Publications

[Book chapters] [Original papers] [Proceedings] [Transactions]
Web of Science　 ResearchGate
[Book chapters]

  1. Cathodoluminiscence in SEM and TEM
    Y. Ohno, S. Takeda
    In-situ Electron Microscopy, Ed. G. Dehm, J. M. Howe, and J. Zweck, WILEY-VCH (2012) 303-319.

  2. In-situ analysis of optoelectronic properties of semiconductor nanostructures and defects in transmission electron microscopes
    Y. Ohno, I. Yonenaga, S. Takeda
    Optoelectronic Devices and Properties, Ed. Oleg Sergiyenko, INTECH (2011) 241-262.

[Original papers]　　

  1. High thermal conductivity in wafer-scale cubic silicon carbide crystals
    Z. Cheng, J. Liang, K. Kawamura, H. Zhou, H. Asamura, H. Uratani, J. Tiwari, S. Graham, Y. Ohno, Y. Nagai, T. Feng, N. Shigekawa, D.G. Cahill
    Nat. Commun. (2022) in press.

  2. Room temperature bonding of GaN and diamond via a SiC layer
    J. Liang, Y. Ohno, Y. Shimizu, Y. Nagai, N. Shigekawa
    Func. Diam. 2 (2022) in press.

  3. Heterojunctions fabricated by surface activated bonding-dependence of their nanostructural and electrical characteristics on thermal process
    N. Shigekawa, J. Liang, Y. Ohno
    Jpn. J. Appl. Phys. 61 (2022) 120101/1-19.

  4. Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using pre-trained machine learning model
    Y. Fukuda, K. Kutsukake, T. Kojima, Y. Ohno, N. Usami
    J. Appl. Phys. 132 (2022) 025102/1-8.

  5. Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding
    Y. Ohno, J. Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa
    Jpn. J. Appl. Phys. 61 (2022) SF1006/1-5.

  6. AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process
    R. Kagawa, K. Kawamura, Y. Sakaida, S. Ouchi, H. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, J. Liang, N. Shigekawa
    Appl. Phys. Express 15 (2022) 041003/1-5.

  7. Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high power device applications
    J. Liang, D. Takatsuki, M. Higashiwaki, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
    Jpn. J. Appl. Phys. 61 (2022) SF1001/1-7.

  8. Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design
    J. Liang, A. Kobayashi, Y. Shimizu, Y. Ohno, S.-W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa
    Adv. Mater. 33 (2021) 2104564/1-13.

  9. Segregation mechanism of arsenic dopants at grain boundaries in silicon
    Y. Ohno, T. Yokoi, Y. Shimizu, J. Ren, K. Inoue, Y. Nagai, K. Kutsukake, K. Fujiwara, A. Nakamura, K. Matsunaga, H. Yoshida
    Sci. Technol. Adv. Mater. Methods 1 (2021) 169-180.

  10. Cracking process at lineages in Czochralski-grown 36o-RY LiTaO3 ingots
    Y. Ohno, T. Kajigaya, K. Osako, T. Kochiya
    J. Crystal Growth 570 (2021) 126228/1-5.

  11. (Highlights of 2021, Spotlights 2021 in APEX)
    Insight into segregation sites for oxygen impurities at grain boundaries in silicon
    Y. Ohno, J. Ren, S. Tanaka, M. Kohyama, K. Inoue, Y. Shimizu, Y. Nagai, H. Yoshida
    Appl. Phys. Express 14 (2021) 041003/1-4.

  12. (Spotlights 2021 in APEX)
    Origin of recombination activity of non-coherent Σ3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots
    Y. Ohno, T. Tamaoka, H. Yoshida, Y. Shimizu, K. Kutsukake, Y. Nagai, N. Usami
    Appl. Phys. Express 14 (2021) 011002/1-4.

  13. Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications
    J. Liang, Y. Nakamura, T. Zhan, Y. Ohno, Y. Shimizu, K. Katayama, T. Watanabe, H. Yoshida, Y. Nagai, H. Wang, M. Kasu, N. Shigekawa
    Diam. Relat. Mater.111 (2021) 108207/1-7.

  14. Room temperature direct bonding of diamond and semiconductor layer in atmospheric air
    J. Liang, Y. Nakamura, Y. Ohno, Y. Shimizu, Y. Nagai, H. Wang, N. Shigekawa
    Funct. Diam.1 (2021) 110-116.

  15. Twinning in Czochralski-grown 36o-RY LiTaO3 single crystals
    Y. Ohno, Y. Kubouchi, H. Yoshida, T. Kochiya, T. Kajigaya
    Crystals 10 (2020) 1009/1-14.

  16. Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots
    Y. Ohno, K. Tajima, K. Kutsukake, N. Usami
    Appl. Phys. Express 13 (2020) 105505/1-4.

  17. Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces
    Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, S. Takeda, R. Miyagawa, Y. Shimizu, Y. Nagai
    Appl. Surf. Sci. 525 (2020) 146610/1-5.

  18. Characterization of nanoscopic Cu/diamond interfaces prepared by surface activated bonding: implications for thermal management
    J. Liang, Y. Ohno, Y. Yamashita, Y. Shimizu, S. Kanda, M. Kamiuchi, S. Kim, K. Koyama, Y. Nagai, M. Kasu, N. Shigekawa
    ACS Applied Nano Materials 3 (2020) 2455-2462.

