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Academic Researcher
Yasuo SHIMIZU, Ph.D.
Institute for Materials Research, Tohoku University
Address:
2145-2 Narita, Oarai, Ibaraki 311-1313, Japan
Phone: +81-29-267-3181, Fax: +81-29-267-4947
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Yasuo_Shimizu
| PROFESSIONAL BACKGROUND | ACADEMIC BACKGROUND | AWARDS |
| PUBLICATIONS | INTERNATIONAL CONFERENCES |
Last Update: April 1, 2020



● SHORT BIOGRAPHY ●

Yasuo Shimizu received a Ph.D. in engineering with experimental studies of dopant and host atom behavior in Si using isotopic heterostructures in Prof. Kohei M. Itoh Group at Keio University (Japan) in March 2009. He worked as Research Fellow of the Japan Society for the Promotion of Science (JSPS) in 2008 and 2009. After his study of a conformal doping technique with vapor phase doping and atomic layer epitaxy on Group-IV semiconductors at IMEC vzw (Belgium) in 2009 as Postdoctoral Researcher of Katholieke Universiteit Leuven, he joined the Oarai Center, Institute for Materials Research at Tohoku University (Japan) in April 2010 as Assistant Professor in Prof. Yasuyoshi Nagai Group. His research is focused on elemental distribution analysis in Si and Ge-based semiconductor devices and nanostructures with an atom probe tomography technique.
He is currently a member of Scientific International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions (SISS) and System Device Roadmap Committee of Japan (SDRJ).




● PROFESSIONAL BACKGROUND ●


2020.4 - 2020.4   Academic Researcher
  Institute for Materials Research, Tohoku University
2010.4 - 2020.3   Assistant Professor
  Institute for Materials Research, Tohoku University
2009.4 - 2010.1   Post-Doctoral Researcher
  Department of Metallurgy and Materials Engineering,
  Katholieke Universiteit Leuven (Belgium) and IMEC vzw
2008.4 - 2010.3   Research Fellow
  Japan Society for the Promotion of Science
2007.10 - 2009.3   Research Assistant
  Global Center of Excellence Program at Keio University



● ACADEMIC BACKGROUND ●


2004.4 - 2009.3   Master & Ph.D. Course
  School of Fundamental Science and Technology
  Keio University
2000.4 - 2004.3   Department of Applied Physics and Physico-Informatics
  Keio University



● AWARDS ●


2017.4   JSAP Poster Award, 64th Spring Meeting 2017
  The Japan Society of Applied Physics (Collaboration work)
2016.6   Best Poster Award, Atom Probe Tomography & Microscopy 2016
2013.5   Poster Award, 125th IMR Lecture (Internal)
2012.11   MRS Outstanding Poster Award
  Materials Research Society (MRS) Fall Meeting 2012
2011.3   MIRAI Best Award (Collaboration work)
2009.3   Distinguished Research Associate 2008, Keio G-COE Program
2008.3   First Prize
  The 1st Keio-Gent G-COE Joint Workshop for Future Network
2008.3   First Prize, The Final Report 2007 in Keio G-COE Program
2007.11   Student Award
  16th International Conference on Secondary Ion Mass Spectrometry
2006.8   Incentive Award for Excellent Presentation
  (53rd Spring Meeting 2006)
  The Japan Society of Applied Physics and Related Societies
2006.3   Best Senior Research Award
  Center for Applied Physics and Physico-Informatics, Keio University



● PUBLICATIONS ●


| Publons | ORCID |

    - 2020 -

  1. Characterization of nanoscopic Cu/diamond interfaces prepared by surface activated bonding: Implications for thermal management
    J. Liang, Y. Ohno, Y. Yamashita, Y. Shimizu, S. Kanda, N. Kamiuchi, S.-W. Kim , K. Koyama, Y. Nagai, M. Kasu, and N. Shigekawa
    ACS Applied Nano Materials, Vol. 3, Issue 3, pp. 2455-2462 (2020).

  2. Oxidation-enhanced Si self-diffusion in isotopically modulated silicon nanopillars
    R. Kiga, S. Hayashi, S. Miyamoto, Y. Shimizu, Y. Nagai, T. Endoh, and K. M. Itoh
    Journal of Applied Physics, Vol. 127, Issue 4, 045704 (2020) (6 pages).

