaki, K. Ueda, H. Kohno, J. Kikkawa, Y. Ohno
Materials Research Society 2004 Fall Meeting, 11/29-12/3 2004, Boston, USA. Analysis of growth rate of silicon nanowires
J. Kikkawa, Y. Ohno, S. Takeda
Materials Research Society 2004 Fall Meeting, 11/29-12/3 2004, Boston, USA. Growth of ZnSe nanowires with catalystic Fe particles by molecular beam epitaxy
T. Shirahama, Y. Ohno, S. Takeda
International Symposium on the Creation of Novel Nanomaterials, 1/20-22 2004, Osaka, Japan. Diffusion of Au adatoms on Si surface irradiated by electrons
K. Torigoe, Y. Ohno, T. Ichihashi, S. Takeda
International Symposium on the Creation of Novel Nanomaterials, 1/20-22 2004, Osaka, Japan. Initial stage of the growth of silicon nanowires
J. Kikkawa, Y. Ohno, S. Takeda
International Symposium on the Creation of Novel Nanomaterials, 1/20-22 2004, Osaka, Japan. Nanocatalysts for the growth of silicon nanowires
S. Takeda, N. Ozaki, Y. Ohno, H. Kohno, J. Kikkawa
International Symposium on the Creation of Novel Nanomaterials, 1/20-22 2004, Osaka, Japan. Formation and properties silicon/silicide/oxide nanochains
H. Kohno, Y. Ohno, S. Ichikawa, T. Akita, K. Tanaka, S. Takeda
Materials Research Society 2003 Fall Meeting, 12/1-5 2003, Boston, USA. Formation of extended defects in polycrystalline SiGe by electron irradiation
J. Kikkawa, J. Yamasaki, Y. Ohno, M. Kohyama, S. Takeda
International Conference on Polycrystalline Semiconductors 2002, 9/10-13 2002, Nara, Japan. Novel amorphization process in silicon induced by electron irradiation
J. Yamasaki, Y. Ohno, H. Kohno, N. Ozaki, S. Takeda
19th International Conference on Amorphous and Microcrystalline Semiconductors, 8/27-31 2001, Nice, France. Optical properties of Si nanowhiskers (nanowires) on a Si{111} surface
N. Ozaki, Y. Ohno, S. Takeda
Materials Research Society 1999 Fall Meeting, 11/29-12/3 1999, Boston, USA. Point defect reaction in (Al)GaInP STQW lasers enhanced by laser operation
A. Ihara, Y. Ohno, S. Takeda, S. Nagao, D. Diffily, Y. Satoh, K. Shimoyama, N. Hosoi
20th International Conference on Defects in Semiconductors, 7/26-30 1999, USA. Formation of microcracks in an annealed cubic boron nitride
M. Aki, Y. Ohno, S. Takeda
11th International Conference on Microscopy of Semiconducting Materials, 3/22-25 1999, Oxford, UK. VLS growth of Si nanowhiskers on a H-terminated Si{111} surface
N. Ozaki, Y. Ohno, S. Takeda, M. Hirata
Materials Research Society 1998 Fall Meeting, 11/30-12/3 1998, Boston, USA.
[Press]
Joule heating transforms silicon nanochains into CNTs
H. Kohno, T. Nogami, Y. Ohno, S. Ichikawa
Highlighted in
nanotechweb.org, 26 August (2009).
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