  19. Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding
    Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, Y. Nagai, J. Liang, N. Shigekawa
    Jpn. J. Appl. Phys. 59 (2020) SBBB05/1-5.

  20. Fabrication of diamond/Cu direct bonding for power device applications
    S. Kanda, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, J. Liang
    Jpn. J. Appl. Phys. 59 (2020) SBBB03/1-5.

  21. Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family
    I. Yonenaga, M. Deura, Y. Tokumoto, K. Kutsukake, Y. Ohno
    J. Crystal Growth 500 (2018) 23-27.

  22. Interaction of sodium atoms with stacking faults in silicon with different Fermi levels
    Y. Ohno, H. Morito, K. Kutsukake, I. Yonenaga, T. Yokoi, A. Nakamura, K. Matsunaga
    Appl. Phys. Express 11 (2018) 061303/1-4.

  23. Characterization of femtosecond-laser-induced periodic structures on SiC substrates
    R. Miyagawa, Y. Ohno, M. Deura, I. Yonenaga, O. Eryu
    Jpn. J. Appl. Phys. 57 (2018) 025602/1-4.

  24. Mechanical properties of cubic-BN(111) bulk single crystal evaluated by nanoindentation
    M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taniguchi
    Phys. Stat. Sol. B 255 (2018) 1700473/1-4.

  25. Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
    Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
    Jpn. J. Appl. Phys. 57 (2018) 02BA01/1-3.

  26. Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations
    Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
    J. Microsc. 268 (2017) 230-238.

  27. Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon
    Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
    Appl. Phys. Lett. 110 (2017) 062105/1-5.

  28. Nanoindentation measurements of a highly oriented wurtzite-type boron nitride bulk crystal
    M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taniguchi
    Jpn. J. Appl. Phys. 56 (2017) 030301/1-4.

  29. Recombination activity of nickel, copper and oxygen atoms segregating at grain boundaries in mono-like silicon crystals
    Y. Ohno, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda
    Appl. Phys. Lett. 109 (2016) 142105/1-4.

  30. Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides
    I. Yonenaga, Y. Ohkubo, M. Deura, K. Kutsukake, Y. Tokumoto, Y. Ohno, A. Yoshikawa, and X. Q. Wang
    AIP Advances 5 (2015) 077131/1-13.

  31. Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si
    Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otsubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, Y. Nagai
    Phys. Rev. B 91 (2015) 235315/1-5.

  32. Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals
    Y. Ohno, K. Inoue, K. Fujiwara, M. Deura, K. Kutsukake, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai
    Appl. Phys. Lett. 106 (2015) 251603/1-4.

  33. Characterization of silicon ingots: mono-like vs. high-performance multicyrstalline
    K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
    Jpn. J. Appl. Phys. 54 (2015) 08KD10/1-5.

  34. Optical and electrical properties of dislocations in plastically deformed GaN
    I. Yonenaga, Y. Ohno, T. Yao, K. Edagawa
    J. Crystal Growth 403 (2014) 72-76.

  35. First principles calculations of solution energies of dopants around stacking faults in Si crystal
    Y. Yamamoto, K. Togase, Y. Ohno, I. Yonenaga, S. R. Nishitani
    Jpn. J. Appl. Phys. 53 (2014) 061302/1-4.

  36. Czochralski growth of heavily tin-doped Si crystals
    I. Yonenaga, T. Taishi, K. Inoue, R. Gotoh, K. Kutsukake, Y. Tokumoto, Y. Ohno
    J. Crystal Growth 395 (2014) 94-97.

  37. Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
    T. Taishi, Y. Ohno, I. Yonenaga
    J. Crystal Growth 393 (2014) 42-44.

  38. Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements
    K. Inoue, T. Taishi, Y. Tokumoto, K. Kutsukake, Y. Ohno, T. Ohsawa, R. Gotoh, I. Yonenaga
    J. Crystal Growth 393 (2014) 45-48.

  39. Slip systems in wurtzite ZnO activated by Vickers indentation on {2110} and {1010} surfaces at elevated temperatures
    Y. Ohno, H. Koizumi, Y. Tokumoto, K. Kutsukake, H. Taneichi, I. Yonenaga
    J. Crystal Growth 393 (2014) 119-122.

  40. Microstructure of striae in <0441>-oriented lithium niobate single crystal grown by Czochralski method
    Y. Ohno, T. Taishi, N. Bamba, I. Yonenaga
    J. Crystal Growth 393 (2014) 171-174.

  41. In-situ micro and near-field photo-excitation under transmission electron microscopy
    Y. Ohno, I. Yonenaga
    Appl. Surf. Sci. 302 (2014) 29-31.

  42. Mono-like silicon growth using functional grain boundaries to limit area of multicrystalline grains
    K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, I. Yonenaga
    IEEE J. Photovolt. 4 (2014) 84-87.

  43. How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy
    T. Walther, M. Hopkinson, N. Daneu, A. Recnik, Y. Ohno, K. Inoue, I. Yonenaga
    J. Mater. Sci. 49 (2014) 3898-3908.