  3. Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding
    Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, Y. Nagai, J. Liang, and N. Shigekawa
    Japanese Journal of Applied Physics, Vol. 59, No. SB, SBBB05 (2020) (5 pages).

  4. Fabrication of diamond/Cu direct bonding for power device applications
    S. Kanda, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, and J. Liang
    Japanese Journal of Applied Physics, Vol. 59, No. SB, SBBB03 (2020) (5 pages).


    - 2019 -

  5. Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding
    Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, and Y. Nagai
    Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), p. 56, ISBN: 978-4-9047-4307-2

  6. Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam
    Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, N. Ebisawa, Y. Nagai, J. Liang, and N. Shigekawa
    Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), p. 55, ISBN: 978-4-9047-4307-2

  7. Outstanding tensile properties of a precipitation-strengthened FeCoNiCrTi0.2 high-entropy alloy at room and cryogenic temperatures
    Y. Tong, D. Chen, B. Han, J. Wang, R. Feng, T. Yang, C. Zhao, Y. L. Zhao, W. Guo, Y. Shimizu, C. T. Liu, P. K. Liaw, K. Inoue, Y. Nagai, A. Hu, and J. J. Kai
    Acta Materialia, Vol. 165, pp. 228-240 (2019).


    - 2018 -

  8. Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study
    Y. Tu, Y. Shimizu, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, M. Inoue, F. Yano, K. Inoue, and Y. Nagai
    Journal of Applied Physics, Vol. 124, Issue 15, 155702 (2018) (8 pages).

  9. Industrial application of atom probe tomography to semiconductor devices
    A. D. Giddings, S. Koelling, Y. Shimizu, R. Estivill, K. Inoue, W. Vandervorst, and W. K. Yeoh
    Scripta Materialia, Vol. 148, pp. 82-90 (2018).
    Viewpoint set

  10. Composition evolution of gamma prime nanoparticles in the Ti-doped CoFeCrNi high entropy alloy
    B. Han, J. Wei, Y. Tong, D. Chen, Y. Zhao, J. Wang, F. He, T. Yang, C. Zhao, Y. Shimizu, K. Inoue, Y. Nagai, A. Hu, C.-T. Liu, and J.-J. Kai
    Scripta Materialia, Vol. 148, pp. 42-46 (2018).

  11. Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1-xO2/SiO2 high-k stacks as evidenced by atom probe tomography
    Y. Tu, B. Han, Y. Shimizu, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, M. Inoue, F. Yano, K. Inoue, and Y. Nagai
    Applied Physics Letters, Vol. 112, Issue 3, 032902 (2018) (5 pages).


    - 2017 -

  12. Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations
    Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, and M. Kohyama
    Journal of Microscopy, Vol. 268, Issue 3, pp. 230-238 (2017).

  13. 1.54 μm photoluminescence from Er:Ox centers at extremely low concentration in silicon at 300 K
    M. Celebrano, L. Ghirardini, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii, and E. Prati
    Optics Letters, Vol. 42, Issue 17, pp. 3311-3314 (2017).
    arXiv: 1702.00331

  14. Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures
    Y. Tu, B. Han, Y. Shimizu, K. Inoue, Y. Fukui, M. Yano, T. Tanii, T. Shinada, and Y. Nagai
    Nanotechnology, Vol. 28, No. 38, 385301 (2017) (7 pages).

  15. Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration
    E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, and T. Tanii
    Proceedings of 2017 Silicon Nanoelectronics Workshop (SNW), pp. 105-106, ISSN 2161-4644

  16. Atom probe study of erbium and oxygen co-implanted silicon
    Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Y. Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, and Y. Nagai
    Proceedings of 2017 Silicon Nanoelectronics Workshop (SNW), pp. 99-100, ISSN 2161-4644

  17. Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon
    Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, and M. Kohyama
    Applied Physics Letters, Vol. 110, Issue 6, 062105 (2017) (5 pages).