  44. Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy
    Y. Ohno, K. Inoue, Y. Tokumoto, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda
    Appl. Phys. Lett. 103 (2013) 102102/1-4.

  45. Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams
    A. Uedono, I. Yonenaga, T. Watanabe, S. Kimura, N. Oshima, R. Suzuki, S. Ishibashi, Y. Ohno
    J. Appl. Phys. 114 (2013) 084506/1-6.

  46. Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies
    K. Inoue, T. Taishi, Y. Tokumoto, Y. Murao, K. Kutsukake, Y. Ohno, M. Suezawa, I. Yonenaga
    J. Appl. Phys. 113 (2013) 073501/1-5.

  47. (応用物理学会論文奨励賞)
    Control of grain boundary propagation in mono-like Si: utilization of functional grain boundaries
    K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, I. Yonenaga
    Appl. Phys. Express 6 (2013) 025505/1-3.

  48. Development of an apparatus for in-situ near-field photoexcitation in a transmission electron microscope
    Y. Ohno
    Appl. Phys. Express 5 (2012) 125204/1-3.

  49. Erratum: "Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation"
    Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
    J. Appl. Phys. 112 (2012) 129902/1.

  50. Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation
    Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
    J. Appl. Phys. 112 (2012) 093526/1-6.

  51. Formation and Evolution of Misoriented Grains in a-plane Oriented Gallium Nitride Layers
    Y. Tokumoto, H.-J. Lee, Y. Ohno, T. Yao, I. Yonenaga
    Mater. Trans. 53 (2012) 1881-1884.

  52. In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation
    Y. Ohno, I. Yonenaga, K. Miyao, K. Maeda, H. Tsuchida
    Appl. Phys. Lett. 101 (2012) 042102/1-3.

  53. 2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si
    J. Vanhellemont, H. Yasuda, Y. Tokumoto, Y. Ohno, M. Suezawa, I. Yonenaga
    phys. stat. sol. (a) 209 (2012) 1902-1907.

  54. Optical properties of edge dislocations on (1100) prismatic planes in wurtzite ZnO introduced at elevated temperatures
    Y. Ohno, Y. Tokumoto, I. Yonenaga, K. Fujii, T. Yao
    J. Appl. Phys. 111 (2012) 113514/1-6.

  55. Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth
    K. Kutsukake, H. Ise, Y. Tokumoto, Y. Ohno, I. Yonenaga
    J. Crystal Growth 352 (2012) 173-176.

  56. Interaction of dopant atoms with stacking faults in silicon
    Y. Ohno, Y. Tokumoto, H. Taneichi, I. Yonenaga, K. Togase, S.R. Nishitani
    Physica B 407 (2012) 3006-3008.

  57. Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperatures
    Y. Ohno, Y. Tokumoto, I. Yonenaga, K. Fujii, T. Yao, N. Yamamoto
    Physica B 407 (2012) 2886-2888.

  58. Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method
    I. Yonenaga, T. Taishi, H. Ise, Y. Murao, K. Inoue, T. Ohsawa, Y. Tokumoto, Y. Ohno, Y. Hashimoto
    Physica B 407 (2012) 2932-2934.

  59. Doping effects on the stability of stacking faults in silicon crystals
    Y. Ohno, Y. Tokumoto, I. Yonenaga
    Thin Solid Films 520 (2012) 3296-3299.

  60. Misoriented grains with preferential orientations in a-plane oriented GaN layers
    Y. Tokumoto, H.-J. Lee, Y. Ohno, T. Yao, I. Yonenaga
    J. Crystal Growth 334 (2011) 80-83.

  61. Impurity effects on the generation and velocity of dislocations in Ge
    Y. Murao, T. Taishi, Y. Tokumoto, Y. Ohno, I. Yonenaga
    J. Appl. Phys. 109 (2011) 113502/1-5.

  62. Optical properties of fresh dislocations in GaN
    I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto, H. Makino, T. Yao, Y. Kamimura, K. Edagawa
    J. Crystal Growth 318 (2011) 415-417.

  63. Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered Ge melt
    T. Taishi, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
    Microelectron. Eng. 88 (2011) 496-498.

  64. Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
    T. Taishi, H. Ise, Y. Murao, T. Osawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa, I. Yonenaga
    J. Crystal Growth 312 (2010) 2783-2787.

  65. Interaction of dopant atoms with stacking faults in silicon crystals
    Y. Ohno, T. Taishi, Y. Tokumoto, I. Yonenaga
    J. Appl. Phys. 108 (2010) 073514/1-4.

  66. Electrical breakdown of individual Si nanochains and silicide nanochains
    H. Kohno, T. Nogami, S. Takeda, Y. Ohno, I. Yonenaga, S. Ichikawa
    J. Nanosci. Nanotechnol. 10 (2010) 6655-6658.

  67. In situ transmission electron microscopy observation of the graphitization of silicon carbide nanowires induced by Joule heating
    H. Kohno, Y. Mori, S. Takeda, Y. Ohno, I. Yonenaga, S. Ichikawa
    Appl. Phys. Express 3 (2010) 055001/1-3.

  68. (invited)
    In-situ analysis of optoelectronic properties of twin boundaries in AlGaAs by polarized cathodoluminescence spectroscopy in a TEM
    Y. Ohno
    J. Electron Microsc. 59 (2010) S141-147.

  69. Structural elements of ultrashallow thermal donors formed in silicon crystals
    A. Hara, T. Awano, Y. Ohno, I. Yonenaga
    Jpn. J. Appl. Phys. 49 (2010) 050203/1-3.

  70. Cellular structures in Czochralski-grown SiGe bulk crystal
    I. Yonenaga, T. Taishi, Y. Ohno, Y. Tokumoto
    J. Crystal Growth 312 (2010) 1065-1068.

  71. Equilibrium segregation coefficient and solid solubility of B in Czchralski Ge crystal growth
    T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
    Thin Solid Films 518 (2010) 2409-2412.

  72. Reduction of grown-in dislocation density in Ge Czchralski-grown from B2O3-partially-covered melt
    T. Taishi, Y. Ohno, I. Yonenaga
    J. Crystal Growth 311 (2009) 4615-4618.

  73. Transformation of a SiC nanowire into a carbon nanotube
    H. Kohno, Y. Mori, S. Ichikawa, Y. Ohno, I. Yonenaga, S. Takeda
    Nanoscale 1 (2009) 344-346.
    (Among the top ten accessed Nanoscale articles in December 2009)

  74. Interaction of phosphorus with dislocations in heavily phosphorus doped silicon
    Y. Ohno, T. Shirakawa, T. Taishi, I. Yonenaga
    Appl. Phys. Lett. 95 (2009) 091915/1-3.

  75. In-situ analysis of optoelectronic properties of dislocations in ZnO by TEM observations
    Y. Ohno, T. Taishi, I. Yonenaga
    phys. stat. sol. (a) 206 (2009) 1904-1911.

  76. Converting an insulating silicon nanochain to a conducting carbon nanotube by electric breakdown
    T. Nogami, Y. Ohno, S. Ichikawa, H. Kohno
    Nanotechnology 20 (2009) 335602/1-5.
    [news item at nanotechweb.org]

  77. Recent knowledge on strength and dislocation mobility in wide bandgap semiconductors
    I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto
    Physica B 404 (2009) 4999-5001.

  78. Behavior of dislocations due to thermal shock and critical shear stress of Si in Czchralski crystal growth
    T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
    Physica B 404 (2009) 4612-4615.

  79. Segregation of boron in germanium crystal
    T. Taishi, Y. Murao, Y. Ohno, I. Yonenaga
    J. Crystal Growth 311 (2008) 59-61.

  80. Optical properties of dislocations in wurtzite ZnO single-crystals introduced at elevated temperatures
    Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T. Yao
    J. Appl. Phys. 104 (2008) 073515/1-6.

  81. High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors
    I. Yonenaga, H. Koizumi, Y. Ohno, T. Taishi
    J. Appl. Phys. 103 (2008) 093502/1-4.

  82. Light emission due to dislocations in wurtzite ZnO bulk single-crystals freshly introduced by plastic deformation
    Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T. Yao
    Appl. Phys. Lett. 92 (2008) 011922/1-3.

  83. Formation of multiple nanoscale twin boundaries that emit intense monochromatic light in indirect-gap AlGaAs epilayers
    Y. Ohno, K. Shoda, T. Taishi, I. Yonenaga, S. Takeda
    Appl. Surf. Sci. 254 (2008) 7633-7637.

  84. Intense monochromatic light emission from multiple nanoscale twin boundaries in indirect-gap AlGaAs epilayers
    Y. Ohno, N. Yamamoto, K. Shoda, S. Takeda
    Jpn. J. Appl. Phys. Part2. Express Letter 46 (2007) L830-L832.

  85. Fabrication of short-range ordered nanoholes on silicon surfaces by electron irradiation
    Y. Ohno, S. Takeda, T. Ichihashi, S. Iijima
    Jpn. J. Appl. Phys. Part1. 46 (2007) 434-439.

  86. Mechanism of the growth of ZnSe nanowires with Fe catalysts
    Y. Ohno, T. Shirahama, S. Takeda, A. Ishizumi, Y. Kanemitsu
    Solid State Commun. 141 (2007) 228-232.

  87. Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy
    Y. Ohno, T. Taishi, I. Yonenaga, S. Takeda
    Physica B 401-402 (2007) 230-233.

  88. Electronic properties of nanoscale multiple twin boundaries in AlGaAs
    Y. Ohno, N. Yamamoto, T. Taishi, I. Yonenaga, S. Takeda
    Physica B 401-402 (2007) 270-274.

  89. Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy
    Y. Ohno, R. Hirai, S. Ichikawa, T. Taishi, I. Yonenaga, S. Takeda
    Physica B 401-402 (2007) 650-653.

  90. Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman (VB) method
    T. Taishi, T. Hayashi, N. Bamba, Y. Ohno, I. Yonenaga, K. Hoshikawa
    Physica B 401-402 (2007) 437-440.

  91. Influence of seed/crystal interface shape on dislocation generation in Czochralski Si crystal growth
    T. Taishi, Y. Ohno, I. Yonenaga, K. Hoshikawa
    Physica B 401-402 (2007) 560-563.