  18. Weak-beam scanning transmission electron microscopy for quantitative dislocation density measurement in steels
    K. Yoshida, M. Shimodaira, T. Toyama, Y. Shimizu, K. Inoue, T. Yoshiie, K. J. Milan, R. Gerard, and Y. Nagai
    Microscopy, Vol. 66, Issue 2, pp. 120-130 (2017).
    EDITOR'S CHOICE

  19. Influence of laser power on atom probe tomographic analysis of boron distribution in silicon
    Y. Tu, H. Takamizawa, B. Han, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, and Y. Nagai
    Ultramicroscopy, Vol. 173, pp. 58-63 (2017).


    - 2016 -

  20. Boron distributions in individual core-shell Ge/Si and Si/Ge heterostructured nanowires
    B. Han, Y. Shimizu, J. Wipakorn, K. Nishibe, Y. Tu, K. Inoue, N. Fukata, and Y. Nagai
    Nanoscale, Vol. 8, Issue 47, pp. 19811-19815 (2016).

  21. Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals
    Y. Ohno, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, and S. Takeda
    Applied Physics Letters, Vol. 109, Issue 14, 142105 (2016) (4 pages).

  22. Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography
    H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nozawa, T. Toyama, F. Yano, M. Inoue, A. Nishida, and Y. Nagai
    Applied Physics Express, Vol. 9, No. 10, 106601 (2016) (4 pages).

  23. Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography
    Y. Kunimune, Y. Shimada, Y. Sakurai, M. Inoue, A. Nishida, B. Han, Y. Tu, H. Takamizawa, Y. Shimizu, K. Inoue, F. Yano, Y. Nagai, T. Katayama, and T. Ide
    AIP Advances, Vol. 6, Issue 4, 045121 (2016) (7 pages).

  24. Suppression of segregation of the phosphorus δ-doping layer in germanium by incorporation of carbon
    M. Yamada, K. Sawano, M. Uematsu, Y. Shimizu, K. Inoue, Y. Nagai, and K. M. Itoh
    Japanese Journal of Applied Physics, Vol. 55, No. 3, 031304 (2016) (5 pages).

  25. Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements
    Y. Shimizu, H. Takamizawa, K. Inoue, F. Yano, S. Kudo, A. Nishida, T. Toyama, and Y. Nagai
    Japanese Journal of Applied Physics, Vol. 55, No. 2, 026501 (2016) (5 pages).

  26. Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography
    B. Han, Y. Shimizu, G. Seguini, E. Arduca, C. Castro, G. Ben Assayag, K. Inoue, Y. Nagai, S. Schamm-Chardon, and M. Perego
    RSC Advances, Vol. 6, Issue 5, pp. 3617-3622 (2016).


    - 2015 -

  27. Elemental distributions in multilayer systems by laser-assisted atom probe tomography with various analysis directions
    M. Kubota, H. Takamizawa, Y. Shimizu, Y. Nozawa, N. Ebisawa, T. Toyama, Y. Ishida, K. Yanagiuchi, K. Inoue, and Y. Nagai
    Microscopy and Microanalysis, Vol. 21, Issue 6, pp. 1373-1378 (2015).

  28. Characterization and process development of CVD/ALD‐based Cu(Mn)/Co(W) interconnect system
    K. Shima, Y. Tu, B. Han, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, and Y. Shimogaki
    Proceedings of Advanced Metallization Conference (AMC) 2015 [Open Access], ISBN 978‐3‐944640‐97‐6

  29. Diffusivity and solubility of Cu in a reactor pressure vessel studied by atom probe tomography
    M. Shimodaira, T. Toyama, F. Takahama, N. Ebisawa, Y. Nozawa, Y. Shimizu, K. Inoue, and Y. Nagai
    Materials Transactions, Vol. 56, No. 9, pp. 1513-1516 (2015).

  30. Phosphorus and boron diffusion paths in the polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field-effect transistor investigated by atom probe tomography
    B. Han, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, F. Yano, Y. Kunimune, M. Inoue, and A. Nishida
    Applied Physics Letters, Vol. 107, Issue 2, 023506 (2015) (4 pages).

  31. Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals
    Y. Ohno, K. Inoue, K. Fujiwara, M. Deura, K. Kutsukake, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, and Y. Nagai
    Applied Physics Letters, Vol. 106, Issue 25, 251603 (2015) (4 pages).

  32. Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si
    Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, and Y. Nagai
    Physical Review B, Vol. 91, Issue 23, 235315 (2015) (5 pages).