  92. Influence of high-magnetic-field on dislocation-oxygen interaction in silicon
    I. Yonenaga, K. Takahashi, T. Taishi, Y. Ohno
    Physica B 401-402 (2007) 148-150.

  93. Diffusion and condensation of adatoms on inhomogeneous rough surfaces
    K. Torigoe, Y. Ohno, H. Kohno, T. Ichihashi, S. Takeda
    Surf. Sci. 601 (2007) 5103-5107.

  94. Excavation rate of silicon surface nanoholes
    Y. Ohno, S. Takeda, T. Ichihashi, S. Iijima
    J. Appl. Phys. 99 (2006) 126107/1-3.

  95. Microstructure of a CuPt-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy
    Y. Ohno
    Jpn. J. Appl. Phys. 45 (2006) 2357-2360.

  96. Electronic properties of antiphase boundaries in CuPt-ordered GaInP alloys
    Y. Ohno
    Physica B 376-377 (2006) 845-848.

  97. Arrangement of gold nanoparticles on rough surfaces introduced by electron irradiation with high flux
    K. Torigoe, Y. Ohno, T. Ichihashi, S. Takeda
    Physica B 376-377 (2006) 916-919.

  98. Photoinduced stress in a ZnSe/GaAs epilayer containing 90oα partial dislocations
    Y. Ohno
    Appl. Phys. Lett. 87 (2005) 181909/1-3.

  99. Polarized light emission from antiphase boundaries acting as slanting quantum wells in GaP/InP short-period superlattices
    Y. Ohno
    Phy. Rev. B. 72 (2005) 121307(R)/1-4.

  100. Fe-catalytic growth of ZnSe nanowires on a ZnSe(001) surface at low temperatures by molecular-beam epitaxy
    Y. Ohno, T. Shirahama, S. Takeda, A. Ishizumi, Y. Kanemitsu
    Appl. Phys. Lett. 87 (2005) 043105.
    Virtual Journal of Nanoscale Science & Technology, Volume 12, Issue 5

  101. Growth rate of silicon nanowires
    J. Kikkawa, Y. Ohno, S. Takeda
    Appl. Phys. Lett. 86 (2005) 123109.
    Virtual Journal of Nanoscale Science & Technology, Volume 11, Issue 12

  102. Growth of silicon nanowires on H-terminated Si {111} surface templates studied by transmission electron microscopy
    N. Ozaki, Y. Ohno, J. Kikkawa, S. Takeda
    J. Electron Microsc. 54 (2005) i25-i29.

  103. Formation of silicon/silicide/oxide nanochains and their properties studied by electron holography
    H. Kohno, H. Yoshida, Y. Ohno, S. Ichikawa, T. Akita, K. Tanaka, S. Takeda
    Thin Solid Films 464-465 (2004) 204-207.

  104. Origin of a pair of stacking faults in pseudomorphic ZnSe epitaxial layers on GaAs
    Y. Ohno, N.Adachi, S. Takeda
    Appl. Phys. Lett. 83 (2003) 54-56.

  105. Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation
    J. Yamasaki, S. Takeda, Y. Ohno, Y. Kimura
    Philos. Mag. 83 (2003) 151-163.

  106. Formation mechanism of nanocatalysts for the growth of silicon nanowires on a hydrogen-terminated Si {111} surface template
    S. Takeda, K. Ueda, N. Ozaki, Y. Ohno
    Appl. Phys. Lett. 82 (2003) 979-981.
    Virtual Journal of Nanoscale Science & Technology, Volume 7, Issue 7

  107. Analysis of polarization by means of polarized cathodoluminescence spectroscopy in a TEM
    Y. Ohno, S. Takeda
    J. Electron Microsc. 51 (2002) 281-290.

  108. Novel amorphization process in silicon induced by electron irradiation
    J. Yamasaki, Y. Ohno, H. Kohno, N. Ozaki, S. Takeda
    J. Non-crystall. Solids 299-302 (2002) 793-797.

  109. Fabrication of nanohole periodic multilayer structure on silicon surface toward photonic crystal
    Y. Ohno, N. Ozaki, S. Takeda
    Physica B 308-310 (2001) 1222-1225.

  110. Observation of silicon surface nanoholes by scanning tunneling microscopy
    N. Ozaki, Y. Ohno, M. Tanbara, D. Hamada, J. Yamasaki, S. Takeda
    Surf. Sci. 493 (2001) 547-554.

  111. Formation of microcracks in cubic boron nitride
    M. Aki, Y. Ohno, H. Kohno, S. Takeda
    Philos. Mag. A 80 (2000) 747-758.

  112. Vacancy-migration-mediated disordering in CuPt-ordered (Ga, In)P studied by in situ optical spectroscopy in a transmission electron microscope
    Y. Ohno, Y. Kawai, S. Takeda
    Phys. Rev. B 59 (1999) 2694-2699.

  113. Point defect reaction in AlGaInP STQW lasers enhanced by laser operation
    A. Ihara, Y. Ohno, S. Takeda, S. Nagao, R. Diffily, Y. Satoh, K. Shimoyama, N. Hosoi
    Physica B 273-274 (1999) 1050-1053.

  114. Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface
    N. Ozaki, Y. Ohno, S. Takeda
    Appl. Phys. Lett. 73 (1998) 3700-3702.

  115. Diffusion process of interstitial atoms in an electron-irradiated InP studied by transmission electron microscopy
    Y. Ohno, N. Saito, S. Takeda, M. Hirata
    Jpn. J. Appl. Phys. 36 (1997) 5628-5632.

  116. Clustering process of interstitial atoms in gallium phosphide studied by transmission electron microscopy
    Y. Ohno, S. Takeda, M. Hirata
    Phys. Rev. B 54 (1996) 4642-4649.

  117. Atomic structure of a defect colony in silicon introduced during neutron irradiation in the JOYO reactor
    Y. Ohno, M. Hirata, S. Takeda, R. Fujimoto,R. Oshima
    J. Electron Microsc. 45 (1996) 380-387.

  118. Study of electron-irradiation-induced defects in GaP by in-situ optical spectroscopy in a transmission electron microscope
    Y. Ohno, S. Takeda
    J. Electron Microsc. 45 (1996) 73-78.

  119. A new apparatus for in-situ photoluminescence spectroscopy in a transmission electron microscope
    Y. Ohno, S. Takeda
    Rev. Sci. Instruments 66 (1995) 4866-4869.

  120. Recovery process of photochromism of H2 and H3 centers in diamond
    Y. Mita, Y. Ohno, Y. Adachi, H. Kanehara, Y. Nisida, T. Nakashima
    Dia. Relat. Mater. 2 (1995) 768-772.

[Proceedings]

  1. Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature
    Y. Ohno, J. Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa
    Proc. 7th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2021) 12.

  2. Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device
    R. Kagawa, K. Kawamura, Y. Sakaida, S. Ouchi, H. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, J. Liang
    Proc. 7th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2021) 15.

  3. Fabrication of Ga2O3/Si direct bonding interface for high power device applications
    J. Liang, D. Takatsuki, Y. Shimizu, M. Higashiwaki, Y. Ohno, Y. Nagai, N. Shigekawa
    Proc. 7th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2021) 19.

  4. Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding
    K. Sawai, J. Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
    Proc. 7th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2021) 21.

  5. Nanostructural analysis of Al/β-Ga2O3 interface fabricated using surface activated bonding
    Z. Wan, J. Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
    Proc. 7th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2021) 27.

  6. Fabrication and Characterization of GaN/Diamond bonding interface
    A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang
    Proc. 7th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2021) 41.

  7. Fabrication of Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation
    H. Nagai, K. Kawamura, Y. Sakaida, H. Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, J. Liang
    Proc. 7th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2021) 48.

  8. (invited)
    Application of machine learning for high-performance multicrystalline materials
    N. Usamia, K. Kutsukake, T. Kojima, H. Kudo, T. Matsumoto, T. Yokoi, Y. Shimizu, Y. Ohno
    ECS Transactions 102 (2021) 11-16.

  9. Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature
    Y. Ohno, R. Miyagawa, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
    Proc. 6th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2019) 2.

  10. Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam
    Y. Ohno, H. Yoshida, M Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, N. Ebisawa, Y. Nagai, J. Liang, N. Shigekawa
    Proc. 6th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2019) 55.

  11. Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding
    Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, Y. Nagai
    Proc. 6th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2019) 56.

  12. Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature
    Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
    Proc. 5th Int. IEEE Workshop on Low Temperature Bonding for 3D Integration (2017) 4.

  13. Metal silicide epilayers self-organized at grain boundaries in silicon
    Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S.R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, Y. Nagai
    Microsc. 64 (2015) i45.

  14. InNの硬度とヤング率
    大久保泰, 出浦桃子, 徳本有紀, 沓掛健太朗, 大野裕, 米永一郎, IEICE Technical Report 114 (2014) 45-48.

  15. Formation of thermal double donors in Ge
    K. Inoue, T. Taishi, Y. Murao, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
    JPS Conf. Proc. 1 (2014) 012082/1-4.

  16. Nanoindentation hardness and elastic modulus of AlGaN alloys
    Y. Tokumoto, H. Taneichi, Y. Ohno, K. Kutsukake, H. Miyake, K. Hiramatsu, I. Yonenaga
    Proc. 2013 Conf. Lasers and Electro-Optics Pacific Rim (CLEOPR) (2013) TuPH-3/1-2.

  17. 3D evaluation of gettering ability of 3{111} grain boundaries
    Y. Ohno, K. Inoue, Y. Tokumoto, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda
    Proc. 7th Int. Workshop on Crystallinel Silicon Solar Cells (CSSC7) (2013) 134-137.

  18. Dislocation activities in Si under high-magnetic-field
    I. Yonenaga, Y. Ohno, Y. Tokumoto, K. Kutsukake
    Proc. 4th Int. Conf. on Fundamental Properties of Dislocations (Dislocations 2012) (2012) 29-32.

  19. Growth of dilute GeSn alloys
    Y Murao, T. Taishi, K. Kutsukake, Y. Tokumoto, Y. Ohno and I. Yonenaga
    Proc. 7th Int. Workshop on Modeling of Crystal Growth (IWMCG-7) (2012) 130-131.