  33. Microstructural evolution of RPV steels under proton and ion irradiation studied by positron beam spectroscopy
    J. Jiang, Y. C. Wu, X. B. Liu, R. S. Wang, Y. Nagai, K. Inoue, Y. Shimizu, and T. Toyama
    Journal of Nuclear Materials, Vol. 458, pp. 326-334 (2015).


    - 2014 -

  34. Role of W and Mn for reliable 1X nanometer-node ultra-large-scale integration Cu interconnects proved by atom probe tomography
    K. Shima, Y. Tu, H. Takamizawa, H. Shimizu, Y. Shimizu, T. Momose, K. Inoue, Y. Nagai, and Y. Shimogaki
    Applied Physics Letters, Vol. 105, Issue 13, 133512 (2014) (5 pages).

  35. The diffusivity and solubility of copper in ferromagnetic-iron at lower temperatures studied by atom probe tomography
    T. Toyama, F. Takahama, A. Kuramoto, H. Takamizawa, Y. Nozawa, N. Ebisawa, M. Shimodaira, Y. Shimizu, K. Inoue, and Y. Nagai
    Scripta Materialia, Vol. 83, pp. 5-8 (2014).

  36. Effects of post-irradiation annealing and re-irradiation on microstructure in surveillance test specimens of the Loviisa-1 reactor studied by atom probe tomography and positron annihilation
    T. Toyama, A. Kuramoto, Y. Nagai, K. Inoue, Y. Nozawa, Y. Shimizu, Y. Matsukawa, M. Hasegawa, and M. Valo
    Journal of Nuclear Materials, Vol. 449, Issues 1-3, pp. 207-212 (2014).

  37. Depth analysis of Ta/NiFe/Ta/CoFeB/Ta/NiFe multilayer thin films: Comparison of atom probe tomography and Auger electron spectroscopy
    M. Kubota, Y. Ishida, K. Yanagiuchi, H. Takamizawa, Y. Nozawa, N. Ebisawa, Y. Shimizu, T. Toyama, K. Inoue, and Y. Nagai
    Journal of Surface Analysis, Vol. 20, No. 3, pp. 207-210 (2014).

  38. Behavior of phosphorous and contaminants from monolayer doping combined with a conventional spike annealing method
    Y. Shimizu, H. Takamizawa, K. Inoue, F. Yano, Y. Nagai, L. Lamagna, G. Mazzeo, M. Perego, and E. Prati
    Nanoscale, Vol. 6, Issue 2, pp. 706-710 (2014).


    - 2013 -

  39. New applications in atom probe tomography
    D. J. Larson, J. W. Valley, T. Ushikubo, M. K. Miller, H. Takamizawa, Y. Shimizu, L. M. Gordon, D. Joester, A. D. Giddings, D. A. Reinhard, T. J. Prosa, D. P. Olson, D. F. Lawrence, P. H. Clifton, R. M. Ulfig, I. Y. Martin, and T. F. Kelly
    Microscopy and Microanalysis, Vol. 19 (Supplement 2), pp. 1022-1023 (2013).

  40. Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy
    Y. Ohno, K. Inoue, Y. Tokumoto, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, and S. Takeda
    Applied Physics Letters, Vol. 103, Issue 10, 102102 (2013) (4 pages).

  41. Three-dimensional characterization of deuterium implanted in silicon using atom probe tomography
    H. Takamizawa, K. Hoshi, Y. Shimizu, F. Yano, K. Inoue, S. Nagata, T. Shikama, and Y. Nagai
    Applied Physics Express, Vol. 6, No. 6, 066602 (2013) (3 pages).

  42. Three-dimensional dopant characterization in actual metal-oxide-semiconductor devices of 65 nm node by atom probe tomography
    K. Inoue, H. Takamizawa, Y. Shimizu, T. Toyama, F. Yano, A. Nishida, T. Mogami, K. Kitamoto, T. Miyagi, J. Kato, S. Akahori, N. Okada, M. Kato, H. Uchida, and Y. Nagai
    Applied Physics Express, Vol. 6, No. 4, 046502 (2013) (4 pages).

  43. Atomic-scale characteriation of germanium isotopic multilayers by atom probe tomography
    Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, T. Toyama, K. Inoue, E. E. Haller, K. M. Itoh, and Y. Nagai
    Journal of Applied Physics, Vol. 113, Issue 2, 026101 (2013) (3 pages).


    - 2012 -

  44. Correlation between threshold voltage and channel boron concentration in silicon-based negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography
    H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, T. Mogami, N. Okada, M. Kato, H. Uchida, K. Kitamoto, T. Miyagi, J. Kato, and Y. Nagai
    Applied Physics Letters, Vol. 100, Issue 25, 253504 (2012) (3 pages).

  45. Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography
    H. Takamizawa, Y. Shimizu, Y. Nozawa, T. Toyama, H. Morita, Y. Yabuuchi, M. Ogura, and Y. Nagai
    Applied Physics Letters, Vol. 100, Issue 9, 093502 (2012) (3 pages).

  46. Investigation of the factors determining the SIMS depth resolution function in silicon-isotope multiple layers
    M. Tomita, K. Koike, H. Akutsu, S. Takeno, Y. Kawamura, Y. Shimizu, M. Uematsu, and K. M. Itoh
    Journal of Vacuum Science & Technology B, Vol. 30, Issue 1, 011803 (2012) (12 pages).


    - 2011 -

  47. Three-dimensional elemental analysis of commercial 45 nm node device with high-k / metal gate by atom probe tomography
    K. Inoue, H. Takamizawa, K. Kitamoto, J. Kato, T. Miyagi, Y. Nakagawa, N. Kawasaki, N. Sugiyama, H. Hashimoto, Y. Shimizu, T. Toyama, Y. Nagai, and A. Karen
    Applied Physics Express, Vol. 4, No. 11, 116601 (2011) (3 pages).

  48. Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging
    H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, N. Okada, M. Kato, H. Uchida, F. Yano, A. Nishida, T. Mogami, and Y. Nagai
    Applied Physics Letters, Vol. 99, Issue 13, 133502 (2011) (3 pages).

  49. Impact of carbon coimplantation on boron behavior in silicon: Carbon-boron coclustering and suppression of boron diffusion
    Y. Shimizu, H. Takamizawa, K. Inoue, T. Toyama, Y. Nagai, N. Okada, M. Kato, H. Uchida, F. Yano, T. Tsunomura, A. Nishida, and T. Mogami
    Applied Physics Letters, Vol. 98, Issue 23, 232101 (2011) (3 pages).

  50. Channel dopant distribution in metal-oxide-semiconductor field-effect transistors analyzed by laser-assisted atom probe tomography
    H. Takamizawa, K. Inoue, Y. Shimizu, T. Toyama, F. Yano, T. Tsunomura, A. Nishida, T. Mogami, and Y. Nagai
    Applied Physics Express, Vol. 4, No. 3, 036601 (2011) (3 pages).

  51. Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures
    Y. Shimizu, Y. Kawamura, M. Uematsu, M. Tomita, T. Kinno, N. Okada, M. Kato, H. Uchida, M. Takahashi, H. Ito, H. Ishikawa, Y. Ohji, H. Takamizawa, Y. Nagai, and K. M. Itoh
    Journal of Applied Physics, Vol. 109, Issue 3, 036102 (2011) (3 pages).


    - 2010 -

  52. Critical displacement of host-atoms for amorphization in germanium induced by arsenic implantation
    Y. Kawamura, Y. Shimizu, H. Oshikawa, M. Uematsu, E. E. Haller, and K. M. Itoh
    Applied Physics Express, Vol. 3, No. 7, 071303 (2010) (3 pages).


    - 2009 -

  53. Quantitative evaluation of germanium displacement induced by arsenic implantation using germanium isotope superlattices
    Y. Kawamura, Y. Shimizu, H. Oshikawa, M. Uematsu, E. E. Haller, and K. M. Itoh
    Physica B: Condensed Matter, Vol. 404, Issues 23-24, pp. 4546-4548 (2009).

  54. Atom probe microscopy of three-dimensional distribution of silicon isotopes in 28Si/30Si isotope superlattices with sub-nanometer spatial resolution
    Y. Shimizu, Y. Kawamura, M. Uematsu, K. M. Itoh, M. Tomita, M. Sasaki, H. Uchida, and M. Takahashi
    Journal of Applied Physics, Vol. 106, Issue 7, 076102 (2009) (3 pages).