  20. Czochralski growth of highly In doped Si -Effect of co-doping of C and Ge-
    K. Inoue, Y. Ohno, K. Kutsukake, Y. Tokumoto and I. Yonenaga
    Proc. 7th Int. Workshop on Modeling of Crystal Growth (IWMCG-7) (2012) 132-133.

  21. Growth of heavily indium doped Si crystals by co-doping of neutral impurity carbon or germanium
    K. Inoue, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
    Key Eng. Mater. 508 (2012) 220-223.

  22. Behaviour of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B2O3
    T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
    J. Phys. Conf. Ser. 281 (2011) 012011/1-6.

  23. Czochralski growth of Ge crystal from the melt partially covered by B2O3 liquid
    T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno
    Proc. Forum on the Science and Technology of Silicon Materials 2010 (2010) 28-33.

  24. Evaluation of oxygen impurities in Ge crystals Czochralski-grown from melts partially or fully covered by B2O3 liquid
    T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno
    Proc. Forum on the Science and Technology of Silicon Materials 2010 (2010) 426-432.

  25. Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth
    T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
    phys. stat. sol. (c) 8 (2009) 1886-1891.

  26. Growth and characterization of Mn-doped AgInS2 grown by a hot-press method
    Y. Akaki, Y. Shirahata, K. Yoshino, Y. Ohno, I. Yonenaga
    phys. stat. sol. (c) 6 (2009) 1043-1046.

  27. Atomistic structure of Si atoms agglomerated nearby a stacking fault in a commercial GaAs:Si
    Y. Ohno, T. Taishi, I. Yonenaga, S. Takeda
    phys. stat. sol. (c) 5 (2008) 2944-2946.

  28. Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures
    Y. Ohno, T. Shirahama , S. Takeda , A. Ishizumi, Y. Kanemitsu
    AIP Conf. Proc. 893 (2007) 115-116.

  29. Atomistic structure of spontaneously-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy and polarized cathodoluminescence spectroscopy
    Y. Ohno
    Springer Proc. Phys. 107 (2005) 483-486.

  30. Localized energy levels associated with dislocations in ZnSe revealed by polarized CL spectroscopy under light illumination
    Y. Ohno
    Springer Proc. Phys. 107 (2005) 507-510.

  31. Dynamics of Au Adatoms on Electron-Irradiated Rough Si Surfaces
    K. Torigoe, Y. Ohno, T. Ichihashi, S. Takeda
    Springer Proc. Phys. 107 (2005) 393-396

  32. Nucleation and growth processes of silicon nanowires
    S. Takeda, N. Ozaki, K. Ueda, H. Kohno, J. Kikkawa, Y. Ohno
    Mater. Res. Soc. Symp. Proc. 832 (2005) F9.1.1-11.

  33. Analysis of growth rate of silicon nanowires
    J. Kikkawa, Y. Ohno, S. Takeda
    Mater. Res. Soc. Symp. Proc. 832 (2005) F7.25.1-6.

  34. Formation and properties of silicon/silicide/oxide nanochains
    H. Kohno, Y. Ohno, S. Ichikawa, T. Akita, K. Tanaka, S. Takeda
    Mater. Res. Soc. Symp. Proc. 789 (2004) N11.18.1-6.

  35. Quantitative analysis of linear polarization by means of polarized cathodoluminescence spectroscopy in a TEM
    Y. Ohno, S. Takeda
    Inst. Phys. Conf. Ser. 180 (2004) 569-572.

  36. Formation mechanism of the pairs of stacking faults in pseudomorphic ZnSe epilayers on GaAs
    Y. Ohno, N.Adachi, S. Takeda
    Inst. Phys. Conf. Ser. 180 (2004) 187-190 .

  37. Formation of extended defects in polycrystalline SiGe by electron irradiation
    J. Kikkawa, J. Yamasaki, Y. Ohno, M. Kohyama, S. Takeda
    Solid State Phenomena 93 (2003) 361-366.

  38. Formation process of silicon surface nanoholes
    Y. Ohno, S. Takeda
    Inst. Phys. Conf. Ser. 169 (2001) 395-398.

  39. Control of the arrangement of nanoholes on silicon surface
    Y. Ohno, T. Ichihashi, S. Takeda
    Mater. Res. Soc. Symp. Proc. 638 (2001) F14.36.1-6.

  40. Formation and transition of defects in erbium/oxygen implanted silicon
    X. Duan, Y. Ohno, J. Michel, L. C. Kimerling
    Mater. Res. Soc. Symp. Proc. 637 (2001) E5171-E5176.

  41. Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GaInP2
    Y. Ohno, S. Takeda
    Mater. Res. Soc. Symp. Proc. 588 (2000) 105-110.

  42. Optical properties of Si nanowires on a Si{111} surface
    N. Ozaki, Y. Ohno, S. Takeda
    Mater. Res. Soc. Symp. Proc. 588 (2000) 99-104.

  43. Formation model for microstructures in a (Ga, In)P natural superlattice
    Y. Kuno, S. Takeda, M. Hirata, Y. Ohno, N. Hosoi, K. Shimoyama
    Inst. Phys. Conf. Ser. 164 (2000) 287-290.