  55. Probing the behaviors of point defects in silicon and germanium using isotope superlattices
    M. Uematsu, M. Naganawa, Y. Shimizu, K. M. Itoh, K. Sawano, Y. Shiraki, and E. E. Haller
    ECS Transactions, Vol. 25, Issue 3, pp. 51-54 (2009).

  56. Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices
    Y. Shimizu, M. Uematsu, K. M. Itoh, A. Takano, K. Sawano, and Y. Shiraki
    Journal of Applied Physics, Vol. 105, Issue 1, 013504 (2009) (6 pages).


    - 2008 -

  57. Silicon isotope superlattices: Ideal SIMS standards for shallow junction characterization
    Y. Shimizu, A. Takano, and K. M. Itoh
    Applied Surface Science, Vol. 255, Issue 4, pp. 1345-1347 (2008).

  58. Film thickness determinating method of the silicon isotope superlattices by SIMS
    A. Takano, Y. Shimizu, and K. M. Itoh
    Applied Surface Science, Vol. 255, Issue 4, pp. 1430-1432 (2008).

  59. Charge states of vacancies in germanium investigated by simultaneous observation of germanium self- and arsenic diffusion
    M. Naganawa, Y. Shimizu, M. Uematsu, K. M. Itoh, K. Sawano, Y. Shiraki, and E. E. Haller
    Applied Physics Letters, Vol. 93, Issue 19, 191905 (2008) (3 pages).

  60. Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon: The influence of SiO2 films
    M. Naganawa, Y. Kawamura, Y. Shimizu, M. Uematsu, K. M. Itoh, H. Ito, M. Nakamura, H. Ishikawa, and Y. Ohji
    Japanese Journal of Applied Physics, Vol. 47, No. 8R, pp.6205-6207 (2008).

  61. Quantitative evaluation of silicon displacement induced by arsenic implantation using silicon isotope superlattices
    Y. Shimizu, M. Uematsu, K. M. Itoh, A. Takano, K. Sawano, and Y. Shiraki
    Applied Physics Express, Vol. 1, No. 2, 021401 (2008) (3 pages).


    - 2007 -

  62. Simultaneous observation of the behavior of impurities and silicon atoms in silicon isotope superlattices
    Y. Shimizu, A. Takano, M. Uemtasu, and K. M. Itoh
    Physica B: Condensed Matter, Vols. 401-402, pp.597-599 (2007).

  63. Defect studies for the development of nano-scale silicon diffusion simulators
    M. Uematsu, Y. Shimizu, and K. M. Itoh
    Physica B: Condensed Matter, Vols. 401-402, pp. 511-518 (2007).

  64. Experimental evidence of the vacancy-mediated silicon self-diffusion in single-crystalline silicon
    Y. Shimizu, M. Uematsu, and K. M. Itoh
    Physical Review Letters, Vol. 98, Issue 9, 095901 (2007) (4 pages).

  65. Self-diffusion of Si at low temperatures revealed by annealing and Raman spectroscopy of Si isotope superlattices
    Y. Shimizu and K. M. Itoh
    AIP Conference Proceedings, 28th International Conference on the Physics of Semiconductors, Vol. 893, pp. 205-206 (2007).


    - 2006 -

  66. Observation of Si emission during thermal oxidation of Si(001) with high-resolution RBS
    S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, and K. Shiraishi
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 249, Issues 1-2, pp. 390-393 (2006).

  67. Growth and characterization of short-period silicon isotope superlattices
    Y. Shimizu and K. M. Itoh
    Thin Solid Films, Vol. 508, Issues 1-2, pp. 160-162 (2006).



● INTERNATIONAL CONFERENCES (Present - 2010, First author only) ●

  1. Direct observation of dopants in commercial textured silicon heterojunction solar cells by atom probe tomography
    Y. Shimizu, B. Han, N. Ebisawa, Y. Ichihashi, T. Hashiguchi, H. Katayama, M. Matsumoto, A. Terakawa, K. Inoue, and Y. Nagai
    2019 Materials Research Society (MRS) Fall Meeting & Exhibit, Boston, Massachusetts, USA, December 1 - 6, 2019.

  2. Atom probe study of elemental distribution around Si/GaAs interfaces fabricated by surface-activated bonding -Effect of low-temperature focused ion beam processing-
    Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, and Y. Nagai
    Summit of Materials Science 2019 (SMS2019) and Global Institute for Materials Research Tohoku User Meeting (GIMRT), Sendai, November 27 - 28, 2019.

  3. Atom probe of Si/GaAs interface formed by surface-activated bonding: Impact of low-temperature FIB processing on compositional distributions
    Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, and Y. Nagai
    The 22nd International Conference on Secondary Ion Mass Spectrometry (SIMS-XXII), Kyoto, Japan, October 20 - 25, 2019.

  4. Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding
    Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, and Y. Nagai
    2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), Kanazawa, Japan, May 21 - 25, 2019.

  5. Impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography
    Y. Shimizu, N. Ebisawa,Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, and Y. Nagai
    2018 Materials Research Society (MRS) Fall Meeting & Exhibit, Boston, Massachusetts, USA, November 25 - 30, 2018.

  6. Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding
    Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, and Y. Nagai
    Summit of Materials Science 2018 (SMS2018), Sendai, Japan, October 29 - 30, 2018.

  7. Effect of coimplanted carbon on boron behavior in silicon: SIMS and atom probe study
    Y. Shimizu, Y. Tu, F. Yano, K. Inoue, and Y. Nagai
    20th Scientific International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions (SISS-20), Seikei University, Tokyo, Japan, June 28 - 29, 2018.

  8. Atom probe study of silicon-based device structures
    Y. Shimizu [Invited talk], B. Han, Y. Tu, K. Inoue, and Y. Nagai
    Atom Probe Tomography and Microscopy (APT&M) 2018, NIST, Gaithersburg, Maryland, USA, June 10 - 15, 2018.

  9. Dopant distribution analysis core-shell nanowires by atom probe tomography
    Y. Shimizu, B. Han, W. Jevasuwan, K. Nishibe, Y. Tu, K. Inoue, N. Fukata, and Y. Nagai
    2017 Materials Research Society (MRS) Fall Meeting & Exhibit, Boston, Massachusetts, USA, November 26 - December 1, 2017.

  10. Atom probe study of semiconductor-based nanostructure
    Y. Shimizu [Invited talk]
    IUMRS-ICAM 2017, Kyoto, Japan, August 27 - September 1, 2017.

  11. Atom probe study of erbium and oxygen co-implanted silicon
    Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Y. Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, and Y. Nagai
    2017 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 4 - 5, 2017. [Published in IEEE Xplore]

  12. Dopant detection in silicon nanostructures by atom probe tomography
    Y. Shimizu [Invited talk] and K. Inoue
    4th Bilateral Italy-Japan Seminar: Innovative Solutions for Single Atom Applications in Photonics and Nanoelectronics, Colico, Lago di Como, Italy, May 2 - 4, 2017.

  13. Hydrogen distribution analysis in Al2O3 films by atom probe tomography
    Y. Shimizu, B. Han, Y. Tu, K. Inoue, F. Yano, M. Inoue, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, and Y. Nagai
    2016 Materials Research Society (MRS) Fall Meeting & Exhibit, Boston, Massachusetts, USA, November 27 - December 2, 2016.

  14. Atom probe tomographic study of human tooth materials
    Y. Shimizu, T. A. Bakhsh, A. Sadr, J. Espigares, J. Tagami, B. Han, Y. Tu, K. Yoshida, K. Inoue, and Y. Nagai
    Atom Probe Tomography & Microscopy (APT&M) 2016, Gyeongju, South Korea, June 12 - 17, 2016.
    Best Poster Award

  15. Atom probe tomographic study of dopant distribution controlling for future silicon nanoelectronics
    Y. Shimizu, H. Bin, Y. Tu, K. Inoue, and Y. Nagai
    Summit of Materials Science 2016 (SMS2016), Sendai, Japan, May 18 - 20, 2016.

  16. Elemental distributions in semiconductor-based device structures analyzed by atom probe tomography
    Y. Shimizu [Invited talk], H. Bin, Y. Tu, K. Inoue, and Y. Nagai
    2015 International Symposium for Advanced Materials Research (ISAMR 2015), Sun Moon Lake, Taiwan, August 16 - 20, 2015.