  44. Optical properties of anti-phase boundaries and Frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope
    Y. Ohno, S. Takeda
    Inst. Phys. Conf. Ser. 164 (2000) 175-178.

  45. Formation of microcracks in an annealed cubic boron nitride
    M. Aki, Y. Ohno, S. Takeda
    Inst. Phys. Conf. Ser. 164 (2000) 93-96.

  46. VLS growth of Si nanowhiskers on a H-terminated Si {111} surface
    N. Ozaki, Y. Ohno, S. Takeda, M. Hirata
    Mater. Res. Soc. Symp. Proc. 536 (1999) 305-310.

  47. Electron-irradiation-induced disordering of Cu-Pt-ordered GaInP studied by TEM-mode optical spectroscopy
    Y. Ohno, Y. Kawai, S. Takeda
    Proc. 10th Conf. Semicond. and Insulating Mater. (SIMC-X), 173-176.

  48. Diffusion process of interstitial atoms in InP studied by transmission electron microscopy
    Y. Ohno, S. Takeda, M Hirata
    Matar. Res. Soc. Symp. Proc. 442 (1997) 435-440.

  49. Clustering process of point defects in GaP studied by transmission electron microscopy
    Y. Ohno, S. Takeda, M. Hirata
    Mater. Sci. Forum 196-201 (1995) 1279-1284.

  50. HRTEM study of the {111} planar defect
    Y. Ohno, S. Takeda, S. Horiuchi
    Inst. Phys. Conf. Ser. 134 (1993) 527-530.

[Transactions]

  1. 3次元アトムプローブと透過電子顕微鏡を用いた相関顕微鏡法による粒界・不純物の精密評価
    大野裕
    結晶成長学会誌 49 (2023) 7pages.

  2. 表面活性化接合によるX on diamond構造
    重川直輝, 梁剣波, 大野裕
    GSユアサ Technical Report 19 (2022) accepted for publication.

  3. 常温におけるダイヤモンドと異種材料の直接接合
    梁剣波, 大野裕, 重川直輝
    まてりあ 61 (2022) 334-339.

  4. Origin of resistance at Si/GaAs heterointerfaces for tandem solar cells fabricated by surface-activated bonding at room temperature
    Y. Ohno
    KINKEN Research Highlights 2018 (2018) 18.

  5. Mechanism of Oxygen Segregation at Grain Boundaries in Silicon
    Y. Ohno
    KINKEN Research Highlights 2017 (2017) 17.

  6. (invited)
    TEM-CL分光法による電子材料中のナノ構造の電子状態評価
    大野裕
    顕微鏡 50 (2015) 185-190.

  7. Cu Precipitation Conditions at Small Angle Tilt Boundaries in Si
    Y. Ohno
    KINKEN Research Highlights 2015 (2015) 21.

  8. 非極性GaN層中の微結晶粒の効率的な検出と今後の展望
    徳本有紀, 李賢宰、大野裕, 八百隆文, 米永一郎
    まてりあ 52 (2013) 273-277.

  9. 太陽電池用の擬似単結晶シリコンインゴットの育成
    沓掛健太朗, 宇佐美徳隆, 大野裕, 徳本有紀, 米永一郎
    技術総合誌OHM 2013年6月号 (2013) 8-9.

  10. Doping effects on the stacking fault energy in silicon
    Y. Ohno
    KINKEN Research Highlights 2011 (2011) 8-9.

  11. 半導体ナノ機能を直視する
    大野裕
    IMR news KINKEN 64 (2011).

  12. Formation of nanotubes of carbon by Joule heating of carbon-coated Si nanochain
    H. Kohno, Y. Ohno
    KINKEN Research Highlights 2010 (2010) 43.

  13. Optical properties of dislocations in wurtzite ZnO bulk single crystals introduced at elevated temperatures
    Y. Ohno
    KINKEN Research Highlights 2009 (2009) 5.

  14. Opto-TEM法によるZnO中の転位の光学応答解析
    大野裕, 太子敏則, 徳本有紀, 米永一郎
    まてりあ 48 (2009) 625.

  15. 透過電子顕微鏡内その場分光装置の開発とその応用
    大野裕
    大阪大学低温センターだより 143 (2008) 22-26.

  16. TEM内偏光CL分光法および劈開STM法によるGaP/InP短周期超格子の電子状態解析
    大野裕
    まてりあ 45 (2006) 901.

  17. ZnSe/GaAsエピタキシャル膜への積層欠陥の形成機構
    大野裕, 足立直人, 竹田精治
    材料開発のための顕微鏡法と応用写真集 (日本金属学会編), (2005) 193.

  18. 自己組織化作用によるシリコン表面ナノ穴形成
    竹田精治, 大野裕
    マテリアルステージ2002年2月号 (2002) 39-42.

  19. III-V族化合物半導体中における点欠陥の電子励起誘起反応
    大野裕
    大阪大学低温センターだより 105 (1999) 7-11.

  20. 透過電子顕微鏡内その場可視分光装置の開発とその応用
    竹田精治, 大野裕
    電子顕微鏡 32 (1997) 107-109.