  17. 3D atomic-scale-analysis of elemental distribution in silicon nanoelectronics
    Y. Shimizu [Invited talk] and K. Inoue
    3rd Bilateral Italy-Japan Seminar: Silicon nanoelectronics for advanced applications, Campus Plaza Kyoto, Kyoto, Japan, June 16, 2015.

  18. Atom probe analysis for dopant profiling of near-surface by employing focused ion beam direct deposition technique
    Y. Shimizu, H. Takamizawa, K. Inoue, F. Yano, Y. Nagai, L. Lamagna, G. Mazzeo, M. Perego, and E. Prati
    2015 APT User's Group Meeting, Madison, Wisconsin, USA, June 9 - 12, 2015.

  19. Interfacial analysis of arsenic ion-implanted germanium isotopic multilayer structures studied by atom probe tomography
    Y. Shimizu, H. Takamizawa, B. Han, Y. Kawamura, M. Uematsu, E. E. Haller, K. M. Itoh, T. Toyama, and Y. Nagai
    Atom Probe Tomography & Microscopy (APT&M) 2014, The University of Stuttgart, Stuttgart, Germany, August 31 - September 5, 2014.

  20. Elemental distribution analysis in semiconductor-based MOS devices with atom probe tomography
    Y. Shimizu [Invited talk], H. Takamizawa, K. Inoue, F. Yano, and Y. Nagai
    2013 JSAP-MRS Symposia, Doshisha University, Kyoto, Japan, September 16 - 20, 2013.

  21. A strategy for obtaining elemental distributions near the surface without temperature rise using focused ion beam direct deposition
    Y. Shimizu, H. Takamizawa, Y. Nozawa, K. Inoue, T. Toyama, and Y. Nagai
    2013 APT User's Group Meeting, Madison, Wisconsin, USA, June 26 - 28, 2013.

  22. Dopant analysis of semiconductor devices with atom probe tomography
    Y. Shimizu [Invited talk]
    15th International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions, Seikei University, Tokyo, Japan, April 25 - 26, 2013.

  23. Atom probe tomography of germanium isotopic multilayer structures
    Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, K. M. Itoh, E. E. Haller, T. Toyama, and Y. Nagai
    2012 Materials Research Society (MRS) Fall Meeting & Exhibit, Boston, Massachusetts, USA, November 25 - 30, 2012.
    MRS Outstanding Poster Award

  24. Tomographic study of spatial resolution in laser-assisted atom probe using semiconductor isotopic heterostructures
    Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, K. M. Itoh, T. Toyama, and Y. Nagai
    The 53rd International Field Emission Symposium, The University of Alabama, Tuscaloosa, Alabama, USA, May 21 - 25, 2012.

  25. Characterization of three-dimensional dopant distribution in MOSFETs by atom probe
    Y. Shimizu [Invited talk]
    1st Annual World Congress of Nano-S&T, The Dalian World Expo Center, Dalian, China, October 23 - 26, 2011.

  26. Atomic-scale analysis for boron and carbon atoms co-implanted into silicon studied by laser-assisted atom probe tomography
    Y. Shimizu, H. Takamizawa, K. Inoue, T. Toyama, Y. Nagai, N. Okada, M. Kato, H. Uchida, F. Yano, T. Tsunomura, A. Nishida, and T. Mogami
    International Symposium on Characteristics Variability in Scaled Transistors, The University of Tokyo, February 10, 2011.

  27. Influence of carbon co-implantation on boron profile in silicon studied by laser-assisted atom probe tomography
    Y. Shimizu, H. Takamizawa, K. Inoue, T. Toyama, Y. Nagai, N. Okada, M. Kato, H. Uchida, F. Yano, T. Tsunomura, A. Nishida, and T. Mogami
    2010 Materials Research Society (MRS) Fall Meeting & Exhibit, Boston, Massachusetts, USA, November 29 - December 3, 2010.

  28. Vapor phase doing for ultra shallow junction formation in advanced Si CMOS devices
    Y. Shimizu, N. D. Nguyen, S. Jiang, E. Rosseel, S. Takeuchi, J.-L. Everaert, R. Loo, W. Vandervorst, and M. Caymax
    5th International Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku University, Sendai, Japan, January 29 - 30, 2010.


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